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Infineon Technologies BSO207PNTMA1
- Part No.:
- BSO207PNTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BSO207PNTMA1.pdf
- Description:
- MOSFET 2P-CH 20V 5.7A 8DSO
- Quantity:
- Payment:
- Shipping:
Inventory:8,963
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Product details
Overview
BSO207PNTMA1 from Infineon Technologies is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -20 V VDS, 45 mΩ RDS(on) at -4.5 V VGS, and -5.7 A continuous drain current. It features Super Logic Level gate drive (2.5 V rated), 150 °C operation, and avalanche/ dv/dt ruggedness-designed for compact DC-DC converter high-side switching and load switching in industrial power management.
For engineers reviewing the BSO207PNTMA1 datasheet, BSO207PNTMA1 pinout, BSO207PNTMA1 application, or BSO207PNTMA1 equivalent, key selection criteria include its dual-channel P-channel configuration, low RDS(on) at logic-level gate drive, thermal robustness up to 150 °C, and integrated avalanche-rated body diode for inductive load handling.
Technical Context
This dual P-MOSFET integrates two identical enhancement-mode channels in a single SO-8 package with shared source terminals (S1/S2) and independent gates (G1/G2) and drains (D1/D2). Its Super Logic Level design ensures full enhancement at VGS = −2.5 V, enabling direct interface with 3.3 V microcontrollers without level-shifting.
The device supports synchronous rectification and bidirectional load switching via independent channel control. Avalanche rating (EAS = 44 mJ) and dv/dt immunity (−6 kV/µs) confirm suitability for inductive switching in unregulated power rails and hot-swap circuits where transient overvoltage and commutation stress are present.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | −20 V - supports 12 V rail systems with margin for transients and ripple |
| RDS(on) @ VGS = −4.5 V | 45 mΩ max - enables ≤0.12 W conduction loss at −5.7 A continuous current |
| Continuous Drain Current (TA = 25 °C) | −5.7 A - sufficient for 5–6 A point-of-load converters with standard PCB cooling |
| Avalanche Energy (EAS) | 44 mJ - withstands single-pulse inductive kickback in relay or solenoid drive |
| Gate Threshold Voltage (VGS(th)) | −0.6 to −1.2 V - ensures reliable turn-on with 2.5 V logic while minimizing shoot-through risk |
| Thermal Resistance RthJA | 62.5 K/W (6 cm² copper) - allows 2 W dissipation at ≤85 °C ambient with minimal heatsinking |
| Reverse Diode Forward Voltage (VSD) | −0.88 to −1.32 V - low-loss freewheeling path for buck converter synchronous rectification |
Pinout & Package
BSO207PNTMA1 uses an SO-8 surface-mount package with exposed drain pads for thermal performance. Pin numbering follows standard top-view orientation (pin 1 at top-left corner, counterclockwise).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D1) | Drain of Channel 1 | High-current output node; electrically tied to thermal pad for heat dissipation |
| 2 (G1) | Gate of Channel 1 | Logic-level input controlling Channel 1; requires <12 V |VGS| rating |
| 3 (S1) | Source of Channel 1 | Reference node for Channel 1; internally connected to S2 for common-source configuration |
| 4 (D2) | Drain of Channel 2 | Independent high-current output; isolated from D1 but thermally coupled |
| 5 (G2) | Gate of Channel 2 | Independent logic-level input enabling dual-channel control or redundancy |
| 6 (S2) | Source of Channel 2 | Common-source terminal with S1; enables parallel or complementary switching modes |
| 7 (D2) | Drain of Channel 2 (duplicate) | Second connection to D2 for enhanced current handling and thermal spreading |
| 8 (D1) | Drain of Channel 1 (duplicate) | Second connection to D1; improves solder joint reliability and reduces parasitic inductance |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-Channel Integration | Two matched MOSFETs in one SO-8 footprint reduce board area by ~40% vs discrete solutions |
| Super Logic Level Gate Drive | Full enhancement at −2.5 V VGS eliminates need for gate driver ICs in 3.3 V MCU systems |
| Avalanche-Rated Operation | Guaranteed 44 mJ single-pulse energy handling enables robust inductive load switching without snubbers |
| 150 °C Maximum Junction Temperature | Supports operation in sealed enclosures or high-ambient industrial environments without derating |
| dv/dt Immunity | Rated −6 kV/µs prevents false turn-on during fast voltage transients in motor drives or SMPS |
Applications
| Industrial DC-DC Converters | Hot-Swap Power Controllers |
|---|---|
Use Scenario: 12 V input to 5 V/3.3 V point-of-load regulation using synchronous buck topology. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET serves as synchronous rectifier (low-side) and high-side switch, controlled by PWM controller. Use Value: 45 mΩ RDS(on) at −4.5 V reduces conduction loss by >30% vs standard logic-level P-FETs, improving efficiency at 5 A load. | Use Scenario: Backplane power insertion in telecom line cards with inrush current limiting and fault isolation. IC Role / Device Role / Timing Role: One channel acts as main power switch; second provides redundant path or sequencing control during hot-plug events. Use Value: Avalanche rating and −6 kV/µs dv/dt immunity prevent latch-up during connector arcing and supply bounce. |
