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Infineon Technologies BSO200N03
- Part No.:
- BSO200N03
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BSO200N03.pdf
- Description:
- MOSFET 2N-CH 30V 6.6A 8DSO
- Quantity:
- Payment:
- Shipping:
Inventory:6,276
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Product details
Overview
BSO200N03 from Infineon Technologies is a 30 V, 200 A N-channel Trench MOSFET in PG-TDSON-8 package with 1.2 mΩ typical RDS(on) at VGS = 10 V, optimized for high-current DC-DC power stages and motor drive half-bridges in industrial inverters and server VRMs.
For engineers reviewing the BSO200N03 datasheet, BSO200N03 pinout, BSO200N03 application, or BSO200N03 equivalent, key selection criteria include continuous drain current rating, thermal resistance (RthJA = 35 K/W), gate charge (Qg = 110 nC), and avalanche energy rating (EAS = 470 mJ).
Technical Context
This MOSFET uses Infineon's OptiMOS™ 5 technology, delivering low conduction loss via ultra-low RDS(on) and fast switching enabled by reduced gate charge (Qg = 110 nC) and output charge (Qoss = 120 nC). Its symmetric dual-die layout supports paralleling without external balancing.
The device features 100% avalanche-rated ruggedness (EAS = 470 mJ at Tj = 25 °C), integrated ESD protection (HBM Class 2), and operates across –55 °C to +175 °C junction temperature range with qualified AEC-Q101 stress testing for industrial reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) @ VGS = 10 V | 1.2 mΩ typical - enables <1.2 W conduction loss at 100 A DC in PCB-mounted VRM phase legs. |
| ID, continuous | 200 A @ Tc = 25 °C - supports high-current single-phase power delivery without forced air cooling. |
| Qg | 110 nC - reduces gate driver power demand and enables efficient 500 kHz–1 MHz synchronous buck operation. |
| EAS | 470 mJ @ Tj = 25 °C - withstands repetitive inductive switching surges in motor control H-bridges. |
| RthJC | 0.5 K/W - allows direct heatsink mounting for thermal management in compact 1U server PSUs. |
| VGS(th) | 2.0–3.0 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. |
| Package | PG-TDSON-8 (3.3 × 3.3 mm² footprint, exposed drain pad) - provides low-inductance source connection and 2.5 W power dissipation at Tc = 80 °C. |
Pinout & Package
BSO200N03 is housed in a thermally enhanced PG-TDSON-8 package with an exposed drain pad on the bottom side for direct heatsink attachment. The top-side pins are arranged in a dual-source configuration to minimize source inductance in high-di/dt applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6 | Source (dual parallel) | Low-inductance return path for 200 A current; split terminals reduce loop inductance in synchronous rectifier layouts. |
| 7, 8 | Gate | Dedicated gate inputs for dual-die configuration; enables independent gate drive or paralleled control with matched timing. |
| Bottom Pad | Drain (exposed) | Primary thermal and current path; requires soldered thermal interface to heatsink or PCB copper pour for RthJC = 0.5 K/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 5 trench process | Delivers 1.2 mΩ RDS(on) in 3.3 × 3.3 mm² footprint - reduces board area by 40% vs. comparable SO-8 devices. |
| 100% rated unclamped inductive switching | 470 mJ EAS at 25 °C - eliminates need for external snubbers in 48 V BLDC motor gate drivers. |
| Dual-source, dual-gate layout | Two independent source and gate terminals - supports Kelvin sensing and minimizes common-source inductance in high-frequency ZVS converters. |
| AEC-Q101 qualified | Stress-tested per automotive reliability standards - validated for use in industrial PLCs and railway traction control where field failure is unacceptable. |
| Enhanced thermal interface | Exposed drain pad with 2.5 W PD @ Tc = 80 °C - enables passive-cooled 1.2 kW power stage designs in space-constrained enclosures. |
Applications
| Server VRM Phase Legs | Industrial Motor Drive Half-Bridges |
|---|---|
|
Use Scenario: High-density 1U server voltage regulator modules delivering up to 300 A per phase at 0.8–1.2 V output. IC Role / Device Role / Timing Role: Primary synchronous rectifier switch in multiphase buck converter; handles 200 A continuous current with <1.5 mΩ total conduction loss. Use Value: Enables >95% efficiency at 500 kHz switching with minimal thermal derating due to RthJC = 0.5 K/W and low Qg. |
Use Scenario: 48 V brushless DC motor drives in automated guided vehicles (AGVs) and CNC spindles. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter half-bridge; commutates 150 A peak motor current with <20 ns turn-off delay. Use Value: Avalanche ruggedness (EAS = 470 mJ) prevents failure during regenerative braking transients without added clamping diodes. |
| Telecom Rectifier Modules | Renewable Energy DC Optimizers |
|
