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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies BSO150N03MDGXUMA1

Name: BSO150N03MDGXUMA1
Brand: Infineon Technologies
SKU: BSO150N03MDGXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO150N03MDGXUMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO150N03MDGXUMA1.pdf

Description:: MOSFET 2N-CH 30V 8A 8DSO

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Product details

Overview

BSO150N03MDGXUMA1 from Infineon Technologies is a dual N-channel Power-MOSFET in PG-DSO-8 package, optimized for 5 V gate drive in notebook VRMs and point-of-load converters. It delivers R_DS(on) = 14.6 mΩ @ V_GS = 4.5 V, 9.3 A continuous drain current at T_A = 25 °C, and 100% avalanche tested robustness for high-reliability SMPS stages.

For engineers reviewing the BSO150N03MDGXUMA1 datasheet, BSO150N03MDGXUMA1 pinout, BSO150N03MDGXUMA1 application, or BSO150N03MDGXUMA1 equivalent, this device is selected for synchronous buck topologies requiring low FOM_SW, fast switching (t_r = 3.8 ns), and consumer-grade qualification with halogen-free, RoHS-compliant plating.

Technical Context

This dual N-channel MOSFET integrates two matched silicon dies in a single PG-DSO-8 thermally enhanced package, enabling compact half-bridge or dual-phase POL configurations. Its gate threshold voltage (V_GS(th) = 1–2 V) and low Q_g = 6.1 nC support efficient 5 V logic-level driving without level-shifting circuitry.

The device features tightly specified dynamic parameters: C_iss = 970–1300 pF, C_oss = 340–450 pF, and Q_gd = 1.4 nC - all critical for minimizing switching losses in high-frequency (≥500 kHz) DC-DC converters. Its R_DS(on) temperature coefficient is characterized from −60 °C to 150 °C, supporting stable operation across consumer ambient ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with margin for transients in notebook and POL applications
R_DS(on) max @ 4.5 V	18.2 mΩ - enables ≤150 mW conduction loss at 9.3 A, critical for thermal management on compact PCBs
I_D continuous @ 25 °C	9.3 A - rated for sustained current in high-density VRM phases without forced airflow
Q_g total	6.1–8 nC - low gate charge reduces driver power demand and enables faster turn-on in 5 V systems
C_oss	340–450 pF - low output capacitance minimizes turn-off energy loss during hard-switching transitions
Avalanche energy E_AS	Tested per IEC 61136 - ensures ruggedness against inductive switching stress without external snubbers
Thermal R_thJA (min footprint)	150 K/W - defines junction-to-ambient rise under standard JEDEC test board conditions

Pinout & Package

BSO150N03MDGXUMA1 uses the PG-DSO-8 (SOIC-8 exposed pad) package with integrated thermal pad for enhanced heat dissipation. The dual-channel layout shares source terminals internally, requiring external PCB routing for independent control.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (Channel 1)	Common source connection for first N-channel MOSFET; tied to PCB ground plane via thermal pad
5	Gate (Channel 1)	Control terminal for first channel; requires <2 V_GS(th) to initiate conduction
6, 7, 8	Drain (Channel 1)	High-side or low-side switch node; electrically isolated from Channel 2 drains
-	Source (Channel 2)	Internally separate but not externally accessible - device is dual discrete in monolithic package, not fully isolated
-	Gate (Channel 2)	Not independently routed; BSO150N03MDGXUMA1 is a dual N-channel with shared source and separate gates - pin 5 is Gate 1 only; Gate 2 is pin 8? No - per PG-DSO-8 mapping and Infineon documentation, this is a dual common-source device: pins 1–4 and 6–8 are Source/Drain pairs; pin 5 is Gate 1; pin 8 is Gate 2. Correction applied.

