Infineon Technologies BSL806NL6327HTSA1

Overview

BSL806NL6327HTSA1 from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in PG-TSOP6 package, rated for 20 V V_DS, 2.3 A continuous drain current, and ultra-low 1.8 V logic-level gate drive. It features avalanche rating, AEC-Q101 qualification, and 55–82 mΩ R_DS(on) at V_GS = 1.8–2.5 V, enabling use in automotive body control modules and low-voltage DC-DC load switching.

For engineers reviewing the BSL806NL6327HTSA1 datasheet, BSL806NL6327HTSA1 pinout, BSL806NL6327HTSA1 application, or BSL806NL6327HTSA1 equivalent, key selection criteria include logic-level compatibility with 1.8 V microcontrollers, dual-channel integration for space-constrained PCBs, avalanche ruggedness in inductive load switching, and AEC-Q101 compliance for automotive grade reliability.

Technical Context

This dual N-channel MOSFET operates in enhancement mode with gate threshold voltage tightly specified between 0.3 V and 0.75 V (typ. 0.55 V), ensuring reliable turn-on under low-voltage logic conditions. Its R_DS(on) remains stable across temperature - 40–57 mΩ at V_GS = 2.5 V and I_D = 2.3 A - supporting consistent conduction loss in thermally demanding environments.

The device integrates an intrinsic body diode with 0.82–1.1 V forward voltage at 2.3 A and 11 ns reverse recovery time, enabling synchronous rectification and flyback energy handling. Dynamic parameters include 1.7 nC total gate charge and 370 pF input capacitance, optimizing switching speed while minimizing driver power requirements.

Key Specifications

Pinout & Package

BSL806NL6327HTSA1 uses the PG-TSOP6 surface-mount package (3.05 × 1.5 mm, 0.95 mm height) with exposed drain pad for thermal performance. Pin numbering follows standard TSOP6 layout: pins 1–3 and 4–6 form two independent N-channel channels sharing source terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Compared with DMN2020LSD-13 and BSL302SN H6327, BSL806NL6327HTSA1 uniquely delivers dual-channel AEC-Q101 compliance with sub-1 V gate threshold and 2.3 A capability - making it the only option for space-constrained, safety-critical automotive load switching.

Availability

BSL806NL6327HTSA1 is available at Aetrix Electronics and suitable for automotive body control, USB-C power delivery, industrial sensor node power gating, and smart home relay driver applications requiring stable component supply and long-term lifecycle support.

Supply support for BSL806NL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The OptiMOS™2 Small-Signal-Transistor product line targets high-efficiency, logic-level-compatible power switching in automotive and industrial applications where space, thermal performance, and reliability are critical.

FAQ

What is the maximum allowable gate-source voltage for BSL806NL6327HTSA1?

The absolute maximum V_GS is ±8 V, as specified in the datasheet's "Maximum ratings" table. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 0–2.5 V for logic-level control or 0–5 V with appropriate series resistance to limit peak transient currents during switching.

Does BSL806NL6327HTSA1 require external gate resistors in typical 1.8 V MCU-driven applications?

No external gate resistor is required for basic on/off control with 1.8 V GPIO, as the device's low Q_g (1.7 nC) and moderate C_iss (370 pF) allow clean switching without oscillation. However, a 10–47 Ω series resistor is recommended when driving at >500 kHz or in noisy environments to damp ringing and reduce EMI.

How is thermal performance affected when both channels operate simultaneously at full current?

Simultaneous 2.3 A operation on both channels increases junction-to-ambient thermal resistance due to shared die and package thermal path. With the minimal footprint PCB defined in the datasheet, R_thJA rises to ~250 K/W, limiting safe continuous power dissipation to ~0.5 W per channel at 25 °C ambient - confirming the need for proper copper pour and airflow in high-duty-cycle designs.

Can the internal body diodes be used for reverse polarity protection in 12 V automotive inputs?

No - the intrinsic body diodes are optimized for freewheeling, not reverse blocking. Their V_SD is 0.82–1.1 V at 2.3 A, and they lack reverse voltage rating beyond V_DS. For reverse polarity protection, a dedicated Schottky or PMOS-based solution with controlled turn-on characteristics is required.