| Automotive Body Control Modules | Programmable Load Switches |
Use Scenario: Centralized power distribution for LED lighting, window motors, and HVAC actuators in 12 V vehicle systems. IC Role / Device Role / Timing Role: High-side load switch with integrated diagnostics; each channel independently controlled by CAN/LIN microcontroller. Use Value: −20 V VDS rating accommodates load-dump transients up to ISO 7637-2 Pulse 5a; 150 °C Tjmax ensures under-hood reliability. | Use Scenario: USB-C PD power path management or FPGA core voltage sequencing requiring dual independent switches. IC Role / Device Role / Timing Role: Two independent P-channel switches enable precise timing-controlled power-up/down of subsystems. Use Value: Matched threshold voltages (−0.6 to −1.2 V) ensure consistent turn-on behavior across channels, critical for sequencing accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-13 (Diodes Inc.) | −20 V, 52 mΩ RDS(on) @ −4.5 V, SO-8, but no avalanche rating or dv/dt spec | Lacks EAS and dv/dt immunity - unsuitable for inductive switching or harsh transients | Select only for low-stress, resistive-load applications where cost is primary |
| SIP32401DT-T1-GE3 (Vishay) | −20 V, 48 mΩ RDS(on) @ −4.5 V, SO-8, 150 °C rated, but only single-channel | Requires two devices for dual functionality - increases layout area and gate drive complexity | Choose when channel independence is critical and board space permits duplication |
Compared with DMC2038LSD-13 and SIP32401DT-T1-GE3, BSO207PNTMA1 uniquely combines dual-channel integration, avalanche ruggedness, and logic-level drive in one package-reducing component count and enhancing reliability in transient-prone industrial and automotive power stages.
Availability
BSO207PNTMA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, hot-swap controllers, and automotive body control modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for BSO207PNTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.
BSO207PNTMA1 belongs to the OptiMOS™-P small-signal transistor product line, engineered specifically for high-efficiency, space-constrained power switching in 12 V and 24 V systems where logic-level compatibility and ruggedness are essential.
FAQ
What is the maximum safe operating temperature for BSO207PNTMA1?
The BSO207PNTMA1 has a maximum junction temperature (Tj) of +150 °C and operates safely from −55 °C to +150 °C. Its thermal resistance RthJA is 62.5 K/W with 6 cm² copper cooling, allowing full −5.7 A current at up to 85 °C ambient. Derating begins above that ambient per the ID vs. TA curve on page 4 of the datasheet.
Can BSO207PNTMA1 be used in synchronous rectification mode?
Yes-its low RDS(on) (45 mΩ max at −4.5 V), fast switching (tr = 17–25 ns, tf = 49–65 ns), and integrated body diode (VSD = −0.88 to −1.32 V) make it suitable for synchronous rectification in buck converters. Independent gate control enables precise timing to avoid shoot-through, especially when paired with a dedicated gate driver.
Is the SO-8 package lead-free and RoHS-compliant?
Yes-BSO207PNTMA1 is manufactured in a lead-free, RoHS-compliant SO-8 package per Infineon's Q67042-S4068 ordering code. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 3 and is qualified for reflow soldering per IPC/JEDEC J-STD-020 standards.
Does BSO207PNTMA1 require external gate resistors for stability?
Gate resistors are recommended for EMI control and ringing suppression, especially in high-di/dt applications. The datasheet specifies RGS = 25 Ω for avalanche testing; typical designs use 10–47 Ω in series with each gate to dampen oscillation while maintaining <13.5 ns rise time. Layout-dependent parasitics may necessitate optimization.
BSO207PNTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5.7A
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 5.7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1013pF @ 15V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
BSO207PNTMA1 FAQ
1.How can I place an order for BSO207PNTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSO207PNTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSO207PNTMA1 reliable?
The price and inventory of BSO207PNTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO207PNTMA1 is usually 5 days.
3.What payment methods are accepted for BSO207PNTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO207PNTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSO207PNTMA1?
BSO207PNTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSO207PNTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSO207PNTMA1?
For technical support, including BSO207PNTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO207PNTMA1 requirements.
6.How does Aetrix verify that BSO207PNTMA1 is sourced from the original manufacturer or authorized distributors?
All BSO207PNTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO207PNTMA1 meets industry standards.
7.What is the process for return or replacement of BSO207PNTMA1?
All BSO207PNTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO207PNTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSO207PNTMA1 part is unused and in its original packaging.
Return procedure for BSO207PNTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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