Infineon Technologies BSO203PNTMA1
- Part No.:
- BSO203PNTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BSO203PNTMA1.pdf
- Description:
- MOSFET 2P-CH 20V 8.2A 8DSO
- Quantity:
- Payment:

- Shipping:

Inventory:8,827
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BSO203PNTMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -20 V VDS, 21 mΩ RDS(on) at -4.5 V VGS, and -8.2 A continuous drain current. It features Super Logic Level gate drive (2.5 V rated), 150°C operation, avalanche rating, and dv/dt ruggedness - deployed in compact DC-DC converters and load-switching circuits requiring low-voltage gate control.
For engineers reviewing the BSO203PNTMA1 datasheet, BSO203PNTMA1 pinout, BSO203PNTMA1 application, or BSO203PNTMA1 equivalent, key selection criteria include its -2.5 V logic-compatible threshold, 97 mJ single-pulse avalanche energy, -6 kV/µs dv/dt rating, and SO-8 thermal performance with RthJA = 62.5 K/W on 6 cm² copper.
Technical Context
This device implements a trench-based OptiMOS™-P structure optimized for low RDS(on) at logic-level gate voltages. Its gate threshold voltage ranges from -0.6 V to -1.2 V, enabling reliable turn-on with 2.5 V microcontroller outputs while maintaining robust noise immunity via ±12 V VGS rating.
The integrated body diode supports synchronous rectification with 0.85–1.3 V forward voltage at 8.2 A and exhibits 35.7–44.6 ns reverse recovery time. Dynamic parameters include 2242 pF input capacitance and 32.4–48.6 nC total gate charge, supporting efficient switching up to several hundred kHz in buck regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for low-side switch applications in 12 V and 5 V rail systems |
| RDS(on) @ VGS = -4.5 V | 21 mΩ max - Enables <170 mW conduction loss at -8.2 A, critical for thermally constrained PCB layouts |
| ID continuous | -8.2 A @ TA = 25°C - Sustains full-load current in industrial power modules without forced air |
| EAS | 97 mJ - Withstands single-pulse inductive energy in motor gate drivers and relay snubbers |
| dv/dt rating | -6 kV/µs - Prevents false turn-on during fast voltage transients in high-noise automotive environments |
| VGS(th) | -0.6 to -1.2 V - Ensures guaranteed turn-on with 2.5 V logic while avoiding unintended activation near ground |
| Qg | 32.4–48.6 nC - Determines gate driver strength requirement for <100 ns switching transitions |
Pinout & Package
BSO203PNTMA1 is housed in an SO-8 surface-mount package with exposed drain pads for enhanced thermal dissipation. The package complies with JEDEC MS-012AC and supports reflow soldering per IPC/JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 8 (D1) | Drain 1 | Primary high-current drain connection; internally tied to pins 2, 3, 4, 5, 6, 7 for low-inductance parallel routing |
| 2, 3, 4, 5, 6, 7 (D2) | Drain 2 | Extended drain terminals forming thermal pad - must be soldered to ≥6 cm² copper area for RthJA = 62.5 K/W |
| 1 (S1) | Source 1 | Low-side reference node; connects to ground plane in high-side switch configurations |
| 8 (S2) | Source 2 | Secondary source terminal - used for Kelvin sensing or separate return path in precision current monitoring |
| 1 (G1) | Gate 1 | Logic-level control input; requires <100 Ω series resistance to damp ringing from 34 S transconductance |
| 8 (G2) | Gate 2 | Redundant gate terminal - not internally connected; left unconnected or tied to G1 for EMI reduction |
Key Features
| Feature | Design Value |
|---|---|
| Super Logic Level gate | Guaranteed turn-on at VGS = -2.5 V enables direct interface with 2.5 V/3.3 V MCUs without level-shifting |
| Avalanche rated | 97 mJ single-pulse EAS allows safe operation in inductive switching without external clamping diodes |
| dv/dt ruggedness | -6 kV/µs rating prevents spurious turn-on during fast bus transients in automotive 12 V systems |
| 150°C operation | Extended junction temperature range supports sealed enclosures and high-ambient industrial environments |
| OptiMOS™-P trench process | Delivers 21 mΩ RDS(on) in SO-8 - 30% lower than comparable planar P-MOSFETs at same voltage class |
Applications
| Power Load Switch | Battery Protection Circuit |
|---|---|
Use Scenario: Hot-swap insertion of peripheral modules in industrial PLC backplanes. IC Role / Device Role / Timing Role: Low-side P-channel switch controlling 5 V/12 V supply enable with soft-start via gate RC network. Use Value: -2.5 V logic compatibility eliminates level shifter; 21 mΩ RDS(on) limits voltage drop to <170 mV at 8 A, preserving downstream regulation margin. | Use Scenario: Overcurrent and short-circuit protection in 2-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent blocking switch placed between battery and system load. Use Value: 97 mJ avalanche energy absorbs fault energy during sudden short events; -1.2 V VGS(th) ensures clean turn-off when protection IC pulls gate high. |
| DC-DC Synchronous Rectifier | Automotive Body Control Module |
