Infineon Technologies BSL214NH6327XTSA1
- Part No.:
- BSL214NH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
BSL214NH6327XTSA1.pdf
- Description:
- MOSFET 2N-CH 20V 1.5A TSOP6-6
- Quantity:
- Payment:

- Shipping:

Inventory:5,338
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Product details
Overview
BSL214NH6327XTSA1 from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in TSOP6 package, rated for 20 V VDS, 1.5 A continuous drain current, and 250 mΩ RDS(on) at VGS = 2.5 V. It features super logic-level gate drive, avalanche rating, AEC-Q101 qualification, and is used in automotive body electronics and low-voltage power switches.
For engineers reviewing the BSL214NH6327XTSA1 datasheet, BSL214NH6327XTSA1 pinout, BSL214NH6327XTSA1 application, or BSL214NH6327XTSA1 equivalent, key selection criteria include 2.5 V logic compatibility, dual-channel integration in compact TSOP6, RDS(on) stability over temperature, and automotive-grade reliability under pulsed load and avalanche stress.
Technical Context
This dual N-channel MOSFET operates in enhancement mode with gate threshold voltage (VGS(th)) tightly specified at 0.7–1.2 V and exhibits low input capacitance (Ciss = 107–143 pF) and fast switching (tr = 7.6 ns, tf = 1.4 ns). Its integrated body diode supports synchronous rectification with VSD = 0.8–1.1 V at 1.5 A.
The device is optimized for low-voltage DC-DC conversion and load switching where logic-level drive from microcontrollers or ASICs is required. Thermal resistance RthJA is 250 K/W on minimal FR4 footprint, and it sustains 3.7 mJ single-pulse avalanche energy at ID = 1.5 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 20 V - Supports 12 V automotive and 5–12 V industrial rail systems with margin |
| RDS(on) @ 2.5 V | 250 mΩ max - Enables direct drive from 2.5 V GPIO without level-shifting |
| ID Continuous | 1.5 A @ TA = 25 °C - Sufficient for LED drivers, fan control, and sensor power gating |
| EAS | 3.7 mJ - Withstands inductive kickback in relay/actuator drive without external snubber |
| Qg Total | 0.8 nC - Low gate charge enables efficient 1–2 MHz switching in compact converters |
| VGS(th) | 0.7–1.2 V - Ensures robust turn-on across temperature and process variation |
| Ciss | 107–143 pF - Minimizes Miller effect and improves noise immunity in high-dv/dt environments |
Pinout & Package
Package: PG-TSOP6 (lead-free, halogen-free, RoHS-compliant), 6-pin surface-mount with exposed drain pad for thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source of Channel 1 | Low-side return path for first MOSFET; tied to common ground in half-bridge configurations |
| 2 | Gate of Channel 1 | Logic-level control input; requires no external driver for 2.5 V–5 V MCU outputs |
| 3 | Drain of Channel 1 | Power output node; electrically connected to exposed pad for thermal conduction |
| 4 | Drain of Channel 2 | Independent high-current output; shares thermal pad but isolated electrically from Channel 1 |
| 5 | Gate of Channel 2 | Second independent logic-level input; enables dual synchronous switching or redundancy |
| 6 | Source of Channel 2 | Second return path; allows floating or split-ground topologies in dual-load control |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched MOSFETs in one TSOP6 package reduce PCB area by >40% vs discrete solutions |
| Super logic-level gate | Guaranteed turn-on at VGS = 2.5 V supports direct interface with low-voltage MCUs and FPGAs |
| Avalanche-rated operation | 3.7 mJ single-pulse EAS eliminates need for external clamping in inductive load switching |
| AEC-Q101 qualified | Validated for automotive body electronics including door modules, lighting, and HVAC actuators |
| Halogen-free & lead-free | Complies with IEC61249-2-21 and RoHS; suitable for consumer, industrial, and automotive assembly |
Applications
| Automotive Door Module | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Controlling window lift motors, mirror actuators, and interior lighting in modern vehicle door ECUs. IC Role / Device Role / Timing Role: Dual-channel load switch providing independent 12 V power routing with logic-level enable from CAN/LIN gateway MCU. Use Value: Eliminates need for two separate MOSFETs and reduces layout complexity while maintaining AEC-Q101 compliance and thermal margin. | Use Scenario: Enabling/disabling VBUS paths in USB-C port controllers handling up to 3 A per channel. IC Role / Device Role / Timing Role: Dual N-channel switch managing source/sink direction and overcurrent isolation in PD 3.0 compliant designs. Use Value: 250 mΩ RDS(on) at 2.5 V ensures <125 mW conduction loss at 3 A, supporting thermally constrained portable form factors. |
| Industrial Sensor Node Power Gating | Low-Voltage Fan Controller |
Use Scenario: Powering MEMS sensors and ADCs only during measurement cycles in battery-operated IIoT nodes. IC Role / Device Role / Timing Role: Precision low-leakage switch (IDSS ≤ 1 mA at 25 °C) enabling µA-level sleep current preservation. Use Value: Gate threshold tightness (0.7–1.2 V) ensures consistent turn-off across temperature, preventing phantom wake-up. | Use Scenario: Driving 5 V/12 V brushless DC fans in network equipment and medical enclosures requiring quiet, reliable speed control. IC Role / Device Role / Timing Role: PWM-controlled high-side or low-side switch with fast 1.4 ns fall time minimizing switching losses at 25–50 kHz. Use Value: Integrated body diode with trr = 8.4 ns supports efficient freewheeling, reducing EMI and heat generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BSS138BKS,115 (Nexperia) | Single-channel, 50 V VDS, 380 mΩ RDS(on) @ 4.5 V; no AEC-Q101 rating | Lacks dual integration and automotive qualification; suited for non-automotive signal switching | Select only if dual-channel integration is unnecessary and higher VDS margin is prioritized over conduction loss |
