Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BSH111,235

Name: BSH111,235
Brand: Nexperia USA Inc.
SKU: BSH111,235
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSH111,235

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSH111,235.pdf

Description:: MOSFET N-CH 55V 335MA TO236AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,764

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSH111 from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT23 package, rated for 55 V V_DS, 335 mA continuous drain current at 25 °C, and 2.3 Ω R_DS(on) at V_GS = 4.5 V. It serves as a low-voltage logic-level switch in battery-powered load control circuits.

For engineers reviewing the BSH111 datasheet, BSH111 pinout, BSH111 application, or BSH111 equivalent, this device is selected for sub-1 V_GS(th) operation, fast switching (t_on = 4 ns), and compact SOT23 footprint in space-constrained portable electronics.

Technical Context

This MOSFET uses TrenchMOS™ technology to achieve low gate charge (Q_g(tot) = 1.0 nC) and high transconductance (g_fs = 380 mS typ), enabling efficient switching with minimal drive requirements. Its 0.4–1.3 V gate-source threshold voltage supports direct interfacing with 1.8 V and 2.5 V logic families.

The device integrates a source-drain diode with 0.95 V forward drop at 300 mA and 30 ns reverse recovery time, suitable for synchronous rectification and flyback snubbing. Thermal resistance from junction to solder point is 150 K/W on metal-clad substrate, supporting moderate-power pulsed operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V maximum - supports 3.3 V to 24 V rail switching without avalanche stress
R_DS(on)	2.3 Ω max at V_GS = 4.5 V / I_D = 500 mA - enables <100 mW conduction loss at 300 mA
V_GS(th)	0.4–1.3 V - ensures turn-on with 1.8 V GPIO or low-voltage microcontroller outputs
t_on/t_off	4 ns / 11 ns - supports >10 MHz PWM in DC-DC converter control paths
Q_g(tot)	1.0 nC - reduces gate driver power demand and minimizes switching losses
C_iss	17 pF typ - limits capacitive loading on driving logic and improves EMI profile

Pinout & Package

SOT23 plastic surface-mount package (JEDEC TO-236AB); 3-pin, single-row outline with 1.9 mm × 1.3 mm footprint and 1.1 mm height. Designed for reflow soldering on standard PCBs with minimum thermal pad area.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	High-impedance control input; requires ≤10 V drive; sensitive to ESD (±10 V absolute max)
2	Source (S)	Reference node for gate drive; connects to ground or low-side return path; carries full load current
3	Drain (D)	Switched output terminal; connects to load or supply rail; hosts body diode cathode

Key Features

Feature	Design Value
TrenchMOS™ process	Enables lower R_DS(on) per die area vs planar MOSFETs, critical for SOT23 size constraint
Sub-1 V_GS(th)	Guarantees reliable turn-on from 1.8 V logic without level-shifting circuitry
Fast switching (t_on = 4 ns)	Reduces transition losses in high-frequency DC-DC converters and LED dimming drivers
Low Q_g (1.0 nC)	Permits use of low-current GPIO pins as direct gate drivers in ultra-low-power systems
Integrated source-drain diode	Supports bidirectional current handling in H-bridge half-bridges and reverse-polarity protection

Applications

Battery Protection Circuit

Logic-Level Translation Interface

Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion packs.

IC Role / Device Role / Timing Role: Low-side load switch controlled by battery management IC's enable signal.

Use Value: 0.4 V_GS(th) allows activation from BMS LDO output; 2.3 Ω R_DS(on) limits voltage drop to <0.8 V at 300 mA.

Use Scenario: Level-shifting between 1.8 V microcontroller I/O and 3.3 V peripheral enable lines.

IC Role / Device Role / Timing Role: Voltage-controlled pass element translating logic states without active buffering.

Use Value: Sub-threshold conduction ensures clean high/low transitions; 4 ns t_on preserves signal integrity up to 25 MHz.

Portable Load Switch

High-Speed Signal Routing

Use Scenario: Power gating of Bluetooth/Wi-Fi modules in wearables to extend standby time.

IC Role / Device Role / Timing Role: Controlled power rail disconnect switch activated by system PMIC.

