Infineon Technologies BSO110N03MSGXUMA1

Overview

BSO110N03MSGXUMA1 from Infineon Technologies is an N-channel Power-MOSFET in PG-DSO-8 package, optimized for 5 V gate drive in notebook and point-of-load (POL) applications. It delivers R_DS(on) = 11.1 mΩ @ V_GS = 4.5 V, 12.1 A continuous drain current at T_A = 25 °C, and 100% avalanche tested robustness for high-reliability DC-DC conversion stages.

For engineers reviewing the BSO110N03MSGXUMA1 datasheet, BSO110N03MSGXUMA1 pinout, BSO110N03MSGXUMA1 application, or BSO110N03MSGXUMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), 30 V V_DS rating, thermal resistance R_thJA = 110 K/W (min footprint), and qualification for consumer-level operation per IEC 61249-2-21 halogen-free compliance.

Technical Context

This OptiMOS™3 M-Series MOSFET uses trench-based silicon technology to achieve enhanced switching efficiency in high-frequency synchronous buck converters. Its gate threshold voltage (V_GS(th) = 1–2 V) enables reliable turn-on with 4.5 V logic-level drivers, while low output capacitance (C_oss = 390–520 pF) and fast switching times (t_r = 4.4 ns, t_f = 4.4 ns) support >1 MHz operation.

The device integrates a robust body diode with Q_rr = 10 nC and V_SD = 0.86–1.1 V @ I_F = 12.1 A, enabling efficient freewheeling in POL topologies. Thermal design is supported by R_thJS = 35 K/W and validated 6 cm² copper cooling performance under pulsed and steady-state conditions.

Key Specifications

Pinout & Package

BSO110N03MSGXUMA1 is housed in a surface-mount PG-DSO-8 (SOIC-8 variant with exposed drain pad) package, featuring thermal enhancement via the exposed drain tab soldered to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V logic-level MOSFET applications.

Compared with IRLML6344TRPBF and DMN3025LSD-13, BSO110N03MSGXUMA1 uniquely balances 12.1 A current capability, 11.1 mΩ on-resistance, and 7.2 nC gate charge in PG-DSO-8 - making it optimal for space-constrained, high-efficiency 1–2 MHz POL converters requiring consumer-grade qualification.

Availability

BSO110N03MSGXUMA1 is available at Aetrix Electronics and suitable for notebook VRMs, GPU power modules, and USB-C PD portable chargers requiring stable component supply and long-term industrial availability.

Supply support for BSO110N03MSGXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 M-Series - designed specifically for high-efficiency, high-frequency DC-DC conversion in consumer and computing applications where logic-level gate drive and thermal performance are critical.

FAQ

What is the maximum safe operating junction temperature for BSO110N03MSGXUMA1?

The absolute maximum junction temperature is 150 °C, as defined in the datasheet's "Operating and storage temperature" specification. Continuous operation above this limit risks parametric shift and accelerated wear-out; derating is required above 125 °C ambient using the published R_thJA curves and thermal footprint guidelines.

Does BSO110N03MSGXUMA1 support synchronous rectification in buck converters?

Yes - its low R_DS(on) (11.1 mΩ @ 4.5 V), fast switching (t_r/t_f = 4.4 ns), and low Q_gd (1.6 nC) make it suitable as a synchronous rectifier. The body diode's Q_rr = 10 nC and V_SD = 0.86 V enable efficient freewheeling with minimal reverse recovery loss.

Is the PG-DSO-8 package lead-free and RoHS compliant?

Yes - the device uses Pb-free plating and complies with RoHS Directive 2011/65/EU. It is also halogen-free per IEC 61249-2-21, with chlorine and bromine content below 900 ppm each, verified by material declaration and testing.

Can BSO110N03MSGXUMA1 be used with 3.3 V gate drive?

No - the gate threshold voltage range is 1–2 V, but full enhancement requires V_GS ≥ 4.5 V to achieve rated R_DS(on). At 3.3 V, R_DS(on) increases significantly (>30 mΩ), causing excessive conduction loss; it is not characterized or guaranteed for 3.3 V operation.