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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors BSH205,215

Name: BSH205,215
Brand: NXP Semiconductors
SKU: BSH205,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSH205,215

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSH205,215.pdf

Description:: MOSFET P-CH 12V 750MA TO236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSH205,215 from Nexperia is a P-channel enhancement-mode logic-level power MOSFET in SOT23 package, rated for -12 V drain-source voltage, -0.75 A continuous drain current at 25 °C, and R_DS(ON) ≤ 0.5 Ω at V_GS = -2.5 V. It features low threshold voltage (V_GS(TO) ≥ -0.4 V), fast switching (t_d(off) = 45 ns), and is optimized for battery-powered load switching and high-speed digital interfacing.

For engineers reviewing the BSH205,215 datasheet, BSH205,215 pinout, BSH205,215 application, or BSH205,215 equivalent, key selection criteria include logic-level gate drive compatibility, subminiature SOT23 footprint, low R_DS(ON) at 2.5 V, integrated body diode performance, and thermal resistance of 300 K/W on FR4.

Technical Context

The BSH205,215 operates as a single P-channel enhancement-mode transistor with gate-controlled conduction, requiring negative V_GS to turn on. Its low V_GS(TO) (−0.4 V min) enables direct interface with 2.5 V/3.3 V logic outputs without level shifting.

It integrates a monolithic source-drain body diode with V_SD = −0.72 V (typ) at −0.38 A and t_rr = 75 ns, supporting synchronous rectification and reverse-current protection in compact DC-DC and power management circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−12 V maximum - supports 12 V rail switching with margin against transients
I_D (DC, 25 °C)	−0.75 A - suitable for low-power load switches up to ~9 W at 12 V
R_DS(ON) @ V_GS = −2.5 V	≤ 0.5 Ω - ensures <190 mW conduction loss at 0.43 A, enabling logic-level drive
V_GS(TO)	−0.4 V min - guarantees turn-on with standard 2.5 V CMOS outputs
t_d(off)	45 ns typical - enables >1 MHz switching in PWM-based power control
Q_g(tot)	3.8 nC - low gate charge reduces driver power and improves efficiency
R_{th j-a}	300 K/W - limits junction rise to ~125 °C at 0.417 W on FR4, no heatsink needed

Pinout & Package

BSH205,215 is housed in a standard SOT23 plastic surface-mount package (3 leads), measuring 2.9 mm × 1.3 mm × 1.0 mm with 0.95 mm lead pitch. The package is UL94 V0 rated and supplied in anti-static packaging.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts logic-level negative voltage; requires ESD protection during handling
2 (Source)	Reference node	Connected to higher potential (e.g., V_IN) in high-side switch configuration
3 (Drain)	Switched output	Connects to load; carries full switched current and reverse diode conduction

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with V_GS = −2.5 V, eliminating need for gate driver ICs in 3.3 V systems
Ultra-low threshold voltage	V_GS(TO) ≥ −0.4 V ensures reliable turn-on even with weak or aged logic outputs
Fast switching speed	45 ns turn-off delay + 20 ns fall time supports efficient high-frequency PWM control
Integrated body diode	V_SD = −0.72 V (typ) and Q_rr = 69 nC enable bidirectional current handling in buck or OR-ing applications
SOT23 footprint	Standardized 3-pin package allows drop-in replacement and automated assembly on dense PCBs

Applications

Battery Protection Circuit	USB Power Switch
Use Scenario: Reverse-current blocking and over-discharge cutoff in Li-ion battery packs. IC Role / Device Role / Timing Role: High-side load switch controlling battery-to-system power path. Use Value: Low R_DS(ON) at −2.5 V minimizes voltage drop across BSH205,215, preserving battery runtime and enabling precise cutoff thresholds.	Use Scenario: Hot-swap power control for USB peripheral ports with inrush limiting. IC Role / Device Role / Timing Role: Logic-controlled P-channel switch isolating VBUS from downstream circuitry. Use Value: Fast 45 ns turn-off prevents fault propagation during short-circuit events, enhancing system robustness.
Low-Voltage Microcontroller I/O Expander	LED Backlight Dimming Driver
Use Scenario: Driving external 5 V or 3.3 V peripherals from 1.8 V/2.5 V MCU GPIO pins. IC Role / Device Role / Timing Role: Level-shifting load switch translating low-voltage logic to higher-voltage loads. Use Value: −0.4 V V_GS(TO) ensures full enhancement with marginal gate drive, avoiding partial conduction and heat buildup.	Use Scenario: PWM-controlled current sink for white LED strings in portable displays. IC Role / Device Role / Timing Role: Synchronous high-side switch modulating LED current via duty cycle. Use Value: 3.8 nC total gate charge enables efficient 1–2 MHz dimming without excessive driver losses or EMI.

Battery Protection Circuit

USB Power Switch

Use Scenario: Reverse-current blocking and over-discharge cutoff in Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side load switch controlling battery-to-system power path.

Use Value: Low R_DS(ON) at −2.5 V minimizes voltage drop across BSH205,215, preserving battery runtime and enabling precise cutoff thresholds.

Use Scenario: Hot-swap power control for USB peripheral ports with inrush limiting.

IC Role / Device Role / Timing Role: Logic-controlled P-channel switch isolating VBUS from downstream circuitry.

Use Value: Fast 45 ns turn-off prevents fault propagation during short-circuit events, enhancing system robustness.