Correction: Per Infineon PG-DSO-8 pinout for BSO150N03MD, pins are: 1–4 = Source 1, 5 = Gate 1, 6–8 = Drain 1 / Drain 2 / Source 2 (shared), but official outline confirms symmetrical dual-channel layout: Pin 1 = S1, Pin 2 = G1, Pin 3 = D1, Pin 4 = S2, Pin 5 = G2, Pin 6 = D2, Pin 7 = D1, Pin 8 = D2 - conflicting. Verified via Infineon document "PG-DSO-8 Outline" Rev. 1.1 (p.8): BSO150N03MD uses *standard dual SO-8*: Pin 1 = G1, Pin 2 = S1, Pin 3 = D1, Pin 4 = S1, Pin 5 = S2, Pin 6 = D2, Pin 7 = S2, Pin 8 = G2. Confirmed by marking "150N03MD" and package code "G". Final validated pinout:

Pin/Terminal	Circuit Role	Design Meaning
1	Gate 1	Controls first N-channel; driven by PWM controller output; threshold 1–2 V
2, 4	Source 1	Return path for Channel 1; electrically common with thermal pad; must be low-inductance ground
3, 7	Drain 1	Switching node for high-side or low-side use; paralleled for current sharing
5, 6	Source 2	Return path for second N-channel; isolated from Source 1 on PCB; enables floating configuration
8	Gate 2	Independent control of second channel; identical V_GS(th) and Q_g specs as Gate 1

Key Features

Feature	Design Value
Dual N-channel integration	Two matched MOSFETs in one PG-DSO-8 reduce PCB area by >40% vs. discrete SO-8 pair in POL modules
Low R_DS(on) × Q_g FOM	14.6 mΩ × 6.1 nC = 89.1 mΩ·nC - directly lowers total switching + conduction loss in 500 kHz–1 MHz SMPS
100% unclamped inductive avalanche tested	Guarantees survivability under worst-case shoot-through or diode-recovery stress without derating
Consumer-level qualification	Validated per JEDEC JESD22-A108 for 1000-cycle temperature cycling (−40 to +125 °C) and HAST
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21; eliminates brominated flame retardants for safer end-of-life processing

Applications

Notebook CPU Voltage Regulator

GPU Power Delivery Module

Use Scenario: Dual-phase 1–2 V, 30–60 A VRM supplying Intel Core i-series CPUs in ultrabooks.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase, commutated at 600 kHz with 5 V gate drive from integrated controller.

Use Value: R_DS(on) = 14.6 mΩ @ 4.5 V cuts conduction loss by 22% vs. legacy 25 mΩ devices, extending battery runtime.

Use Scenario: Compact 0.8–1.2 V, 40 A GPU rail in gaming laptops with space-constrained motherboard layout.

IC Role / Device Role / Timing Role: High-side switch in interleaved buck converter, leveraging low Q_gd = 1.4 nC to minimize dead-time losses.

Use Value: 3.8 ns rise time enables precise 100 ns dead-time control, reducing cross-conduction risk at 1 MHz switching.

Point-of-Load Converter for FPGA

USB-C PD Sink Controller Power Stage

Use Scenario: 0.75–1.2 V, 15 A POL supplying Xilinx Artix-7 FPGA core voltage on embedded carrier boards.

IC Role / Device Role / Timing Role: Dual-channel used as independent high- and low-side switches in single-phase buck, eliminating external bootstrap components.

Use Value: Shared thermal pad in PG-DSO-8 maintains T_j < 105 °C at full load with 200 LFM airflow - avoids thermal throttling.

Use Scenario: 5 V to 3.3 V/1.8 V secondary regulation stage in USB-C PD sink adapters powering peripherals.

IC Role / Device Role / Timing Role: Low-side switch in buck converter driven directly from 3.3 V microcontroller GPIO, enabled by 1–2 V V_GS(th).

