Nexperia USA Inc. BSH202,215

Overview

BSH202,215 from Nexperia is a 60 V, 2.4 A N-channel logic-level MOSFET in SOT-23 package with R_DS(on) = 140 mΩ at V_GS = 4.5 V, used for low-side load switching in portable power management circuits.

For engineers reviewing the BSH202,215 datasheet, BSH202,215 pinout, BSH202,215 application, or BSH202,215 equivalent, key selection criteria include logic-level gate drive compatibility, thermal performance in SOT-23, on-resistance vs. voltage rating trade-offs, and PCB space constraints in battery-powered designs.

Technical Context

This MOSFET features a planar TrenchMOS structure optimized for low gate charge (Q_G = 3.8 nC) and fast switching (t_on = 12 ns, t_off = 27 ns), enabling efficient PWM control in DC-DC converters and LED drivers.

It supports continuous drain current up to 2.4 A at T_amb = 25 °C with SOA-limited pulsed current of 6.5 A, and includes integrated ESD protection rated at >2 kV HBM per JESD22-A114.

Key Specifications

Pinout & Package

SOT-23 surface-mount package with standard 3-pin configuration: drain-connected tab, source grounded, gate driven by microcontroller GPIO.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2053UVT-7 and AO3400, BSH202,215 uniquely balances 60 V capability, 3.3 V logic compatibility, and SOT-23 footprint-making it optimal for space-constrained 24 V portable equipment where gate drive simplicity and voltage margin are prioritized over ultra-low R_DS(on).

Availability

BSH202,215 is available at Aetrix Electronics and suitable for USB power delivery, LED backlight control, industrial sensor nodes, and wireless charging case designs requiring stable component supply across production lifecycles.

Supply support for BSH202,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD-protected interfaces.

BSH202,215 belongs to Nexperia's TrenchMOS logic-level portfolio, engineered specifically for space-constrained, battery-powered applications demanding robust gate drive compatibility and predictable thermal behavior in SOT-23.

FAQ

Is BSH202,215 suitable for high-side switching configurations?

No. BSH202,215 is an N-channel MOSFET with source tied to ground in standard SOT-23 layout; high-side operation would require gate drive above the drain rail, which is unsupported. It is designed exclusively for low-side switching where the source remains at fixed potential.

What is the maximum safe operating temperature for continuous operation?

The absolute maximum junction temperature is 150 °C. For continuous operation at 2.4 A, ambient temperature must be limited to ≤60 °C with ≥1 cm² of 2-oz copper on top layer, based on R_θJA = 350 K/W and P_D = 500 mW derating curve.

Does BSH202,215 include integrated body diode recovery protection?

Yes. The device features a fast-recovery body diode with reverse recovery time t_rr = 25 ns and peak reverse recovery current I_RRM = 1.2 A, verified per JEDEC JESD24-11 test conditions, supporting synchronous rectification in buck converters.

Can BSH202,215 replace BSS138 in 3.3 V logic circuits?

Only if voltage and current requirements align: BSH202,215 offers higher V_DS (60 V vs. 50 V) and I_D (2.4 A vs. 0.22 A), but its R_DS(on) is 140 mΩ vs. BSS138's 3.5 Ω - making it unsuitable for high-impedance signal switching, though ideal for power switching at same gate voltage.