NXP Semiconductors BSH207,135

Overview

BSH207,135 from Nexperia (formerly Philips Semiconductors) is a P-channel enhancement-mode logic-level MOSFET in SOT457 package, rated for -12 V drain-source voltage, -1.52 A DC drain current at 25 °C, and R_DS(ON) ≤ 150 mΩ at V_GS = -2.5 V. It serves as a low-threshold, fast-switching load switch in battery-powered portable electronics and high-speed digital interface circuits.

For engineers reviewing the BSH207,135 datasheet, BSH207,135 pinout, BSH207,135 application, or BSH207,135 equivalent, key selection criteria include its sub-1 V gate threshold, 8.8 nC total gate charge, integrated body diode with 75 ns reverse recovery time, and thermal resistance of 300 K/W on FR4 - all critical for compact, thermally constrained DC-DC and power management designs.

Technical Context

The BSH207,135 operates as a single P-channel silicon MOSFET with enhancement-mode behavior requiring negative gate-source bias to conduct. Its low V_GS(TO) (−0.4 V min) enables direct drive from 1.8 V/2.5 V logic outputs without level shifting.

It features an integrated source-drain body diode with −0.62 V forward voltage at −0.62 A, and exhibits 500 pF input capacitance and 62 pF feedback capacitance at V_DS = −9.6 V, supporting predictable switching dynamics in synchronous buck or load-switch topologies.

Key Specifications

Pinout & Package

SOT457 is a 6-pin, surface-mount plastic package with exposed drain pads (pins 1,2,5,6) for enhanced thermal performance and compact footprint (3.1 mm × 2.7 mm × 1.1 mm). The package supports reflow soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Compared with DMG2302UK-7 and SI2305-CDS, the BSH207,135 uniquely balances ultra-low-threshold operation, multi-pin thermal routing, and moderate gate charge - making it optimal for 1.8 V–2.5 V-driven, thermally constrained load switching where reliability at full rated current is essential.

Availability

BSH207,135 is available at Aetrix Electronics and suitable for battery management systems, USB-C power switches, and portable display backlighting requiring stable component supply and long-term industrial availability.

Supply support for BSH207,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with leadership in efficiency, miniaturization, and thermal performance.

The BSH207,135 belongs to Nexperia's logic-level P-channel MOSFET portfolio, engineered specifically for energy-efficient power switching in space- and voltage-constrained portable electronics.

FAQ

What is the maximum continuous drain current for BSH207,135 at 100 °C ambient temperature?

The BSH207,135 supports −0.96 A continuous drain current at T_a = 100 °C, derated from −1.52 A at 25 °C per its thermal resistance profile. This value is confirmed in the Limiting Values table and reflects safe operation on standard FR4 PCBs without forced airflow. Designers must verify junction temperature using R_{th j-a} = 300 K/W and actual power dissipation to ensure T_j remains below 150 °C in the BSH207,135.

Does BSH207,135 have an integrated body diode, and what are its key parameters?

Yes, the BSH207,135 includes a built-in source-drain body diode characterized with V_SD = −0.62 V at −0.62 A, reverse recovery time t_rr = 75 ns, and Q_rr = 69 nC. These values are measured under specified conditions (IF = −0.5 A, −dIF/dt = 100 A/µs, VR = −9.6 V) and are critical for freewheeling path design in buck converters or H-bridge motor drivers using the BSH207,135.

Can BSH207,135 be driven directly by a 1.8 V microcontroller GPIO?

Yes - the BSH207,135 has a guaranteed gate threshold voltage V_GS(TO) ≥ −0.4 V, allowing full enhancement with −1.8 V gate drive. At V_GS = −1.8 V and I_D = −0.5 A, R_DS(ON) is ≤ 180 mΩ, confirming usable conduction. This makes the BSH207,135 suitable for direct interface with 1.8 V logic without external level shifting, a key advantage over higher-threshold alternatives.

What is the thermal resistance junction-to-ambient for BSH207,135 on a standard FR4 board?

The BSH207,135 has a maximum thermal resistance R_{th j-a} of 300 K/W when mounted on a minimum-footprint FR4 PCB, as defined in the Thermal Resistances section. This value assumes standard JEDEC test conditions and is used to calculate junction temperature rise: ΔT_j = P_diss × 300 K/W. For reliable long-term operation, the BSH207,135 must be applied within this thermal limit to avoid exceeding T_j = 150 °C.

Is the SOT457 package of BSH207,135 lead-free and RoHS compliant?

Yes - the BSH207,135 is manufactured in a lead-free, RoHS-compliant SOT457 package per Nexperia's product specifications and EU Directive 2011/65/EU. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and is qualified for reflow soldering up to 260 °C peak temperature. Full compliance documentation for the BSH207,135 is available through Nexperia's official product portal.