Infineon Technologies BSL315PL6327HTSA1

Overview

BSL315PL6327HTSA1 from Infineon Technologies is a dual P-channel enhancement-mode MOSFET in PG-TSOP-6 package, rated for -30 V V_DS, 1.5 A continuous drain current at T_A=25 °C, and 270 mΩ R_DS(on) at V_GS=4.5 V. It is AEC-Q101 qualified, avalanche-rated, and optimized for automotive load switching and logic-level gate drive in space-constrained PCBs.

For engineers reviewing the BSL315PL6327HTSA1 datasheet, BSL315PL6327HTSA1 pinout, BSL315PL6327HTSA1 application, or BSL315PL6327HTSA1 equivalent, key selection criteria include its dual P-channel configuration, -1.5 V typical gate threshold voltage, 11 mJ single-pulse avalanche energy, and TSOP-6 thermal resistance of 250 K/W on minimal footprint FR4.

Technical Context

This dual P-channel MOSFET integrates two identical OptiMOS™-P 2 transistors in one monolithic die, sharing no internal connection between channels-enabling independent high-side or low-side switching. Its logic-level gate drive (V_GS(th) = -1.5 V typ) ensures full enhancement with 3.3 V/5 V microcontroller outputs, while the integrated body diode supports synchronous rectification and reverse polarity protection.

The device features robust transient performance: 6 kV/µs dv/dt immunity under harsh commutation, 8.2 ns reverse recovery time, and 2.1 nC Q_rr - critical for minimizing switching losses in DC-DC converters and motor H-bridge control circuits operating up to 150 °C junction temperature.

Key Specifications

Pinout & Package

PG-TSOP-6 package: 1.6 mm × 2.9 mm × 0.95 mm body, 0.65 mm pitch, exposed drain pad for thermal relief. Pin 1–6 arranged in single row with standard TSOP-6 footprint per Infineon outline drawing Rev 2.3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel logic-level MOSFET applications.

Compared with DMC3025LSD-13 and SI3993DV-T1-GE3, BSL315PL6327HTSA1 uniquely delivers AEC-Q101 qualification, 11 mJ avalanche robustness, and true dual-channel independence in a single TSOP-6 - making it optimal for automotive and safety-critical industrial sequencing.

Availability

BSL315PL6327HTSA1 is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC output stages, USB-C power delivery sinks, and medical patient monitor power sequencing requiring stable component supply across extended product lifecycles.

Supply support for BSL315PL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication infrastructure.

The OptiMOS™-P 2 product line delivers high-performance P-channel MOSFETs optimized for logic-level drive, low R_DS(on), and rugged operation in automotive body electronics and industrial power switching.

FAQ

What is the maximum junction temperature and thermal resistance of BSL315PL6327HTSA1?

The absolute maximum junction temperature is 150 °C. Thermal resistance from junction to ambient (R_thJA) is 250 K/W on a minimal 40 mm² FR4 PCB with 1 mm wide, 70 µm thick copper traces on both sides - verified per Infineon's Rev 2.3 test conditions.

Does BSL315PL6327HTSA1 support parallel operation of both channels?

No - the two P-channel MOSFETs are fully independent with no internal connection between sources, gates, or drains. They can be operated in parallel only if externally wired with matched gate resistors and symmetric layout to ensure current sharing; datasheet does not specify derating or matching guidelines for paralleling.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - the integrated body diode has 8.2 ns reverse recovery time and 2.1 nC Q_rr at I_F=−1.5 A, enabling use in low-voltage synchronous buck converters up to ~500 kHz. However, forward voltage is −0.86 V to −1.1 V, so efficiency gain versus external Schottky depends on load current and switching frequency.

What is the gate plateau voltage and why does it matter for driving?

The gate plateau voltage is −2.9 V, measured during gate charge testing at I_D=−1.5 A. This value indicates the voltage range where the MOSFET transitions from linear to saturation region; maintaining gate drive above this level ensures full enhancement and minimizes conduction loss during steady-state operation.