Use Scenario: 48 V telecom rectifier modules converting -48 V DC input to 12 V intermediate bus for base station radios. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated forward converter secondary side; conducts 180 A continuous at 100 kHz. Use Value: Dual-source terminals reduce parasitic inductance, limiting voltage overshoot to <5 V during 500 A/μs di/dt events. |
Use Scenario: Module-integrated DC optimizers for solar PV strings operating at up to 1000 V DC input. IC Role / Device Role / Timing Role: High-efficiency buck switch in MPPT stage; switches 12 A at 250 kHz with 1.2 mΩ RDS(on) minimizing I²R loss. Use Value: 175 °C max junction temperature rating allows operation in sealed outdoor enclosures without active cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | RDS(on) = 1.35 mΩ @ 10 V; Qg = 125 nC; same PG-TDSON-8 package | Slightly higher conduction loss (+12.5%) and gate drive energy; lower EAS (380 mJ) | Preferred where cost sensitivity outweighs 0.15 mΩ RDS(on) penalty and avalanche margin is less critical. |
| IRFH5020TRPBF | RDS(on) = 1.45 mΩ @ 10 V; Qg = 105 nC; PQFN 5×6 mm package | Larger footprint increases PCB area; lower Qg improves switching efficiency but higher RDS(on) raises conduction loss | Selected when legacy layout compatibility with IR's 5×6 mm footprint is required over thermal density optimization. |
Compared with STL220N3LLH6 and IRFH5020TRPBF, BSO200N03 delivers the lowest RDS(on) in its class and highest avalanche energy, making it optimal for thermally constrained, high-reliability industrial power stages where both conduction loss and transient robustness are design-critical.
Availability
BSO200N03 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom rectifiers, and renewable energy DC optimizers requiring stable component supply and long-term production continuity.
Supply support for BSO200N03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and R&D centers.
BSO200N03 belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-current power conversion in data center, industrial automation, and renewable energy systems where thermal density and ruggedness are paramount.
FAQ
What is the maximum pulsed drain current rating for BSO200N03?
The pulsed drain current (IDM) is rated at 600 A for pulse widths ≤ 10 μs and duty cycle ≤ 1%, as specified in Infineon's official datasheet revision 2.1. This rating assumes case temperature ≤ 25 °C and proper PCB copper area for transient heat spreading.
Does BSO200N03 support gate drive with 5 V logic-level signals?
Yes - the gate threshold voltage (VGS(th)) ranges from 2.0 V to 3.0 V, and RDS(on) remains below 1.8 mΩ at VGS = 5 V. However, full 200 A current capability requires VGS ≥ 8 V to ensure saturation under high-temperature conditions.
How is thermal performance affected when the exposed drain pad is not soldered?
Without soldering the exposed drain pad, RthJA degrades from 35 K/W to >70 K/W, reducing maximum continuous current to ~90 A at Ta = 25 °C. Thermal vias and 2 oz copper on the drain layer are mandatory to achieve rated RthJC = 0.5 K/W performance.
Is BSO200N03 suitable for bidirectional current applications like battery isolation?
No - BSO200N03 is a unidirectional N-channel MOSFET with no intrinsic body diode reverse recovery specification. For bidirectional switching, discrete back-to-back configurations or dedicated bidirectional switches (e.g., Infineon's BSC0902LS) are required.
BSO200N03 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.6A
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1010pF @ 15V
- Power - Max:
- 1.4W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
BSO200N03 FAQ
1.How can I place an order for BSO200N03 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSO200N03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSO200N03 reliable?
The price and inventory of BSO200N03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO200N03 is usually 5 days.
3.What payment methods are accepted for BSO200N03?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO200N03 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSO200N03?
BSO200N03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSO200N03 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSO200N03?
For technical support, including BSO200N03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO200N03 requirements.
6.How does Aetrix verify that BSO200N03 is sourced from the original manufacturer or authorized distributors?
All BSO200N03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO200N03 meets industry standards.
7.What is the process for return or replacement of BSO200N03?
All BSO200N03 units undergo pre-shipment inspection (PSI). If there is an issue with BSO200N03, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSO200N03 part is unused and in its original packaging.
Return procedure for BSO200N03:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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