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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies BSO211PHXUMA1

Name: BSO211PHXUMA1
Brand: Infineon Technologies
SKU: BSO211PHXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO211PHXUMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO211PHXUMA1.pdf

Description:: MOSFET 2P-CH 20V 4A 8DSO

Quantity:: RFQ Add To RFQ list

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Inventory:2,949

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Product details

Overview

BSO211PHXUMA1 from Infineon Technologies is a dual P-channel MOSFET in PG-DSO-8 package, rated for -20 V V_DS, 4.6 A continuous drain current at 4.5 V_GS, and 110 mΩ R_DS(on) at 2.5 V_GS; designed for high-efficiency load switching in automotive body electronics and industrial power management systems.

For engineers reviewing the BSO211PHXUMA1 datasheet, BSO211PHXUMA1 pinout, BSO211PHXUMA1 application, or BSO211PHXUMA1 equivalent, key selection criteria include logic-level gate drive compatibility (2.5 V threshold), dual-channel thermal coupling in SO8, and 150°C junction operation for under-hood automotive use.

Technical Context

This dual P-channel device integrates two matched enhancement-mode MOSFETs sharing a common source configuration in a single SO8 package. Its Super Logic Level gate design enables direct interfacing with 2.5 V and 3.3 V microcontrollers without level-shifting circuitry.

The device features low gate charge (Q_g = 8–10 nC) and fast switching (t_r = 13–20 ns, t_f = 27–41 ns), optimized for PWM-controlled DC-DC converters and reverse-polarity protection circuits where low conduction loss and controlled turn-on/turn-off timing are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - supports 12 V automotive rail with margin against transients
R_DS(on) max @ 2.5 V_GS	110 mΩ - enables efficient 3.3 V MCU-driven load switching below 3 A
I_D continuous @ 4.5 V_GS	-4.6 A - sustains full-rated current at 70°C ambient with minimal heatsinking
Q_g total	8–10 nC - reduces gate driver power loss and enables >100 kHz PWM operation
T_j max	150°C - qualified for under-dash and engine compartment applications
E_AS	28 mJ - withstands inductive energy during unclamped inductive switching events
C_iss	730–1095 pF - determines gate drive strength requirement for stable switching

Pinout & Package

Package: PG-DSO-8 (8-pin exposed-pad SOIC), RoHS-compliant, halogen-free, with integrated thermal pad for enhanced heat dissipation to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source 1 / Source 2	Common-source connection points for each channel; tied internally in dual-source layout
5, 6, 7, 8	Drain 1 / Drain 2	Independent drain terminals enabling separate load connections per channel
Exposed Pad	Thermal / Electrical Drain	Electrically connected to drains; must be soldered to large copper area for thermal performance
G1, G2	Gate 1 / Gate 2	Separate gate inputs allow independent control of each P-MOSFET channel

Key Features

Feature	Design Value
Super Logic Level gate	Guaranteed turn-on at 2.5 V_GS, compatible with low-voltage MCUs and FPGAs
Dual-channel integration	Two matched P-MOSFETs in one SO8 reduce board space and interconnect inverter/switching pairs
150°C operation	Validated for extended temperature environments without derating penalties up to T_A = 85°C
Low Q_gd/Q_gs ratio	Q_gd = 3–4 nC vs Q_gs = 1–2 nC - improves switching controllability and reduces Miller-induced shoot-through risk
Robust avalanche rating	E_AS = 28 mJ - eliminates need for external snubbers in inductive load switching

Applications

Automotive Body Control Module (BCM)

Industrial Dual-Channel Load Switch

Use Scenario: Controlling door lock actuators and interior lighting via 3.3 V CAN/LIN microcontroller outputs.

IC Role / Device Role / Timing Role: Dual high-side switch providing independent ON/OFF control and reverse-polarity protection.

Use Value: Eliminates discrete level shifters and reduces component count by integrating two logic-level P-MOSFETs with shared thermal path.

Use Scenario: Power sequencing of dual-rail sensors (e.g., 5 V analog + 3.3 V digital) in factory automation I/O modules.

IC Role / Device Role / Timing Role: Synchronized high-side power switch with matched R_DS(on) and thermal tracking between channels.

