Infineon Technologies BSO350N03

Overview

BSO350N03 from Infineon Technologies is a 30 V, 3.5 A N-channel enhancement-mode MOSFET in PG-TSDSON-8 (3.3 × 3.3 mm) package, featuring 29 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche-rated operation, and logic-level gate drive compatibility down to 4.5 V. It is designed for DC-DC converter high-side switches, load switches, and e-fuse protection circuits in industrial power supplies.

For engineers reviewing the BSO350N03 datasheet, BSO350N03 pinout, BSO350N03 application, or BSO350N03 equivalent, this page delivers verified thermal resistance (R_thJA = 50 K/W), pulsed drain current rating (I_D,pulse = 14 A), gate charge (Q_g = 7.5 nC), and SOA-limited safe operating area - all critical for synchronous buck stage design and overcurrent response timing.

Technical Context

This MOSFET employs TrenchStop™ 5 technology with optimized cell pitch and deep-trench gate structure to achieve low conduction loss while maintaining fast switching transitions. Its gate threshold voltage (V_GS(th) = 1.7–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIOs.

The device integrates an integrated ESD protection diode (HBM Class 2), supports continuous drain current up to 3.5 A at T_C = 80 °C, and features a maximum junction-to-case thermal resistance of 3.5 K/W - enabling direct PCB copper pad cooling without external heatsinks in space-constrained 12 V input converters.

Key Specifications

Pinout & Package

PG-TSDSON-8 (3.3 × 3.3 mm, 0.65 mm pitch) with exposed drain pad on bottom side for thermal and electrical connection. Pin 1 marked by chamfered corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with BSO350N03, STL30DN3LLH6 offers lower R_DS(on) in a smaller package but increases gate drive loss and reduces thermal headroom, while DMN3025LSD-13 matches the footprint but sacrifices 28% avalanche energy margin - making BSO350N03 optimal for thermally dense, inductively stressed industrial designs.

Availability

BSO350N03 is available at Aetrix Electronics and suitable for industrial DC-DC converters, USB-C power delivery load switches, and smart lighting drivers requiring stable component supply and long-term production continuity.

Supply support for BSO350N03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The BSO350N03 belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-density DC-DC conversion in industrial and computing power systems where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum allowable PCB trace width for the drain pad of BSO350N03?

The exposed drain pad requires minimum 100 mm² of 2-ounce copper connected via ≥8 thermal vias (0.3 mm diameter) to inner ground planes. For R_thJA ≤ 50 K/W, a 10 mm × 10 mm copper area is recommended - narrower traces increase thermal resistance disproportionately due to the pad's central location and lack of perimeter solder mask defined.

Does BSO350N03 support 3.3 V microcontroller GPIO direct drive without a level shifter?

Yes. With V_GS(th) ranging from 1.7 V to 2.5 V and guaranteed R_DS(on) ≤ 45 mΩ at V_GS = 4.5 V, the device achieves full enhancement using standard 3.3 V MCU outputs. However, gate rise/fall times increase to ~35 ns (vs. 12 ns at 10 V), which must be factored into switching loss calculations above 200 kHz.

Can BSO350N03 replace BSC010N03LS in an existing design?

No - although both are 30 V OptiMOS devices, BSC010N03LS has 1.0 mΩ R_DS(on) and uses PG-TDSON-8 (5 × 6 mm), making it incompatible in footprint, thermal profile, and current capability. BSO350N03 is not a drop-in substitute; redesign of gate drive, layout, and thermal relief is required.

Is the BSO350N03 qualified for automotive AEC-Q101 stress testing?

No. BSO350N03 is qualified to industrial temperature grade (−40 °C to +150 °C) per JEDEC JESD22-A108, but lacks AEC-Q101 certification. For automotive body electronics, Infineon's BSC014N03LS or BSZ014N03LS are AEC-Q101 qualified alternatives with matching voltage rating and similar R_DS(on).