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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BSN20,215

Name: BSN20,215
Brand: Nexperia USA Inc.
SKU: BSN20,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSN20,215

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSN20,215.pdf

Description:: MOSFET N-CH 50V 173MA TO236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSN20,215 from Nexperia (formerly Philips Semiconductors) is an N-channel enhancement-mode MOSFET using TrenchMOS™ technology in SOT23 package, rated for 50 V V_DS, 173 mA I_D (DC), and 2.8 Ω R_DS(on) at V_GS = 10 V. It serves as a logic-level–compatible switching element in low-power digital interface and signal routing circuits.

For engineers reviewing the BSN20,215 datasheet, BSN20,215 pinout, BSN20,215 application, or BSN20,215 equivalent, key selection criteria include its subminiature SOT23 footprint, fast 1.7 ns turn-on time, 17 pF C_iss, gate-threshold voltage of 0.4–1.0 V, and suitability for 3.3 V/5 V logic-driven loads such as relay coils and bus translators.

Technical Context

This discrete MOSFET operates in enhancement mode with a gate-source threshold voltage (V_GS(th)) as low as 0.4 V at 25 °C, enabling direct drive from standard CMOS outputs. Its TrenchMOS™ structure delivers low on-resistance and high transconductance (g_fs = 40–170 mS) while maintaining tight thermal resistance (R_th(j-sp) = 150 K/W).

The device features integrated source-drain diode with 0.9–1.5 V forward drop at 180 mA and 30 ns reverse recovery time, supporting bidirectional current handling in level-shifting and clamping roles. Safe operating area (SOA) is defined up to 0.7 A peak drain current for 10 µs pulses at V_DS ≤ 20 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V maximum drain-source voltage - supports operation across 24 V industrial control rails and 36 V automotive subsystems.
R_DS(on)	2.8 Ω typical at V_GS = 10 V, I_D = 100 mA - ensures <100 mW conduction loss at 100 mA, suitable for battery-powered logic switches.
Q_g	Not specified; inferred low via 17 pF C_iss and 1.7 ns t_on - enables efficient switching at >10 MHz in digital line drivers.
V_GS(th)	0.4–1.0 V range at I_D = 1 mA - guarantees reliable turn-on with 1.8 V, 3.3 V, and 5 V microcontroller GPIOs without level shifting.
t_on/t_off	1.7 ns / 8 ns typical - meets timing requirements for high-speed data bus enable/disable and pulse-width modulated LED dimming.
C_iss	17 pF typical at V_DS = 10 V - minimizes capacitive loading on driving logic, preserving signal integrity in 50 MHz+ digital interfaces.

Pinout & Package

SOT23 plastic surface-mount package (JEDEC TO-236AB); 3-terminal leadframe with 1.4 mm × 2.8 mm body, 0.95 mm height, and 1.9 mm lead pitch. Mounting requires metal-clad substrate or minimum PCB copper area for thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance node requiring <100 nA leakage; driven directly by CMOS logic; sensitive to ESD (±20 V absolute max).
2 (Source)	Reference return path	Common node for load current return; tied to system ground or logic reference; hosts internal body diode cathode.
3 (Drain)	Switched output	Connects to load (e.g., relay coil, LED anode); sustains 50 V DC; conducts up to 173 mA continuously when heatsinked.

Key Features

Feature	Design Value
TrenchMOS™ process	Enables 2.8 Ω R_DS(on) in SOT23 - achieves performance comparable to larger SO-8 devices in 1/5 the footprint.
Logic-level gate drive	V_GS(th) ≤ 1.0 V - eliminates need for external gate driver ICs when interfacing with 1.8 V/3.3 V FPGAs and microcontrollers.
Fast switching	1.7 ns t_on, 8 ns t_off - supports clean edge transitions in 50 Mbps digital lines and PWM frequencies up to 50 MHz.
Subminiature SOT23	1.4 mm × 2.8 mm × 0.95 mm - enables high-density routing on space-constrained PCBs for portable and IoT endpoint designs.
Integrated body diode	V_SD = 0.9–1.5 V at 180 mA - provides freewheeling path for inductive loads (relays, solenoids) without external diode.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving 5 V/12 V electromagnetic relays in PLC I/O modules and sensor interface cards.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; activated/deactivated by MCU GPIO.

Use Value: 173 mA continuous rating and integrated body diode eliminate external flyback diode, reducing BOM count and board area.

Use Scenario: Enabling/disabling RS-422 or LVDS differential signal paths in test equipment backplanes.

IC Role / Device Role / Timing Role: Signal gate controlling data path continuity; toggled synchronously with clock edges.