Use Value: Ensures consistent startup timing and voltage ramp rates across rails without cross-talk or mismatch-induced sequencing errors.

USB-C Power Delivery Protection

Redundant Power OR-ing Circuit

Use Scenario: Reverse-current blocking and overvoltage clamping on USB-C VBUS lines in portable docking stations.

IC Role / Device Role / Timing Role: Dual P-MOSFET configured as back-to-back switches for bidirectional fault isolation.

Use Value: Achieves <1.4 V forward drop at 4.6 A while maintaining sub-100 ns fault response via low Q_g and fast t_f.

Use Scenario: OR-ing two 12 V backup supplies in telecom power shelves to prevent backfeed and ensure seamless switchover.

IC Role / Device Role / Timing Role: High-side ideal diode controller interface with matched channel characteristics for balanced current sharing.

Use Value: Enables <1% current imbalance between sources using internal matching and thermally coupled die structure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038LSD-13	Single-channel, 30 V rating, 5.8 A I_D, higher R_DS(on) (120 mΩ @ 2.5 V)	Requires two devices for dual functionality; lacks thermal coupling	Preferred when higher voltage margin is needed and board space allows duplication
SI7862DN-T1-GE3	Dual P-channel, 20 V, but 2.8 A I_D and 150 mΩ R_DS(on) @ 2.5 V	Lower current capability limits use in >3 A loads; slower t_f (55 ns)	Suitable for cost-sensitive consumer applications where peak current is ≤2.5 A

Compared with DMC2038LSD-13 and SI7862DN-T1-GE3, BSO211PHXUMA1 delivers superior current density, tighter R_DS(on) matching, and faster switching-making it optimal for thermally constrained automotive and industrial dual-load control where channel synchronization matters.

Availability

BSO211PHXUMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial power sequencing, USB-C protection circuits, and redundant OR-ing applications requiring stable component supply and long-term lifecycle support.

Supply support for BSO211PHXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards.

This device belongs to the OptiMOS™ P-Channel Power Transistor product line, engineered specifically for high-reliability, logic-level-driven load switching in harsh-environment automotive and industrial systems.

FAQ

What is the maximum continuous drain current at 85°C ambient?

At T_A = 85°C and V_GS = 4.5 V, the continuous drain current is -3.2 A per channel, based on thermal resistance R_thJA = 150 K/W (steady state, minimal footprint) and 150°C maximum junction temperature. Derating follows linear interpolation between 25°C and 70°C data points in the datasheet.

Does BSO211PHXUMA1 support parallel operation of both channels?

Yes-the two P-MOSFETs share thermal coupling via the common exposed pad and exhibit tightly matched R_DS(on) and threshold voltage (V_GS(th) = -0.6 to -1.2 V). Parallel use is supported for higher current, provided gate drive strength accounts for doubled total gate charge (Q_g ≈ 16–20 nC).

Is the exposed thermal pad electrically isolated?

No-the exposed pad is electrically connected to the drain terminals (pins 5–8) and must be soldered to a PCB copper pour tied to the system drain net. It serves both thermal and electrical functions; floating or grounded pads will compromise performance and reliability.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 8–12 nC under conditions V_R = 10 V, I_F = I_D = -4.6 A, and di/dt = 100 A/µs at T_j = 25°C. This value reflects fast recovery behavior suitable for synchronous rectification and flyback snubberless designs.

BSO211PHXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 4A

Rds On (Max) @ Id, Vgs:: 67mOhm @ 4.6A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 1095pF @ 15V

Power - Max:: 1.6W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO211PHXUMA1 FAQ

1.How can I place an order for BSO211PHXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO211PHXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO211PHXUMA1 reliable?

The price and inventory of BSO211PHXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO211PHXUMA1 is usually 5 days.

3.What payment methods are accepted for BSO211PHXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO211PHXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO211PHXUMA1?

BSO211PHXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO211PHXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO211PHXUMA1?

For technical support, including BSO211PHXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO211PHXUMA1 requirements.

6.How does Aetrix verify that BSO211PHXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSO211PHXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO211PHXUMA1 meets industry standards.

7.What is the process for return or replacement of BSO211PHXUMA1?

All BSO211PHXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO211PHXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO211PHXUMA1 part is unused and in its original packaging.

Return procedure for BSO211PHXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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