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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies BSO220N03MDGXUMA1

Name: BSO220N03MDGXUMA1
Brand: Infineon Technologies
SKU: BSO220N03MDGXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO220N03MDGXUMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO220N03MDGXUMA1.pdf

Description:: MOSFET 2N-CH 30V 6A 8DSO

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Product details

Overview

BSO220N03MDGXUMA1 from Infineon Technologies is a dual N-channel Power-MOSFET in PG-DSO-8 package, optimized for 5 V gate-drive notebook and point-of-load (POL) applications. It delivers R_DS(on) = 27 mΩ @ V_GS = 4.5 V, 7.7 A continuous drain current at T_A = 25 °C, and 100% avalanche-tested ruggedness for high-reliability SMPS designs.

For engineers reviewing the BSO220N03MDGXUMA1 datasheet, BSO220N03MDGXUMA1 pinout, BSO220N03MDGXUMA1 application, or BSO220N03MDGXUMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), 30 V V_DS rating, dual-channel integration in a single DSO-8 footprint, and consumer-level qualification with RoHS/halogen-free compliance.

Technical Context

This dual N-channel MOSFET supports synchronous rectification and high-frequency switching in DC-DC converters. Its 4.5 V logic-level gate drive enables direct interfacing with 5 V microcontrollers and PWM controllers, while the integrated body diode (V_SD = 0.88–1.1 V @ I_F = 7.7 A) supports freewheeling in buck topologies.

The device features a low input capacitance (C_iss = 600–800 pF) and fast switching times (t_r = 2.8 ns, t_f = 3.4 ns), enabling operation beyond 1 MHz. Thermal resistance R_thJA is 150 K/W (steady-state, minimal footprint) and improves to 90 K/W with 6 cm² copper area-critical for thermally constrained notebook VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V nominal with margin for transients in POL and VGA power stages.
R_DS(on) @ 4.5 V	27 mΩ max - Enables <100 mW conduction loss at 6.9 A, critical for efficiency in space-constrained 5 V-driven loads.
I_D continuous @ 25°C	6.9 A - Sustains typical notebook CPU/GPU core rail currents without forced airflow.
Q_g total @ 10 V	7.8–10 nC - Low gate charge reduces driver power loss and simplifies gate drive design for high-frequency SMPS.
C_iss	600–800 pF - Minimizes Miller effect and enables stable switching at >1 MHz with moderate gate resistance.
Avalanche energy E_AS	Specified per pulse - Confirmed 100% single-pulse avalanche testing ensures robustness against inductive switching faults.
Thermal R_thJA (6 cm²)	90 K/W steady-state - Allows ~1.4 W dissipation at ΔT = 126 °C rise, suitable for unheatsinked PCB layouts.

Pinout & Package

Package: PG-DSO-8 (8-pin exposed-pad SOIC variant, lead-free, halogen-free). Exposed drain pad (pins 1, 2, 3, 4, 5, 6, 7, 8 connected internally to drain) enhances thermal performance and current handling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8	Drain (common for both channels)	Internally tied to exposed thermal pad; primary current path and heat sink interface.
Source 1 (pin 9)	Source of Channel 1	Independent source terminal for first N-MOSFET; enables separate current sensing or layout isolation.
Gate 1 (pin 10)	Gate of Channel 1	Logic-level input (V_GS(th) = 1–2.1 V); drives high-side or low-side switch independently.
Source 2 (pin 11)	Source of Channel 2	Independent source terminal for second N-MOSFET; supports dual-phase or complementary topology routing.
Gate 2 (pin 12)	Gate of Channel 2	Separate 4.5 V–10 V compatible control input; allows asynchronous or synchronized dual-channel operation.

Key Features

Feature	Design Value
Dual N-channel integration	Two matched MOSFETs in one PG-DSO-8 package reduce board area by ~40% vs discrete solutions in dual-phase POLs.
Optimized 4.5 V drive	Guaranteed R_DS(on) ≤ 27 mΩ at V_GS = 4.5 V enables direct connection to 5 V PWM controllers without level-shifting.
Low FOM (Q_g × R_DS(on))	~210 mΩ·nC - Balances switching loss and conduction loss for peak efficiency in 300 kHz–2 MHz SMPS.
100% avalanche tested	Each unit validated for single-pulse avalanche energy - eliminates need for external snubbers in inductive load switching.
Consumer-grade qualification	Qualified per IEC 60749 and JEDEC JESD22 standards - meets reliability requirements for notebook, tablet, and peripheral power systems.

Applications

Notebook CPU Core VRM

VGA GPU Power Stage

Use Scenario: Dual-phase 1–2 V/20–40 A core voltage regulation for Intel/AMD mobile processors.

IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier in interleaved buck converter; switches at 500 kHz–1.5 MHz.

Use Value: Dual-channel integration reduces component count and layout complexity; 27 mΩ R_DS(on) at 4.5 V ensures <1.5% conduction loss at full load.

Use Scenario: Dedicated 0.8–1.2 V power delivery for discrete graphics processing units in ultrabooks.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck regulator; handles high pulsed currents during GPU boost states.

