Infineon Technologies BSO4804T

Overview

BSO4804T from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in PG-DSO-8-7 package, rated for 30 V V_DS, 8 A continuous drain current at 25°C, and 20 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and optimized gate charge × R_DS(on) figure-of-merit (150 mΩ·nC), making it suitable for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the BSO4804T datasheet, BSO4804T pinout, BSO4804T application, or BSO4804T equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), thermal resistance (R_thJA = 62.5 K/W on 6 cm² copper), reverse diode performance (V_SD = 0.9–1.3 V @ 1.8 A), and fast switching timing (t_r = 27–40 ns, t_f = 24–36 ns).

Technical Context

This MOSFET operates in enhancement mode with a threshold voltage range of 1.2–2.0 V, enabling direct interfacing with 3.3 V and 5 V microcontroller GPIOs without level-shifting. Its low R_DS(on) and optimized gate charge (Q_g = 13.5–17 nC) reduce conduction and switching losses simultaneously.

The device integrates an avalanche-rated body diode with t_rr = 24–30 ns and Q_rr = 16–20 nC, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design is supported by validated R_thJS = 45 K/W and R_thJA = 62.5 K/W under defined PCB layout conditions.

Key Specifications

Pinout & Package

BSO4804T uses the PG-DSO-8-7 surface-mount package (8-pin SOIC variant with exposed drain pad), optimized for thermal dissipation via PCB copper area. Pin numbering follows standard SOIC-8 orientation with pins 1–4 on left side and 5–8 on right side, viewed from top with marking dot at pin 1 corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRF7470PBF and STL220N3LLH6, BSO4804T offers optimal balance of logic-level drivability, thermal performance via exposed pad, and 30 V rating-making it ideal for space-constrained 24 V systems where gate drive simplicity and reliability under transient stress are critical.

Availability

BSO4804T is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, USB-C power delivery modules, and hot-swap controllers requiring stable component supply across production lifecycles.

Supply support for BSO4804T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

The OptiMOS™ product line delivers high-performance, logic-level power MOSFETs optimized for efficiency-critical applications including server VRMs, industrial motor drives, and battery-powered systems.

FAQ

What is the maximum safe gate-source voltage for BSO4804T?

The absolute maximum V_GS is ±20 V per datasheet. Operation above ±12 V provides no benefit and risks accelerated gate oxide degradation. For reliable long-term use, keep V_GS between 4.5 V and 10 V-sufficient to fully enhance the channel while preserving gate integrity over 10⁵+ cycles.

Can BSO4804T be used in parallel configurations?

Yes, but only with careful layout and gate drive matching. Its positive temperature coefficient for R_DS(on) (increasing with T_j) enables inherent current sharing. Use identical gate resistors, symmetrical PCB traces, and shared thermal mass to avoid imbalance. Derate total current by 15% versus sum of individual ratings.

Does the body diode support continuous reverse conduction?

The integrated body diode is rated for 1.8 A continuous forward current at 25°C ambient, with pulsed capability up to 32 A. Its V_SD = 0.9–1.3 V and t_rr = 24–30 ns make it suitable for non-synchronous freewheeling, but not for high-frequency synchronous rectification without external Schottky assist.

What PCB layout practices maximize thermal performance?

To achieve the specified R_thJA = 62.5 K/W, solder the exposed drain pad (pins 5–8) to ≥6 cm² of 70 µm thick copper on inner or outer layer, using ≥9 thermal vias (0.3 mm diameter) connecting to internal ground planes. Avoid placing components or traces directly over the pad area to ensure unimpeded heat spreading.