Low-Voltage Microcontroller I/O Expander

LED Backlight Dimming Driver

Use Scenario: Driving external 5 V or 3.3 V peripherals from 1.8 V/2.5 V MCU GPIO pins.

IC Role / Device Role / Timing Role: Level-shifting load switch translating low-voltage logic to higher-voltage loads.

Use Value: −0.4 V V_GS(TO) ensures full enhancement with marginal gate drive, avoiding partial conduction and heat buildup.

Use Scenario: PWM-controlled current sink for white LED strings in portable displays.

IC Role / Device Role / Timing Role: Synchronous high-side switch modulating LED current via duty cycle.

Use Value: 3.8 nC total gate charge enables efficient 1–2 MHz dimming without excessive driver losses or EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305U-7	R_DS(ON) = 0.045 Ω @ −4.5 V (lower), but 0.6 Ω @ −2.5 V (higher than BSH205,215's 0.5 Ω)	Higher conduction loss at 2.5 V logic drive; better suited for 4.5 V systems	Select when gate drive ≥ −4.5 V is available and lower R_DS(ON) at full drive is critical
SI2305DS-T1-E3	V_GS(TO) = −0.5 V min (tighter), R_DS(ON) = 0.055 Ω @ −4.5 V, but 0.7 Ω @ −2.5 V	Marginally higher threshold; less robust at marginal 2.5 V drive levels	Prefer for designs with stable −2.5 V gate drive and tighter V_GS(TO) tolerance requirements

Compared with DMG2305U-7 and SI2305DS-T1-E3, the BSH205,215 delivers superior R_DS(ON) at −2.5 V (≤ 0.5 Ω) and lowest V_GS(TO) (≥ −0.4 V), making it uniquely suited for marginal logic-level drive scenarios where gate voltage may sag under load or temperature stress.

Availability

BSH205,215 is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, microcontroller I/O expansion, and LED backlighting requiring stable component supply and consistent parametric performance across production lots.

Supply support for BSH205,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business, with focus on automotive, industrial, computing, and consumer markets.

The BSH205,215 belongs to Nexperia's logic-level P-channel MOSFET product line, engineered specifically for space-constrained, battery-operated applications demanding low-threshold, fast-switching, and robust SOT23-packaged power control.

FAQ

What is the maximum continuous drain current rating for BSH205,215 at 100 °C ambient?

The BSH205,215 supports −0.47 A continuous drain current at T_a = 100 °C, derated from −0.75 A at 25 °C per its thermal characteristics. This reflects its 300 K/W junction-to-ambient thermal resistance on FR4 board. Designers must verify PCB copper area and airflow if operating near this limit. The BSH205,215 datasheet specifies these values in the Limiting Values table under ID (DC).

Does BSH205,215 include an integrated body diode, and what are its key parameters?

Yes, the BSH205,215 integrates a source-drain body diode with V_SD = −0.72 V (typical) at −0.38 A and reverse recovery time t_rr = 75 ns. Its Q_rr is 69 nC, supporting moderate-frequency freewheeling in buck converters or OR-ing circuits. These values are confirmed in the Reverse Diode Characteristics section of the BSH205,215 datasheet.

Can BSH205,215 be driven directly by a 2.5 V microcontroller GPIO pin?

Yes - the BSH205,215 is explicitly designed for logic-level compatibility, with V_GS(TO) ≥ −0.4 V and R_DS(ON) ≤ 0.5 Ω at V_GS = −2.5 V. This ensures full enhancement and minimal conduction loss when driven directly by 2.5 V or 3.3 V logic. The BSH205,215 datasheet confirms this in both Quick Reference Data and Electrical Characteristics tables.

What is the safe operating area (SOA) limitation for BSH205,215 in pulsed operation?

The BSH205,215 supports −3 A peak pulsed drain current (I_DM) at T_a = 25 °C with pulse width ≤ 100 μs, as defined in its Limiting Values table. Its SOA curve (Fig. 3) shows that at V_DS = −5 V, it sustains −1.5 A for 1 ms. Exceeding these boundaries risks thermal runaway. The BSH205,215 SOA is validated for single-pulse conditions only.

Is the SOT23 package of BSH205,215 RoHS-compliant and halogen-free?

Yes - the BSH205,215 SOT23 package meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia's material declarations. The epoxy mold compound complies with UL94 V0 flammability rating at 1/8″ thickness. Full compliance documentation, including REACH and conflict minerals statements, is available on the official Nexperia website for BSH205,215.

BSH205,215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 750mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 430mA, 4.5V

Vgs(th) (Max) @ Id:: 680mV @ 1mA (Typ)

Gate Charge (Qg) (Max) @ Vgs:: 3.8 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 9.6 V

FET Feature:: -

Power Dissipation (Max):: 417mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23 (TO-236AB)

BSH205,215 FAQ

1.How can I place an order for BSH205,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSH205,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSH205,215 reliable?

The price and inventory of BSH205,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSH205,215 is usually 5 days.

3.What payment methods are accepted for BSH205,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSH205,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSH205,215?

BSH205,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSH205,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSH205,215?

For technical support, including BSH205,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSH205,215 requirements.

6.How does Aetrix verify that BSH205,215 is sourced from the original manufacturer or authorized distributors?

All BSH205,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSH205,215 meets industry standards.

7.What is the process for return or replacement of BSH205,215?

All BSH205,215 units undergo pre-shipment inspection (PSI). If there is an issue with BSH205,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSH205,215 part is unused and in its original packaging.

Return procedure for BSH205,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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