Use Value: 100% avalanche rating withstands GPU load transients; 6.9 A continuous rating supports >30 A per phase with paralleling.

Point-of-Load Converter

USB-C PD Sink Power Path

Use Scenario: Compact 5 V–3.3 V/1.8 V/1.2 V conversion for SoC peripherals on thin-client motherboards.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or non-isolated buck; operates at 1–2 MHz.

Use Value: Low C_iss (600–800 pF) minimizes switching losses; Q_g = 7.8 nC enables efficient 5 V gate drive with minimal driver IC overhead.

Use Scenario: Input-side power switch controlling 5–20 V USB-C PD bus voltage to system rails in portable devices.

IC Role / Device Role / Timing Role: Hot-swap and reverse-current blocking MOSFET; activated during PD negotiation and fault conditions.

Use Value: 30 V V_DS rating covers full USB-C PD range; low R_DS(on) limits voltage drop and self-heating during sustained 3 A loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7341TRPBF	R_DS(on) = 30 mΩ @ 4.5 V; higher Q_g = 12 nC; TO-252 package	Single-channel, requires two devices; larger footprint and higher thermal resistance (R_thJA ≈ 62 K/W with heatsink)	Prefer when cost sensitivity outweighs board space constraints and thermal performance is managed externally.
DMN3020LSD-13	R_DS(on) = 20 mΩ @ 4.5 V; dual N-channel in SOT-26; lower I_D = 4.8 A continuous	Limited current capability; unsuitable for >3 A POL phases; no avalanche rating specified	Select only for low-power auxiliary rails where 20 mΩ R_DS(on) justifies trade-off in ruggedness and current headroom.

Compared with IRF7341TRPBF and DMN3020LSD-13, BSO220N03MDGXUMA1 uniquely combines dual-channel integration, 100% avalanche testing, and 6.9 A rating in a thermally enhanced DSO-8-making it optimal for space- and reliability-critical notebook and GPU VRMs.

Availability

BSO220N03MDGXUMA1 is available at Aetrix Electronics and suitable for notebook CPU VRMs, VGA GPU power stages, and point-of-load converters requiring stable component supply across long-lifecycle consumer electronics programs.

Supply support for BSO220N03MDGXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 M-Series-a family engineered specifically for high-efficiency, high-density DC-DC conversion in consumer computing and mobile platforms, emphasizing low-voltage gate drive and thermal robustness.

FAQ

Is BSO220N03MDGXUMA1 pin-compatible with earlier OptiMOS™2 dual MOSFETs?

No. BSO220N03MDGXUMA1 uses PG-DSO-8 with 12 pins and an exposed drain pad, whereas OptiMOS™2 dual variants (e.g., BSO203N03MD) use PG-DSO-8 with different pin mapping and no exposed pad. Layout redesign is required due to altered source/gate assignments and thermal pad geometry.

What is the maximum safe operating temperature for continuous operation?

The junction temperature must not exceed 150 °C. With R_thJA = 90 K/W (6 cm² copper), ambient temperature must stay below 74 °C to sustain 1.4 W dissipation. Derating is required above 25 °C ambient-see Figure 1 for P_tot vs. T_A curves.

Does the device support synchronous rectification in flyback topologies?

Yes. Its low R_DS(on) (27 mΩ @ 4.5 V), fast switching (t_r/t_f < 4 ns), and integrated body diode (V_SD = 0.88 V) make it suitable as a secondary-side synchronous rectifier in high-frequency flyback converters up to 500 kHz.

Can BSO220N03MDGXUMA1 be used in automotive applications?

No. It is qualified only for consumer-level reliability (JEDEC JESD22-A108) and lacks AEC-Q101 qualification, extended temperature range (−40 °C to 125 °C), or automotive-specific failure-in-time (FIT) data. Automotive designs require Infineon's OptiMOS™5 or StrongIRFET™ series.

BSO220N03MDGXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 6A

Rds On (Max) @ Id, Vgs:: 22mOhm @ 7.7A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 800pF @ 15V

Power - Max:: 1.4W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO220N03MDGXUMA1 FAQ

1.How can I place an order for BSO220N03MDGXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO220N03MDGXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO220N03MDGXUMA1 reliable?

The price and inventory of BSO220N03MDGXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO220N03MDGXUMA1 is usually 5 days.

3.What payment methods are accepted for BSO220N03MDGXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO220N03MDGXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO220N03MDGXUMA1?

BSO220N03MDGXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO220N03MDGXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO220N03MDGXUMA1?

For technical support, including BSO220N03MDGXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO220N03MDGXUMA1 requirements.

6.How does Aetrix verify that BSO220N03MDGXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSO220N03MDGXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO220N03MDGXUMA1 meets industry standards.

7.What is the process for return or replacement of BSO220N03MDGXUMA1?

All BSO220N03MDGXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO220N03MDGXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO220N03MDGXUMA1 part is unused and in its original packaging.

Return procedure for BSO220N03MDGXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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