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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BSH114,215

Name: BSH114,215
Brand: Nexperia USA Inc.
SKU: BSH114,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSH114,215

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSH114,215.pdf

Description:: MOSFET N-CH 100V 500MA TO236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSH114,215 from Nexperia is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT23 package, designed as a low-voltage general-purpose switch with 100 V drain-source breakdown voltage, 400–500 mΩ R_DS(on) at V_GS = 10 V/ID = 0.5 A, and 0.85 A continuous drain current - used in relay drivers and DC-DC converter high-side switching stages.

For engineers reviewing the BSH114,215 datasheet, BSH114,215 pinout, BSH114,215 application, or BSH114,215 equivalent, this page delivers verified electrical parameters, thermal behavior under solder-point-limited conditions, fast switching timing (td(on) = 6 ns, tr = 13 ns), and validated SOT23 terminal mapping for PCB layout and thermal design validation.

Technical Context

This device uses TrenchMOS™ technology to achieve low on-resistance and fast switching with minimal gate charge (Q_g(tot) = 4.6 nC). Its gate threshold voltage ranges from 2–4 V at 25 °C, enabling direct drive from 3.3 V and 5 V logic without level shifting.

The integrated body diode supports synchronous rectification in buck converters, with V_SD = 0.84–1.0 V at I_S = 0.85 A and t_rr = 24 ns, while R_th(j-sp) = 150 K/W ensures thermal stability when mounted on metal-clad substrates.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V maximum - supports operation in 48 V industrial bus and 24 V automotive auxiliary circuits without derating.
R_DS(on)	400–500 mΩ at V_GS = 10 V/ID = 0.5 A - enables <100 mW conduction loss at 0.5 A, critical for thermally constrained SOT23 layouts.
I_D (DC)	0.85 A at T_sp = 25 °C - defines maximum steady-state load current before thermal shutdown in standard PCB mounting.
Q_g(tot)	4.6 nC - determines gate driver strength requirement; compatible with low-power microcontroller GPIOs via 10 Ω series resistor.
t_r/t_f	13 ns rise / 5 ns fall - supports >10 MHz switching in low-power DC-DC topologies with minimal switching loss.
V_GS(th)	2–4 V at I_D = 1 mA - ensures reliable turn-on with 3.3 V CMOS logic and margin against noise-induced false triggering.
T_j(max)	150 °C - sets junction temperature limit for lifetime reliability; requires thermal design targeting ≤125 °C under full load.

Pinout & Package

SOT23 plastic surface-mounted package (TO-236AB), 3-lead, small-outline transistor format optimized for automated placement and reflow soldering on space-constrained PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control input; requires <100 nA leakage current handling and 4.6 nC total charge for full enhancement; sensitive to ESD.
2	Source (S)	Reference node for gate drive and current return path; tied to ground or low-side switch common in most applications.
3	Drain (D)	High-side load connection point; carries full switched current and must be routed with adequate copper area for thermal dissipation.

Key Features

Feature	Design Value
TrenchMOS™ technology	Enables 400 mΩ R_DS(on) in SOT23 - 3× lower on-resistance than planar MOSFETs of same footprint.
Low Q_g(tot)	4.6 nC total gate charge - reduces driver power consumption and allows use of low-current GPIOs without external buffers.
Fast switching	6 ns turn-on delay + 13 ns rise time - minimizes transition losses in PWM frequencies up to 2 MHz.
Integrated body diode	V_SD = 0.84 V at 0.85 A - supports freewheeling in inductive loads without external diode in low-power relay drivers.
SOT23 surface mount	Standardized 3-pin footprint - enables drop-in replacement in legacy designs and compatibility with high-volume pick-and-place equipment.

Applications

Relay Driver

DC-DC Converter

Use Scenario: Driving 12 V/24 V electromagnetic relays in PLC I/O modules and HVAC control panels.

IC Role / Device Role / Timing Role: High-side switch controlling relay coil current; operates in linear region during pull-in, then saturated during hold.

Use Value: Low R_DS(on) limits coil voltage drop to <0.4 V at 0.5 A, ensuring reliable relay actuation across temperature range.

Use Scenario: Synchronous rectifier in 5 V output buck converter for USB-C PD accessories.

IC Role / Device Role / Timing Role: Low-side synchronous switch replacing Schottky diode; commutated at 500 kHz with precise dead-time control.

Use Value: 0.84 V forward drop and 24 ns reverse recovery reduce conduction and switching losses by 35% vs. discrete diode solution.

General-Purpose Switch

Load Switch for IoT Sensor Node

Use Scenario: Power gating of non-critical peripherals (e.g., display backlight, SD card) in battery-powered handheld devices.

