Infineon Technologies BSL806NH6327XTSA1

Overview

BSL806NH6327XTSA1 from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in PG-TSOP6 package, rated for 20 V V_DS, 2.3 A continuous drain current at T_A = 25 °C, and ultra-low 1.8 V logic-level gate drive compatibility. It features avalanche-rated ruggedness, AEC-Q101 qualification, and integrated body diode with 0.82 V typical forward voltage at 2.3 A - deployed in automotive LED drivers and DC-DC converter synchronous rectification stages.

For engineers reviewing the BSL806NH6327XTSA1 datasheet, BSL806NH6327XTSA1 pinout, BSL806NH6327XTSA1 application, or BSL806NH6327XTSA1 equivalent, key selection criteria include its dual-channel layout, 55 mΩ R_DS(on) at V_GS = 1.8 V, 10.8 mJ single-pulse avalanche energy, and TSOP6 thermal resistance of 250 K/W on minimal FR4 footprint - critical for space-constrained automotive power management designs.

Technical Context

This dual N-channel MOSFET operates in enhancement mode with gate threshold voltage tightly specified between 0.3 V and 0.75 V (typ. 0.55 V), enabling reliable turn-on at 1.8 V logic levels. Its dynamic characteristics include 370 pF input capacitance, 118 pF output capacitance, and 20 pF reverse transfer capacitance at V_DS = 10 V, supporting fast switching with 7.5 ns turn-on delay and 3.7 ns fall time under standard test conditions.

The device integrates a co-packaged body diode with 11 ns reverse recovery time and 3.3 nC Q_rr, optimized for synchronous buck topologies. Thermal design is constrained by R_thJA = 250 K/W on 40 mm² FR4 PCB (1 mm × 70 µm traces), limiting continuous power dissipation to 0.5 W at ambient 25 °C - requiring careful layout for automotive-grade reliability.

Key Specifications

Pinout & Package

BSL806NH6327XTSA1 uses the PG-TSOP6 surface-mount package (3.05 × 1.5 mm, 0.95 mm height) with exposed drain pad for thermal enhancement. Pin numbering follows standard TSOP6 orientation (viewed top-side, notch left).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Compared with BSS138BKS and DMN3028LSD-13, BSL806NH6327XTSA1 uniquely combines dual-channel integration, 1.8 V logic compatibility, AEC-Q101 qualification, and 10.8 mJ avalanche energy - making it the only option qualified for automotive LED drivers and 1.8 V MCU-controlled power switches.

Availability

BSL806NH6327XTSA1 is available at Aetrix Electronics and suitable for automotive LED lighting, USB-C power delivery load switching, and industrial PLC digital output modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BSL806NH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication facilities.

The OptiMOS™2 Small-Signal-Transistor product line targets space-constrained, high-reliability applications requiring logic-level drive, low R_DS(on), and automotive qualification - especially in LED drivers, load switches, and synchronous rectifiers.

FAQ

Is BSL806NH6327XTSA1 pin-compatible with other TSOP6 dual MOSFETs?

No - BSL806NH6327XTSA1 uses a proprietary dual-common-source pinout (Pins 1 & 4 = Sources, Pins 2 & 5 = Drains, Pins 3 & 6 = Gates). It is not pin-compatible with BUK9M12-40H or DMN3028LSD-13, which use different internal channel connections and pin assignments.

What is the maximum allowable junction temperature during avalanche testing?

The device is rated for T_j,max = 150 °C during single-pulse avalanche events, as validated per AEC-Q101 stress test condition H. The 10.8 mJ E_AS value was measured at I_D = 2.3 A, R_GS = 25 Ω, and starting T_j ≤ 25 °C - exceeding this T_j limit risks irreversible parametric shift.

Does the body diode support bidirectional current flow in H-bridge configurations?

No - the integrated body diodes are unidirectional and oriented source-to-drain. In an H-bridge, using BSL806NH6327XTSA1 for both high-side and low-side requires external freewheeling diodes or complementary P-channel devices, as the internal diodes cannot conduct reverse current through the channel.

Can BSL806NH6327XTSA1 be used in linear regulator pass transistor applications?

Not recommended - its R_DS(on) is optimized for switching, not linear operation. At 2.3 A and 20 V V_DS, power dissipation would exceed 46 W, far beyond the 0.5 W thermal limit on FR4. The SOA curve shows safe operation only up to ~0.5 A at V_DS = 10 V in DC mode.