| DMN2041LSD-13 (Diodes Inc.) | Dual N-channel, 20 V, 160 mΩ @ 4.5 V; not rated for 2.5 V drive; no avalanche spec | Requires ≥3.3 V gate drive; unsuitable for 2.5 V logic systems; lacks EAS validation | Prefer when system uses 3.3 V+ control and avalanche robustness is not required |
Compared with BSS138BKS and DMN2041LSD-13, BSL214NH6327XTSA1 uniquely combines dual-channel integration, guaranteed 2.5 V turn-on, AEC-Q101 qualification, and validated avalanche capability-making it the only option for space-constrained, automotive-grade, low-voltage logic-driven switching.
Availability
BSL214NH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery systems, and industrial sensor node power management requiring stable component supply and long-term lifecycle support.
Supply support for BSL214NH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification aligned to ISO/TS 16949.
The OptiMOS™2 Small-Signal-Transistor product line targets logic-compatible, high-reliability power switching in automotive and industrial applications where compact size, low gate drive voltage, and ruggedness are critical.
FAQ
Is BSL214NH6327XTSA1 suitable for hot-swap applications?
Yes. Its 20 V VDS rating, 3.7 mJ avalanche energy, and controlled dv/dt (6 kV/µs) make it suitable for controlled inrush limiting in 12 V hot-swap circuits. The dual-channel configuration allows independent sequencing of power rails, and its low RDS(on) minimizes insertion loss during steady-state operation.
What is the maximum operating junction temperature?
The absolute maximum junction temperature is 150 °C, with derated continuous drain current (ID) down to 1.2 A at TA = 70 °C. Thermal resistance RthJA is 250 K/W on minimal FR4 footprint, so sustained 1.5 A operation requires adequate copper area or forced airflow to maintain Tj ≤ 150 °C.
Does the body diode support synchronous rectification?
Yes. The integrated body diode has VSD = 0.8–1.1 V at 1.5 A and trr = 8.4 ns, enabling use in synchronous buck or flyback topologies up to ~500 kHz. Its Qrr of 1.7 nC limits reverse recovery loss, and matching between channels ensures balanced current sharing in dual-phase designs.
Can BSL214NH6327XTSA1 be used in a high-side configuration?
No. As a standard N-channel MOSFET, it requires gate voltage above source potential for conduction. In high-side applications, a dedicated gate driver with bootstrap or isolated supply is mandatory. Its design intent is low-side or half-bridge low-side switching; for true high-side control, a P-channel or integrated high-side switch is recommended.
BSL214NH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 1.5A
- Rds On (Max) @ Id, Vgs:
- 140mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 143pF @ 10V
- Power - Max:
- 500mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSOP6-6
BSL214NH6327XTSA1 FAQ
1.How can I place an order for BSL214NH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSL214NH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSL214NH6327XTSA1 reliable?
The price and inventory of BSL214NH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSL214NH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BSL214NH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSL214NH6327XTSA1 transactions.
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4.How is shipping managed for BSL214NH6327XTSA1?
BSL214NH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSL214NH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSL214NH6327XTSA1?
For technical support, including BSL214NH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSL214NH6327XTSA1 requirements.
6.How does Aetrix verify that BSL214NH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BSL214NH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSL214NH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BSL214NH6327XTSA1?
All BSL214NH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSL214NH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSL214NH6327XTSA1 part is unused and in its original packaging.
Return procedure for BSL214NH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSL214NH6327XTSA1 Tags

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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

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2N7002DW-7-F
Diodes Incorporated

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SSM6L56FE,LM
Toshiba Semiconductor and Storage

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SSM6N37FU,LF
Toshiba Semiconductor and Storage

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2N7002DWH6327XTSA1
Infineon Technologies

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2N7002BKS,115
Nexperia USA Inc.

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DMG1016UDW-7
Diodes Incorporated

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UM6K33NTN
Rohm Semiconductor

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DMG6602SVT-7
Diodes Incorporated

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EM6K34T2CR
Rohm Semiconductor

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UM6K34NTCN
Rohm Semiconductor

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DMG6601LVT-7
Diodes Incorporated
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