Use Value: 335 mA rating covers typical RF module peak draw; SOT23 footprint saves board space in tight layouts.

Use Scenario: Selective routing of clock or data signals between two SoC domains operating at different voltages.

IC Role / Device Role / Timing Role: Bidirectional analog switch enabled by gate bias, leveraging intrinsic body diode symmetry.

Use Value: 30 ns t_rr and low C_iss minimize signal distortion; 150 °C T_j rating supports thermally dense SoC proximity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 1.9 Ω @ V_GS = 4.5 V; V_GS(th) = 0.5–1.2 V; same SOT23-3 package	Lower R_DS(on) improves efficiency in higher-current loads (>250 mA), but slightly higher gate charge (1.2 nC)	Preferred when conduction loss dominates over switching loss in battery runtime-critical designs
AO3400	R_DS(on) = 2.7 Ω @ V_GS = 4.5 V; V_GS(th) = 0.7–1.4 V; SOT23-3, higher thermal resistance (R_th(j-a) = 375 K/W)	Higher V_GS(th) risks marginal turn-on with 1.8 V logic; less suitable for ultra-low-voltage interfaces	Select only if cost sensitivity outweighs performance margin and thermal constraints

Compared with DMN2004LK-7 and AO3400, the BSH111 offers the lowest V_GS(th) and best balance of R_DS(on), Q_g, and thermal performance in SOT23, making it optimal for 1.8 V–2.5 V logic-driven switching where gate drive headroom is limited.

Availability

BSH111 is available at Aetrix Electronics and suitable for battery management, logic-level translation, and portable load switching requiring stable component supply across industrial and consumer production programs.

Supply support for BSH111 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' semiconductor division.

The BSH111 belongs to NXP's legacy TrenchMOS™ logic-level MOSFET product line, engineered specifically for low-voltage, high-efficiency switching in space-constrained portable electronics and battery-powered systems.

FAQ

Is the BSH111 suitable for 1.8 V GPIO direct drive?

Yes. With a guaranteed V_GS(th) as low as 0.4 V and typical turn-on at 1.0 V, the BSH111 fully enhances under 1.8 V drive, delivering 335 mA drain current with R_DS(on) ≤ 5.0 Ω at V_GS = 1.8 V and I_D = 75 mA. No level shifter is required.

What is the maximum continuous drain current at 100 °C ambient?

At T_sp = 100 °C and V_GS = 4.5 V, the BSH111 supports 212 mA continuous drain current, per Figure 2 in the datasheet. Derating is linear from 335 mA at 25 °C to zero at 150 °C junction temperature.

Can the BSH111 replace a BSS138 in existing designs?

Yes, with functional improvement: BSH111 offers lower R_DS(on) (2.3 Ω vs 3.5 Ω), faster switching (4 ns vs 10 ns t_on), and lower V_GS(th) (0.4–1.3 V vs 0.8–1.5 V), while maintaining identical SOT23-3 pinout and voltage ratings. Layout reuse is direct.

Does the BSH111 include ESD protection on the gate?

No. The BSH111 has no integrated gate protection diodes. Absolute maximum V_GS is ±10 V, and gate-source leakage is specified at 10–100 nA at ±8 V. External 10 kΩ series resistor and/or TVS clamp recommended for board-level ESD robustness.

BSH111,235 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 335mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 4Ohm @ 500mA, 4.5V

Vgs(th) (Max) @ Id:: 1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 1 nC @ 8 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 40 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 830mW (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BSH111,235 FAQ

1.How can I place an order for BSH111,235 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSH111,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSH111,235 reliable?

The price and inventory of BSH111,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSH111,235 is usually 5 days.

3.What payment methods are accepted for BSH111,235?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSH111,235 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSH111,235?

BSH111,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSH111,235 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSH111,235?

For technical support, including BSH111,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSH111,235 requirements.

6.How does Aetrix verify that BSH111,235 is sourced from the original manufacturer or authorized distributors?

All BSH111,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSH111,235 meets industry standards.

7.What is the process for return or replacement of BSH111,235?

All BSH111,235 units undergo pre-shipment inspection (PSI). If there is an issue with BSH111,235, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSH111,235 part is unused and in its original packaging.

Return procedure for BSH111,235:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…