IC Role / Device Role / Timing Role: On/off control element placed between battery rail and load; driven by MCU GPIO with no external components.

Use Value: 2–4 V V_GS(th) ensures clean turn-on from 3.3 V MCU outputs; sub-1 µA I_DSS prevents standby current leakage.

Use Scenario: Controlled power enable for ultra-low-power environmental sensor subsystem (e.g., BME280 + BLE SoC).

IC Role / Device Role / Timing Role: Load switch isolating sensor supply rail; activated only during measurement cycles to minimize quiescent current.

Use Value: 100 V V_DS rating provides margin against inductive kickback from sensor bias networks; 150 °C T_j(max) supports extended outdoor operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 200 mΩ @ 4.5 V (vs. BSH114's 500 mΩ @ 10 V); higher gate charge (7.5 nC); SOT23-3L package identical.	Better for 3.3 V logic-driven loads requiring lower on-resistance; less suitable for 10 V gate drive due to over-spec'd gate oxide.	Select when driving from 3.3 V microcontrollers with tight R_DS(on) requirements; verify gate drive strength for 7.5 nC charge.
SI2302DS-T1-GE3	R_DS(on) = 80 mΩ @ 4.5 V; higher ID (2.6 A); same SOT23 footprint but different pinout (G-S-D vs. G-S-D confirmed identical).	Higher current capability suits larger solenoids or multi-sensor power domains; not recommended for thermally limited 0.85 A designs.	Choose for higher-current relay drivers where board space allows same footprint but thermal mass must be re-evaluated.

Compared with DMN2004LK-7 and SI2302DS-T1-GE3, BSH114,215 offers superior thermal resistance (R_th(j-sp) = 150 K/W) and tighter V_GS(th) distribution (2–4 V), making it more robust in ambient-temperature-variable industrial environments despite higher R_DS(on).

Availability

BSH114,215 is available at Aetrix Electronics and suitable for relay drivers, DC-DC converter synchronous rectifiers, and general-purpose load switching requiring stable component supply across automotive aftermarket, industrial control, and consumer electronics production.

Supply support for BSH114,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP's Standard Products division in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.

The BSH114,215 belongs to Nexperia's TrenchMOS™ low-voltage power MOSFET product line, engineered specifically for space-constrained, thermally sensitive applications demanding fast switching and robust gate drive compatibility with mainstream MCUs.

FAQ

Is BSH114,215 suitable for 3.3 V logic-level gate drive?

Yes - its gate threshold voltage is specified at 2–4 V (Tj = 25 °C), enabling reliable turn-on from 3.3 V CMOS outputs. However, R_DS(on) increases significantly below V_GS = 4.5 V; for optimal performance, use ≥4.5 V gate drive or confirm conduction loss at actual operating current and temperature.

What is the maximum continuous drain current at 100 °C ambient?

At T_sp = 100 °C, the maximum continuous drain current is 0.5 A per datasheet limiting values (Table 3). This reflects thermal derating due to R_th(j-sp) = 150 K/W; PCB copper area and airflow directly impact achievable current at elevated ambient temperatures.

Does BSH114,215 include integrated ESD protection?

No - the datasheet does not specify on-chip ESD protection structures. Gate oxide is rated for ±20 V V_GS, but real-world handling requires external TVS or RC filtering on gate traces, especially in automated assembly or field-replaceable modules exposed to human contact.

Can BSH114,215 replace BSS138 in existing designs?

Only with circuit review - BSS138 has lower V_DS (50 V), higher R_DS(on) (~3.5 Ω), and different V_GS(th) (0.8–1.5 V). BSH114,215 offers higher voltage rating and lower on-resistance but requires higher gate voltage for full enhancement; verify gate drive compliance and safe operating area margins before substitution.

BSH114,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 4.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 138 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta), 830mW (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BSH114,215 FAQ

1.How can I place an order for BSH114,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSH114,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSH114,215 reliable?

The price and inventory of BSH114,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSH114,215 is usually 5 days.

3.What payment methods are accepted for BSH114,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSH114,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSH114,215?

BSH114,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSH114,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSH114,215?

For technical support, including BSH114,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSH114,215 requirements.

6.How does Aetrix verify that BSH114,215 is sourced from the original manufacturer or authorized distributors?

All BSH114,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSH114,215 meets industry standards.

7.What is the process for return or replacement of BSH114,215?

All BSH114,215 units undergo pre-shipment inspection (PSI). If there is an issue with BSH114,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSH114,215 part is unused and in its original packaging.

Return procedure for BSH114,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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