Infineon Technologies BSO207PHXUMA1

Overview

BSO207PHXUMA1 from Infineon Technologies is a dual P-channel MOSFET in PG-DSO-8 package, rated for -20 V V_DS, 45 mΩ R_DS(on) at V_GS = 4.5 V, and -5.7 A continuous drain current at T_A = 25 °C. It operates up to 150 °C junction temperature and features Super Logic Level gate drive (2.5 V rated), enabling direct interface with low-voltage microcontrollers in compact power management circuits.

For engineers reviewing the BSO207PHXUMA1 datasheet, BSO207PHXUMA1 pinout, BSO207PHXUMA1 application, or BSO207PHXUMA1 equivalent, this device is selected for high-efficiency, space-constrained DC-DC load switching, battery protection, and dual-rail power path control where logic-level gate drive and thermal robustness are critical.

Technical Context

This dual P-channel MOSFET integrates two matched enhancement-mode transistors in a single SO-8 package, sharing common source terminals and independent gate inputs. Its Super Logic Level threshold (V_GS(th) = −0.6 to −1.2 V) ensures full enhancement at 2.5 V gate drive, while low R_DS(on) and optimized gate charge (Q_g = −12 to −16 nC) support fast, low-loss switching in synchronous buck topologies and OR-ing applications.

Thermal design is supported by validated R_thJA values: 110 K/W (minimal footprint, pulsed) and 80 K/W (6 cm² copper area, steady state). The device includes an integrated body diode with Q_rr = 6.2 nC and V_SD = −1.1 V at I_F = −5.7 A, suitable for freewheeling and reverse-current blocking.

Key Specifications

Pinout & Package

BSO207PHXUMA1 is housed in a PG-DSO-8 (SO-8) surface-mount package with exposed drain pad for enhanced thermal performance. Pin numbering follows JEDEC MS-012 standard, with pins 1–4 and 5–8 forming two independent P-channel channels.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel load switching applications.

Compared with DMC2038LSD-13 and SI6926ADQ-T1-GE3, BSO207PHXUMA1 offers superior avalanche ruggedness (44 mJ), wider gate threshold tolerance (−0.6 to −1.2 V), and higher continuous current capability - making it preferred for industrial and automotive load-switching where reliability under electrical stress is mandatory.

Availability

BSO207PHXUMA1 is available at Aetrix Electronics and suitable for battery management systems, portable instrumentation, telecom power OR-ing, and industrial PLC I/O modules requiring stable component supply across multi-year production cycles.

Supply support for BSO207PHXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BSO207PHXUMA1 belongs to the OptiMOS™ P-Channel Power Transistor product line, engineered for high-efficiency, logic-level-driven load switching in space-constrained and thermally demanding applications.

FAQ

What is the maximum allowable gate-source voltage for BSO207PHXUMA1?

The absolute maximum gate-source voltage is ±12 V. Exceeding this rating risks permanent gate oxide damage. In practice, gate drive should be clamped to ≤ ±10 V with series resistance and/or Zener protection, especially in noisy environments or when driving inductive loads that may induce voltage overshoot on the gate node.

Can BSO207PHXUMA1 be used in linear (analog) mode operation?

No - BSO207PHXUMA1 is not characterized or guaranteed for linear mode operation. Its Safe Operating Area (SOA) curve shows limited capability beyond pulse widths of 10 µs at moderate V_DS; sustained linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of SOA derating data beyond short pulses.

Is the body diode suitable for continuous freewheeling in buck converters?

Yes - the integrated body diode supports continuous forward current up to −2.2 A and pulsed current up to −23 A. With V_SD = −1.1 V at −5.7 A and Q_rr = 6.2 nC, it performs acceptably in low-frequency (< 500 kHz) buck topologies, though synchronous rectification using the second channel is recommended for higher efficiency.

Does BSO207PHXUMA1 require a heatsink in typical 2-layer FR4 PCB layouts?

Not necessarily - with 6 cm² of 70 µm copper on the drain pad, R_thJA is 80 K/W, allowing ~1.6 W dissipation at 70 °C ambient before reaching 150 °C junction. For continuous 5.7 A operation at 45 mΩ, power loss is ~1.45 W, so thermal margin exists without added heatsink under still-air conditions.