Infineon Technologies BSL316CH6327XTSA1

Overview

BSL316CH6327XTSA1 from Infineon Technologies is a complementary dual-channel small-signal MOSFET pair (P+ N-channel) in PG-TSOP6 package, rated for ±30 V V_DS, logic-level gate drive (4.5 V), and AEC-Q101 qualified for automotive use. It delivers R_DS(on) ≤ 270 mΩ (P) / 280 mΩ (N) at V_GS = ±4.5 V, supports avalanche energy up to 11 mJ (P) / 3.7 mJ (N), and operates from −55 °C to 150 °C - deployed in automotive body control modules for dual-direction load switching.

For engineers reviewing the BSL316CH6327XTSA1 datasheet, BSL316CH6327XTSA1 pinout, BSL316CH6327XTSA1 application, or BSL316CH6327XTSA1 equivalent, key selection criteria include complementary channel matching, logic-level gate compatibility, avalanche ruggedness, thermal resistance (R_thJA = 250 K/W on minimal FR4 footprint), and AEC-Q101 qualification for under-hood electronics.

Technical Context

This dual MOSFET integrates an OptiMOS™ 2 P-channel and OptiMOS™-P 2 N-channel device in one monolithic PG-TSOP6 package, enabling compact half-bridge or push-pull configurations without external pairing. Both channels share common source terminals and are optimized for synchronous operation with matched threshold voltages (V_GS(th) = −1.5 to −2 V / 1.2 to 2 V) and symmetrical dynamic parameters including C_iss, C_oss, and Q_g.

It features integrated body diodes with low V_SD (−1.1 V / 1.1 V), fast t_rr (8.2 ns / 9.1 ns), and Q_rr (2.1 nC / 2.6 nC), supporting efficient flyback and freewheeling in DC-DC converters and motor drivers. The device is fully lead-free, halogen-free, and qualified per IEC61249-2-21.

Key Specifications

Pinout & Package

PG-TSOP6 (6-pin thin shrink small outline package) with exposed drain pad for thermal enhancement; pin 1–6 arranged linearly with pin 1 marked by notch or dot. Pinout reflects complementary topology with shared source connections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET switching applications.

Compared with BSP316CH6327XTSA1, BSL316CH6327XTSA1 offers 88% higher current capability and 29% lower thermal resistance; versus DMC3025LSD-13, it provides true complementary operation but trades off voltage headroom and on-resistance for integrated high-side control.

Availability

BSL316CH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, LED lighting drivers, and engine bay sensor interfaces requiring stable component supply across long production lifecycles.

Supply support for BSL316CH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication infrastructure.

The OptiMOS™ product line targets high-efficiency, high-reliability power switching in automotive and industrial applications, emphasizing low R_DS(on), fast switching, and robust qualification for harsh environments.

FAQ

What is the maximum allowable gate-source voltage for BSL316CH6327XTSA1?

The absolute maximum V_GS is ±20 V per the datasheet. Operation beyond ±10 V does not improve R_DS(on) significantly and increases gate oxide stress risk. Recommended drive is −10 V / +10 V for full enhancement with margin, or −4.5 V / +4.5 V for logic-level compatibility.

Can BSL316CH6327XTSA1 be used in a half-bridge configuration?

Yes - its complementary P+N structure and matched dynamic characteristics (t_d(on), t_r, Q_g) make it suitable for half-bridge topologies. However, external bootstrap circuitry or isolated gate drivers are required for high-side P-channel operation in floating configurations, as no internal charge pump is integrated.

Is the body diode in BSL316CH6327XTSA1 suitable for reverse recovery in hard-switched converters?

Yes - the N-channel body diode has t_rr = 9.1 ns and Q_rr = 2.6 nC at I_F = 1.4 A, while the P-channel diode achieves t_rr = 8.2 ns and Q_rr = 2.1 nC. These values support operation up to 500 kHz in non-resonant topologies without excessive diode loss or voltage overshoot.

Does BSL316CH6327XTSA1 require special PCB layout considerations for thermal performance?

Yes - the exposed drain pad must be soldered to a minimum 40 mm² copper area with ≥2 vias (0.3 mm diameter) connecting to inner ground planes. Thermal resistance drops from 250 K/W (minimal FR4) to ~75 K/W with optimized layout, directly impacting safe operating area and continuous current capability.