Infineon Technologies BSL308CH6327XTSA1

Overview

BSL308CH6327XTSA1 from Infineon Technologies is a dual-channel complementary small-signal MOSFET pair (P+ N-channel) in a PG-TSOP-6 package, rated for ±30 V V_DS, logic-level gate drive (4.5 V), and AEC-Q101 qualified for automotive use. It delivers R_DS(on) of 80 mΩ (P) and 57 mΩ (N) at V_GS = ±10 V, with avalanche energy up to 10.8 mJ, enabling robust half-bridge switching in motor control and DC-DC converters.

For engineers reviewing the BSL308CH6327XTSA1 datasheet, BSL308CH6327XTSA1 pinout, BSL308CH6327XTSA1 application, or BSL308CH6327XTSA1 equivalent, key selection criteria include complementary channel matching, logic-level gate compatibility, thermal resistance (250 K/W on minimal footprint), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This dual MOSFET integrates matched P- and N-channel OptiMOS™ P3 and OptiMOS™ 2 silicon in one die-cast leadframe package, supporting synchronous rectification and push-pull topologies without external level-shifting. Its gate threshold voltages (–1.5 V typ. for P, +1.6 V typ. for N) ensure reliable turn-on at 4.5 V logic rails.

The device features low gate charge (Q_g = 5.0 nC for P, 1.5 nC for N) and fast switching (t_r = 7.7 ns / t_f = 2.8 ns for P; t_r = 2.3 ns / t_f = 1.4 ns for N), optimized for high-frequency operation up to 1 MHz, with integrated body diodes exhibiting t_rr ≤ 14.4 ns and Q_rr ≤ 2.9 nC (N-channel).

Key Specifications

Pinout & Package

BSL308CH6327XTSA1 uses the PG-TSOP-6 surface-mount package (3.05 × 1.5 mm, 0.95 mm height), with exposed drain pads for both channels thermally connected to Pin 4 (P-Drain) and Pin 5 (N-Drain). The package supports reflow soldering at 260 °C peak per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMC2038LSD-13 and SI6926ADQ-T1-GE3, BSL308CH6327XTSA1 provides superior thermal performance (250 K/W vs. ≥300 K/W), automotive qualification, and tighter R_DS(on) matching-critical for balanced half-bridge efficiency and EMI control in safety-relevant systems.

Availability

BSL308CH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C PD power routing, and industrial PLC digital output modules requiring stable component supply and long-term lifecycle support.

Supply support for BSL308CH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication facilities.

The OptiMOS™ product line targets high-efficiency, high-reliability power switching in automotive and industrial applications, emphasizing low R_DS(on), fast switching, and robust ruggedness testing.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSL308CH6327XTSA1 has an absolute maximum junction temperature of +150 °C. For reliable long-term operation, Infineon recommends limiting T_j to ≤135 °C under continuous DC or PWM conditions. This requires maintaining T_A ≤70 °C with adequate PCB copper area (≥40 mm² per drain pad) and airflow, per the transient thermal impedance curves on page 6 of the datasheet.

Can this device be used in a synchronous buck converter as both high- and low-side switches?

Yes-BSL308CH6327XTSA1 is designed for synchronous rectification in buck topologies. The P-channel (Pin 1/2/4) serves as the high-side switch with bootstrap or isolated gate drive; the N-channel (Pin 3/5/6) acts as the low-side switch driven directly by logic-level signals. Gate timing must avoid shoot-through using dead-time control, as specified in Figure 9–10 output characteristics.

Does the device require external gate resistors for EMI suppression?

Gate resistors are recommended: 10 Ω for the N-channel (Pin 3) and 22 Ω for the P-channel (Pin 2) to limit dV/dt and reduce radiated emissions. These values balance switching speed (t_r/t_f) and EMI, as validated in Infineon's application note AN2015-05 for TSOP-6 dual MOSFET layouts.

Is the thermal pad electrically isolated from the drains?

No-the exposed thermal pad (connected to Pins 4 and 5) is electrically common to both P-Drain and N-Drain terminals. It must be soldered to a single large copper pour tied to the respective drain net (not ground) to ensure thermal performance and electrical safety. Splitting the pad or connecting it to ground violates the internal construction and degrades R_thJA.