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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies BSO612CVGXUMA1

Name: BSO612CVGXUMA1
Brand: Infineon Technologies
SKU: BSO612CVGXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO612CVGXUMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: -

Datasheet:: BSO612CVGXUMA1.pdf

Description:: MOSFET N/P-CH 8-SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSO612CVGXUMA1 from Infineon Technologies is a dual-channel SIPMOS™ small-signal MOSFET in a PG-DSO-8 package, integrating one N-channel (60 V, 3 A, R_DS(on) = 0.09 Ω @ V_GS = 10 V) and one P-channel (−60 V, −2 A, R_DS(on) = 0.22 Ω @ V_GS = −10 V) enhancement-mode transistor. It supports bidirectional switching in half-bridge and H-bridge motor control stages, load switching, and power management in compact industrial and automotive body electronics.

For engineers reviewing the BSO612CVGXUMA1 datasheet, BSO612CVGXUMA1 pinout, BSO612CVGXUMA1 application, or BSO612CVGXUMA1 equivalent, this dual-channel MOSFET offers verified avalanche energy (47 mJ N-ch / 70 mJ P-ch), ±20 V gate-source rating, RoHS-compliant Pb-free plating, and thermal resistance (R_thJS = 40 K/W) optimized for SMD PCB mounting with minimal footprint cooling.

Technical Context

This device implements complementary N- and P-channel silicon-based MOSFETs on a single die in an 8-pin DSO package, enabling synchronous half-bridge operation without external level-shifting. Its gate threshold voltages (V_GS(th) = 2.1–4 V N-ch / −2.1 to −4 V P-ch) support direct microcontroller drive at 3.3 V and 5 V logic levels.

The integrated body diodes exhibit fast reverse recovery (t_rr = 55–85 ns) and low forward voltage (V_SD = 0.9–1.2 V), supporting efficient freewheeling in DC-DC converters and brushed DC motor drives. Dynamic parameters-including Q_g = 10.3–15.5 nC and C_iss = 275–400 pF-are specified across both channels under matched test conditions (V_DD = ±48 V, I_D = ±3 A / ±2 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	60 V (N-ch), −60 V (P-ch): Supports 48 V rail systems with 20 % margin against transients.
R_DS(on)	0.09 Ω @ 10 V (N), 0.22 Ω @ −10 V (P): Enables <1 W conduction loss at 3 A/−2 A continuous current.
I_D Continuous	3 A (N), −2 A (P) at T_A = 25 °C: Rated for sustained load switching in space-constrained PCB layouts.
E_AS	47 mJ (N), 70 mJ (P): Confirmed single-pulse avalanche capability for inductive load turn-off protection.
Q_g	10.3 nC (N), 15.5 nC (P): Determines gate driver strength requirement for <25 ns turn-on delay at 33 Ω R_G.
t_r/t_f	35/30 ns (N), 55/45 ns (P): Enables >1 MHz switching in synchronous buck or half-bridge topologies.
V_GS(th)	2.1–4 V (N), −2.1 to −4 V (P): Ensures reliable turn-on with standard logic-level MCU GPIOs.

Pinout & Package

BSO612CVGXUMA1 uses the PG-DSO-8 (8-pin SOIC-style) surface-mount package with exposed drain pad (Pin 4) for thermal dissipation. The package complies with JEDEC MS-012 and supports reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1	N-channel source	Reference node for N-ch gate drive; tied to low-side return path in half-bridge.
2	N-channel gate	Control input for N-ch; requires 10 V for full enhancement; compatible with 3.3 V logic via threshold margin.
3	P-channel drain	Shared drain node with N-channel drain (Pin 8); forms common switching node in bridge configurations.
4	Thermal pad / N-ch & P-ch drain	Electrically connected to both drains; must be soldered to PCB copper pour for R_thJS = 40 K/W performance.
5	P-channel source	Reference node for P-ch gate drive; typically connected to high-side supply rail.
6	P-channel gate	Control input for P-ch; driven negative relative to source; −10 V ensures R_DS(on) ≤ 0.22 Ω.
7	N-channel drain	Electrically tied to Pin 3 and Pin 4; forms output node in high-side/N-ch low-side configurations.
8	P-channel drain	Electrically tied to Pins 3 and 4; enables shared-drain dual-FET topology with single thermal path.

Key Features

Feature	Design Value
Dual complementary channels	Single-package integration of matched N- and P-MOSFETs eliminates layout skew and reduces board area by >40 % vs discrete pairs.
Avalanche-rated operation	Guaranteed single-pulse E_AS up to 70 mJ (P-ch) enables robustness against inductive switching spikes without external snubbers.
Low gate charge asymmetry	Q_g ratio (N:P) ≈ 1:1.5 matches typical driver current capability, simplifying gate driver selection for balanced rise/fall times.
RoHS-compliant Pb-free plating	Meets EU Directive 2011/65/EU and IPC-1752A; qualified for lead-free reflow (peak 260 °C, 10 s).
Fast body diode recovery	t_rr = 55 ns (N), 85 ns (P) minimizes reverse recovery loss in synchronous rectification and PWM motor control.

Applications

Brushed DC Motor Control

USB-C Power Delivery Switching

Use Scenario: Bidirectional 24 V brushed motor drive in automotive seat adjusters and HVAC actuators.

IC Role / Device Role / Timing Role: Dual-channel MOSFET serves as half-bridge power stage; N-ch switches low-side, P-ch switches high-side with no bootstrap needed.

