Infineon Technologies BSL306NH6327XTSA1

Overview

BSL306NH6327XTSA1 from Infineon Technologies is a dual N-channel logic-level MOSFET in TSOP-6 package, rated for 30 V V_DS, 2.3 A continuous drain current at 25 °C, and 93 mΩ R_DS(on) at V_GS = 4.5 V. It features avalanche rating, AEC-Q101 qualification, and integrated body diode with 0.83 V forward voltage at 2.3 A - used in automotive load switching and DC-DC converter synchronous rectification.

For engineers reviewing the BSL306NH6327XTSA1 datasheet, BSL306NH6327XTSA1 pinout, BSL306NH6327XTSA1 application, or BSL306NH6327XTSA1 equivalent, key selection criteria include logic-level gate drive compatibility (4.5 V), dual-channel thermal coupling in compact TSOP-6, R_DS(on) temperature stability up to 150 °C, and AEC-Q101 compliance for under-hood automotive use.

Technical Context

This dual N-channel MOSFET integrates two matched enhancement-mode transistors sharing common source terminals in a single TSOP-6 package. Each channel supports 30 V breakdown voltage, 2.3 A continuous current, and operates down to 1.2 V gate threshold - enabling direct interface with 3.3 V/5 V microcontrollers without level-shifting.

Its dynamic parameters include 207 pF input capacitance, 12 pF reverse transfer capacitance, and 1.6 nC total gate charge, supporting fast switching in high-frequency DC-DC converters. The integrated body diode exhibits 14.4 ns reverse recovery time and 2.9 nC Q_rr, minimizing commutation losses in synchronous buck topologies.

Key Specifications

Pinout & Package

Package: PG-TSOP-6 (lead-free, halogen-free, RoHS-compliant), 1.6 mm × 2.9 mm footprint, 1 mm height, thermal resistance R_thJA = 250 K/W on minimal FR4 PCB.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Compared with BSS138DW-7-F and DMN3028LSD-13, BSL306NH6327XTSA1 uniquely balances 30 V rating, 93 mΩ @ 4.5 V, AEC-Q101 qualification, and TSOP-6 miniaturization - making it optimal for thermally constrained automotive and industrial dual-switch applications requiring robustness and logic-level drive.

Availability

BSL306NH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC synchronous rectifiers, USB-C power delivery load switches, and brushless DC motor gate driver stages requiring stable component supply across production lifecycles.

Supply support for BSL306NH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The OptiMOS™2 product line delivers high-efficiency, logic-level, AEC-Q101-qualified MOSFETs optimized for automotive and industrial switching applications where thermal density, gate drive simplicity, and transient robustness are critical.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The BSL306NH6327XTSA1 has a maximum junction temperature of 150 °C. At T_A = 70 °C, its continuous drain current drops to 1.8 A due to thermal derating - verified by the I_D vs. T_A curve on page 4 of the datasheet. This reflects real-world PCB thermal performance with minimal copper area (40 mm² FR4, 1 mm traces).

Is the device truly dual-channel with independent gates and shared source?

Yes - Pins 1 and 4 are internally bonded to the same source node, while Pins 2 and 5 are separate gate inputs, and Pins 3 and 6 are independent drain terminals. This configuration supports either two independent low-side switches or a half-bridge leg with external high-side driver.

Does the avalanche rating apply to both channels simultaneously?

Yes - the 10.8 mJ single-pulse avalanche energy (E_AS) is specified per channel under I_D = 2.3 A and R_GS = 25 Ω test conditions. Both channels may be subjected to simultaneous avalanche events if externally biased within safe operating area limits shown on page 4.

How does the body diode's reverse recovery performance compare to discrete Schottky diodes?

With t_rr = 14.4 ns and Q_rr = 2.9 nC at 2.3 A, the integrated body diode outperforms typical 40 V Schottky diodes (t_rr > 30 ns, Q_rr > 5 nC) in fast-switching buck converters - reducing switching loss and EMI, though forward voltage (0.83 V) remains higher than Schottky (0.3–0.5 V).