Use Scenario: Secondary-side rectification in isolated 5 V flyback converters for USB-C PD adapters. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: 0.85 V VSD at 8.2 A yields 30% lower forward loss vs. 0.45 V Schottky; 35.7 ns trr minimizes dead-time losses. | Use Scenario: Power distribution to LED lighting and window lift motors in vehicle door modules. IC Role / Device Role / Timing Role: High-side switch driving resistive/inductive loads with built-in short-circuit protection feedback. Use Value: -6 kV/µs dv/dt rating prevents false triggering during CAN/LIN bus noise; SO-8 footprint fits tight space constraints in door ECUs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB120P03L | VDS = -30 V, RDS(on) = 12 mΩ @ -4.5 V, TO-263 package | Higher voltage rating and lower RDS(on), but larger footprint and higher gate charge (65 nC) | Preferred where 30 V blocking is required and board space permits TO-263 mounting |
| SI2301DS-T1-BE3 | VDS = -20 V, RDS(on) = 115 mΩ @ -2.5 V, SOT-23 package, 2.6 A ID | Smaller package and lower cost, but significantly higher on-resistance and lower current capability | Suitable only for sub-3 A loads where SO-8 thermal mass is unnecessary |
Compared with IPB120P03L and SI2301DS-T1-BE3, BSO203PNTMA1 uniquely balances -20 V rating, 8.2 A current, 21 mΩ RDS(on), and SO-8 thermal performance - making it optimal for space-constrained 12 V industrial switches where logic-level drive and avalanche robustness are mandatory.
Availability
BSO203PNTMA1 is available at Aetrix Electronics and suitable for industrial power load switching, battery protection circuits, DC-DC synchronous rectification, and automotive body control modules requiring stable component supply and long-term lifecycle support.
Supply support for BSO203PNTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.
BSO203PNTMA1 belongs to the OptiMOS™-P small-signal transistor product line, engineered specifically for high-efficiency, logic-level-driven P-channel switching in space- and thermally-constrained industrial and automotive power stages.
FAQ
What is the maximum allowable gate-source voltage for BSO203PNTMA1?
The absolute maximum gate-source voltage is ±12 V. Exceeding this rating risks permanent oxide damage. During normal operation, gate drive should remain within -2.5 V to -4.5 V for logic-level compatibility and optimal RDS(on); transient spikes above ±12 V require external clamping with Zener diodes rated ≤12 V.
Can BSO203PNTMA1 be used in linear (analog) mode for current regulation?
No - BSO203PNTMA1 is not characterized or qualified for linear-mode operation. Its Safe Operating Area (SOA) graph shows limited DC capability (<1 A at -10 V VDS), and thermal runaway risk increases rapidly above 100°C junction temperature. It is designed exclusively for switching applications with defined duty cycles and adequate heatsinking.
Is the SO-8 package lead-free and RoHS compliant?
Yes - BSO203PNTMA1 uses lead-free terminations and complies with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The package meets JEDEC J-STD-020 moisture sensitivity level MSL-3 and is qualified for standard Pb-free reflow profiles with peak temperature ≤260°C.
Does the device include integrated ESD protection on the gate?
No - BSO203PNTMA1 has no internal gate ESD protection diodes. Gate oxide is sensitive to electrostatic discharge; handling requires Class 1B ESD controls (≤250 V HBM). External 10 kΩ gate resistor and 12 V Zener clamp between gate and source are recommended for board-level ESD robustness in automated assembly environments.
BSO203PNTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 8.2A
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2242pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
BSO203PNTMA1 FAQ
1.How can I place an order for BSO203PNTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSO203PNTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSO203PNTMA1 reliable?
The price and inventory of BSO203PNTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO203PNTMA1 is usually 5 days.
3.What payment methods are accepted for BSO203PNTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO203PNTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSO203PNTMA1?
BSO203PNTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSO203PNTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSO203PNTMA1?
For technical support, including BSO203PNTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO203PNTMA1 requirements.
6.How does Aetrix verify that BSO203PNTMA1 is sourced from the original manufacturer or authorized distributors?
All BSO203PNTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO203PNTMA1 meets industry standards.
7.What is the process for return or replacement of BSO203PNTMA1?
All BSO203PNTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO203PNTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSO203PNTMA1 part is unused and in its original packaging.
Return procedure for BSO203PNTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSO203PNTMA1 Tags

-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

-
2N7002DW-7-F
Diodes Incorporated

-
SSM6L56FE,LM
Toshiba Semiconductor and Storage

-
SSM6N37FU,LF
Toshiba Semiconductor and Storage

-
2N7002DWH6327XTSA1
Infineon Technologies

-
2N7002BKS,115
Nexperia USA Inc.

-
DMG1016UDW-7
Diodes Incorporated

-
UM6K33NTN
Rohm Semiconductor

-
DMG6602SVT-7
Diodes Incorporated

-
EM6K34T2CR
Rohm Semiconductor

-
UM6K34NTCN
Rohm Semiconductor

-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