Use Value: Eliminates external high-side driver IC; R_DS(on) ≤ 0.22 Ω limits conduction loss to <0.9 W at −2 A, enabling thermally constrained modules.

Use Scenario: Load switch for 20 V/5 A USB-C PD power path in portable docking stations.

IC Role / Device Role / Timing Role: Acts as bidirectional overvoltage-protected power switch; P-ch handles upstream (source) side, N-ch handles downstream (sink) side.

Use Value: Integrated avalanche rating withstands 100 V transient surges per IEC 61000-4-5; ±20 V V_GS supports robust gate control during hot-plug events.

Industrial PLC I/O Modules

LED Driver Dimming Stage

Use Scenario: Solid-state relay replacement in 24 V DC digital output modules with diagnostic feedback.

IC Role / Device Role / Timing Role: Configured as high-side switch (P-ch) with current-sense resistor on N-ch source leg for real-time load monitoring.

Use Value: Low I_DSS (≤10 µA) ensures <100 µA leakage during off-state, meeting SIL-2 functional safety standby current requirements.

Use Scenario: PWM dimming FET in constant-current LED drivers for architectural lighting (24–48 V bus).

IC Role / Device Role / Timing Role: N-ch operates as low-side PWM switch; P-ch provides reverse polarity protection on input rail.

Use Value: t_f ≤ 45 ns enables clean 5 kHz–20 kHz PWM edges, eliminating visible LED flicker and reducing EMI filter size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMC2038LVT-7	N/P pair in TSOT-23-6; lower R_DS(on) (0.075 Ω N / 0.15 Ω P) but rated only to 20 V; 0.5 W P_tot.	Restricted to ≤20 V logic-level loads; unsuitable for 48 V industrial or automotive rails.	Select when board space is critical and voltage ≤20 V; avoid for 48 V systems requiring avalanche ruggedness.
SI6926DQ-T1-GE3	SO-8 dual N-ch only; no P-ch; R_DS(on) = 0.035 Ω @ 10 V; higher I_D = 6.5 A; no integrated body diode rating.	Requires external high-side driver or charge pump; lacks complementary switching capability.	Choose only for low-side parallel switching; not a functional substitute for half-bridge or bidirectional control.

Compared with DMC2038LVT-7 and SI6926DQ-T1-GE3, BSO612CVGXUMA1 uniquely delivers 60 V complementary switching, verified avalanche energy, and shared-drain thermal design-making it the only option among the three qualified for 48 V automotive body control modules with functional safety constraints.

Availability

BSO612CVGXUMA1 is available at Aetrix Electronics and suitable for brushed DC motor control, USB-C power delivery switching, and industrial PLC I/O modules requiring stable component supply across extended temperature ranges (−55 °C to +150 °C).

Supply support for BSO612CVGXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSO612CVGXUMA1 belongs to the SIPMOS™ Small-Signal Transistor product line, engineered for high-reliability, space-constrained power switching in automotive body electronics and industrial automation where complementary channel integration and avalanche ruggedness are mandatory.

FAQ

Is BSO612CVGXUMA1 pin-compatible with earlier BSO612 variants?

Yes-BSO612CVGXUMA1 maintains identical PG-DSO-8 pinout, marking ("612CV"), and thermal pad configuration as BSO612CV and BSO612CVXUMA1. Electrical specifications including R_DS(on), V_GS(th), and E_AS are unchanged per Rev. 2.2 datasheet; only tape-and-reel packaging differs (GXUMA1 denotes 1500-unit reel).

Can the N- and P-channel be operated simultaneously in linear mode?

No-BSO612CVGXUMA1 is characterized and qualified only for switching operation. Its Safe Operating Area (SOA) curves on Page 6 specify pulsed DC operation only; linear (ohmic) region use risks thermal runaway due to lack of SOA derating data and unvalidated channel interaction under analog bias.

What is the maximum allowable gate resistor for 100 kHz PWM operation?

With Q_g = 10.3 nC (N) and 15.5 nC (P), a 10 Ω gate resistor yields ~100 ns total gate charge time-well within 5 µs half-period at 100 kHz. For robust noise immunity and <25 ns t_d(on), Infineon recommends R_G ≤ 33 Ω (as tested in datasheet) with gate driver peak current ≥ ±200 mA.

Does the thermal pad (Pin 4) require electrical isolation from PCB ground?

No-Pin 4 is electrically connected to both drain terminals and must be soldered directly to a common drain copper pour. Isolation would violate the R_thJS = 40 K/W specification and cause junction temperature to exceed 150 °C at rated P_tot = 2 W; the pad is not ground-referenced but drain-referenced.

BSO612CVGXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: -

Configuration:: -

FET Feature:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Input Capacitance (Ciss) (Max) @ Vds:: -

Power - Max:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

BSO612CVGXUMA1 FAQ

1.How can I place an order for BSO612CVGXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO612CVGXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO612CVGXUMA1 reliable?

The price and inventory of BSO612CVGXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO612CVGXUMA1 is usually 5 days.

3.What payment methods are accepted for BSO612CVGXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO612CVGXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO612CVGXUMA1?

BSO612CVGXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO612CVGXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO612CVGXUMA1?

For technical support, including BSO612CVGXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO612CVGXUMA1 requirements.

6.How does Aetrix verify that BSO612CVGXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSO612CVGXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO612CVGXUMA1 meets industry standards.

7.What is the process for return or replacement of BSO612CVGXUMA1?

All BSO612CVGXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO612CVGXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO612CVGXUMA1 part is unused and in its original packaging.

Return procedure for BSO612CVGXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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