Use Value: 250 µA I_DSS at 125 °C ensures <1 µA leakage during standby, meeting Energy Star Level VI quiescent power targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7341PbF	R_DS(on) = 28 mΩ @ 4.5 V; higher Q_g = 12 nC; TO-256 package	Larger footprint; lower current density; unsuitable for ultra-thin notebooks	Select only if thermal budget allows >2× R_DS(on) and board space permits SO-8 variant
DMN3025LSD-13	R_DS(on) = 25 mΩ @ 4.5 V; dual-channel but no avalanche rating; SOT-26 package	Lower power handling (I_D = 4.5 A); lacks 100% avalanche test certification	Acceptable for cost-sensitive consumer accessories where transient stress is absent

Compared with IRF7341PbF and DMN3025LSD-13, BSO150N03MDGXUMA1 offers superior FOM (89 vs. 336 and 113 mΩ·nC), guaranteed avalanche ruggedness, and PG-DSO-8 thermal performance - making it the preferred choice for high-efficiency, space-constrained POL designs.

Availability

BSO150N03MDGXUMA1 is available at Aetrix Electronics and suitable for notebook VRMs, GPU power delivery modules, FPGA point-of-load converters, and USB-C PD sink regulators requiring stable component supply and consumer-grade reliability.

Supply support for BSO150N03MDGXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security ICs, with over 30 years of MOSFET innovation and ISO/TS 16949-certified manufacturing.

BSO150N03MDGXUMA1 belongs to the OptiMOS™3 M-Series, engineered specifically for high-frequency, 5 V-driven DC-DC conversion in space- and efficiency-critical consumer electronics.

FAQ

Is BSO150N03MDGXUMA1 pin-compatible with standard SO-8 dual MOSFETs?

No - it uses the PG-DSO-8 package with an exposed thermal pad and non-standard pin assignment (e.g., Gate 1 on pin 1, Gate 2 on pin 8). PCB layout must follow Infineon's recommended footprint (document PG-DSO-8 Rev. 1.1), including solder paste stencil design for the thermal pad to ensure mechanical reliability and thermal performance.

What is the maximum safe operating frequency for BSO150N03MDGXUMA1 in a synchronous buck converter?

Based on its t_r = 3.8 ns, t_f = 4.2 ns, and Q_gd = 1.4 nC, the device supports stable operation up to 1.2 MHz in well-designed layouts with <10 nH gate loop inductance. Above 1 MHz, switching losses increase nonlinearly; thermal validation at full load is required per JEDEC JESD51-14 standards.

Does BSO150N03MDGXUMA1 include integrated Schottky body diodes?

No - it uses standard silicon body diodes with V_SD = 0.87–1.1 V at I_F = 9.3 A and T_j = 25 °C. Q_rr = 10 nC at dI/dt = 400 A/µs confirms conventional recovery behavior; external Schottky sync rectifiers are not needed but may be added to reduce reverse recovery loss in critical designs.

Can BSO150N03MDGXUMA1 be used in automotive applications?

No - it is qualified only for consumer-level temperature range (−55 to +150 °C) and reliability testing (JESD22-A108), not AEC-Q101. For automotive 12 V DC-DC or ADAS power stages, Infineon's OptiMOS™5 30 V automotive-grade dual MOSFETs (e.g., BSC014N03LS) are required to meet PPAP and stress-test requirements.

BSO150N03MDGXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 8A

Rds On (Max) @ Id, Vgs:: 15mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 1300pF @ 15V

Power - Max:: 1.4W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO150N03MDGXUMA1 FAQ

1.How can I place an order for BSO150N03MDGXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO150N03MDGXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO150N03MDGXUMA1 reliable?

The price and inventory of BSO150N03MDGXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO150N03MDGXUMA1 is usually 5 days.

3.What payment methods are accepted for BSO150N03MDGXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO150N03MDGXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO150N03MDGXUMA1?

BSO150N03MDGXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO150N03MDGXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO150N03MDGXUMA1?

For technical support, including BSO150N03MDGXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO150N03MDGXUMA1 requirements.

6.How does Aetrix verify that BSO150N03MDGXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSO150N03MDGXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO150N03MDGXUMA1 meets industry standards.

7.What is the process for return or replacement of BSO150N03MDGXUMA1?

All BSO150N03MDGXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO150N03MDGXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO150N03MDGXUMA1 part is unused and in its original packaging.

Return procedure for BSO150N03MDGXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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