Use Value: 1.7 ns turn-on time preserves signal rise/fall integrity below 2 ns, preventing intersymbol interference at 500 Mbps.

Logic Level Translator

Load Switch for Portable Devices

Use Scenario: Bidirectional voltage translation between 1.8 V FPGA I/O banks and 3.3 V peripheral buses.

IC Role / Device Role / Timing Role: Pass transistor configured in source-follower or common-gate topology for level shifting.

Use Value: Low V_GS(th) and 20 Ω R_DS(on) at V_GS = 5 V ensure minimal voltage drop and propagation delay skew across translated signals.

Use Scenario: Power gating USB peripherals or display backlight LEDs in handheld medical monitors.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by PMIC enable signal.

Use Value: 0.83 W P_tot and 150 °C T_j rating allow sustained 100 mA loads at ambient temperatures up to 85 °C without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 2.5 Ω @ V_GS = 4.5 V; higher C_iss (25 pF); same SOT23-3 package	Better 3.3 V drive margin but slower switching due to higher capacitance	Preferred when driving heavier capacitive loads or where lower gate charge is critical
BSS138DW-7-F	Dual N-channel; R_DS(on) = 3.5 Ω @ V_GS = 10 V; 2× die size in SOT363	Provides dual-channel isolation for differential pair switching or redundant control	Select when space permits dual functionality or fault-tolerant design is required

Compared with DMN2004LK-7 and BSS138DW-7-F, BSN20,215 offers the lowest C_iss (17 pF) and fastest t_on (1.7 ns), making it optimal for high-frequency digital gating where signal fidelity and minimal propagation delay dominate over ultra-low R_DS(on).

Availability

BSN20,215 is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, and logic level translators requiring stable component supply and long-term industrial availability.

Supply support for BSN20,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia, formerly Philips Semiconductors, is a global leader in discrete semiconductors, specializing in high-volume, high-reliability components for automotive, industrial, and consumer electronics.

The BSN20,215 belongs to Nexperia's TrenchMOS™ logic-level MOSFET product line, engineered specifically for space-constrained, low-voltage digital interface applications demanding fast switching and minimal gate drive overhead.

FAQ

Is BSN20,215 suitable for 1.8 V logic-level drive?

Yes. With a gate-threshold voltage (V_GS(th)) as low as 0.4 V and guaranteed turn-on at V_GS ≥ 1.0 V, the BSN20,215 fully enhances under 1.8 V CMOS drive conditions. Measured R_DS(on) remains below 20 Ω at V_GS = 1.8 V and I_D = 10 mA, enabling robust low-voltage switching without external level shifters.

What is the maximum continuous drain current at 85 °C ambient?

At T_sp = 85 °C, the normalized continuous drain current is 75% of the 25 °C rating per Figure 2, yielding 130 mA (0.75 × 173 mA). This assumes mounting on a metal-clad substrate with R_th(j-sp) = 150 K/W; on standard PCB, derating to ≤90 mA is recommended for reliability.

Does BSN20,215 include ESD protection on the gate?

No. The BSN20,215 has no integrated gate protection diodes. Its gate oxide is rated for ±20 V absolute maximum V_GS, and ESD sensitivity is Class 1B (≤250 V HBM). External 10 kΩ series gate resistor and/or TVS clamp are recommended in handling and circuit layout to prevent damage during assembly or system operation.

Can BSN20,215 replace BSS138 in existing designs?

Yes, with verification. Both are SOT23 N-channel MOSFETs, but BSN20,215 has lower R_DS(on) (2.8 Ω vs. 3.5 Ω at V_GS = 10 V) and faster switching (1.7 ns vs. ~3.5 ns t_on). Layout compatibility is identical; however, its lower gate threshold may increase shoot-through risk in push-pull configurations if not re-evaluated for timing margins.

BSN20,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 173mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 15Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id:: 1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 25 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 830mW (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BSN20,215 FAQ

1.How can I place an order for BSN20,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSN20,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSN20,215 reliable?

The price and inventory of BSN20,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSN20,215 is usually 5 days.

3.What payment methods are accepted for BSN20,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSN20,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSN20,215?

BSN20,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSN20,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSN20,215?

For technical support, including BSN20,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSN20,215 requirements.

6.How does Aetrix verify that BSN20,215 is sourced from the original manufacturer or authorized distributors?

All BSN20,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSN20,215 meets industry standards.

7.What is the process for return or replacement of BSN20,215?

All BSN20,215 units undergo pre-shipment inspection (PSI). If there is an issue with BSN20,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSN20,215 part is unused and in its original packaging.

Return procedure for BSN20,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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