Infineon Technologies BSO215C

Overview

BSO215C from Infineon Technologies is a dual-channel SIPMOS™ small-signal MOSFET in SO-8 package, integrating one N-channel and one P-channel enhancement-mode logic-level transistor. It delivers ±3.7 A continuous drain current, 0.05 Ω (N) / 0.06 Ω (P) R_DS(on) at V_GS = ±10 V, and ±20 V V_DS, enabling bidirectional load switching in compact DC-DC converters and half-bridge motor drivers.

For engineers reviewing the BSO215C datasheet, BSO215C pinout, BSO215C application, or BSO215C equivalent, this dual-channel logic-level MOSFET supports fast switching (t_r/t_f < 236 ns), avalanche-rated operation (E_AS = 26 mJ / 68 mJ), and robust dv/dt immunity (6 kV/µs), critical for high-reliability power stage design in industrial control and automotive body electronics.

Technical Context

The BSO215C implements complementary N- and P-channel silicon-based MOSFETs on a single SO-8 die, sharing common source terminals per channel and optimized for synchronous rectification and push-pull output stages. Its logic-level gate threshold (V_GS(th) = +1.2 to +2.0 V / –1.0 to –2.0 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.

Thermal performance is defined by R_thJA = 62.5 K/W (N-channel) and 100 K/W (P-channel) on 6 cm² PCB copper, with transient thermal impedance Z_thJC supporting pulsed operation up to 14.8 A. The integrated body diodes exhibit t_rr = 46.5–205 ns and Q_rr = 18.4–120 µC, suitable for moderate-frequency freewheeling.

Key Specifications

Pinout & Package

BSO215C uses an SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows standard SO-8 outline (pin 1 = N-Channel Gate, pin 2 = N-Channel Source, pin 3 = N-Channel Drain, pin 4 = P-Channel Drain, pin 5 = P-Channel Source, pin 6 = P-Channel Gate, pins 7–8 = common drain connection).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with BSO215C, the Siemens BSO215 offers identical performance but limited long-term availability, while the NTMFS4C02N sacrifices integration and ease of use for lower R_DS(on) in N-only configurations-making BSO215C optimal for space-constrained dual-polarity switching where simplicity and reliability outweigh marginal on-resistance gains.

Availability

BSO215C is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and USB-C power delivery load switching requiring stable component supply and long-lifecycle support.

Supply support for BSO215C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The SIPMOS™ small-signal transistor product line targets high-reliability, logic-level-driven power switches for space-constrained applications including motor drives, DC-DC converters, and automotive ECUs.

FAQ

Is BSO215C suitable for 3.3 V microcontroller gate drive?

Yes. The N-channel V_GS(th) range is +1.2 V to +2.0 V and P-channel is –1.0 V to –2.0 V, ensuring reliable turn-on with 3.3 V logic. At V_GS = +4.5 V / –4.5 V, R_DS(on) remains low (0.1 Ω), confirming strong enhancement-mode behavior under 3.3 V drive conditions.

What is the maximum safe operating temperature for continuous operation?

The BSO215C has a junction temperature limit of +150 °C and operates continuously from –55 °C to +150 °C. Derated continuous current drops to ±3.0 A at T_A = 70 °C per channel, based on R_thJA = 62.5 K/W (N) and 100 K/W (P) on standard FR4 PCB with 6 cm² copper.

Can BSO215C replace discrete N- and P-channel MOSFETs in an H-bridge?

Yes-it integrates matched N- and P-channel devices in one SO-8 package with shared drain thermal pad, reducing layout area by >40% versus two discrete SO-8s. Pinout supports direct replacement in half-bridge configurations, though gate drive sequencing must respect complementary logic polarity.

Does BSO215C include ESD protection on gate terminals?

No explicit ESD protection diodes are specified in the datasheet. Gate-source voltage is rated ±20 V, and IGSS is ≤100 nA at ±20 V, indicating standard MOSFET gate oxide robustness. External 10 kΩ series resistors and TVS clamping are recommended for board-level ESD immunity per IEC 61000-4-2 Level 4.