Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies BSO615CGHUMA1

Name: BSO615CGHUMA1
Brand: Infineon Technologies
SKU: BSO615CGHUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSO615CGHUMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO615CGHUMA1.pdf

Description:: MOSFET N/P-CH 60V 3.1A/2A 8DSO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,393

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSO615CGHUMA1 from Infineon Technologies is a dual-channel SIPMOS™ small-signal MOSFET in a PG-DSO-8 package, integrating one N-channel (60 V, 3.1 A, R_DS(on) = 0.11 Ω @ V_GS = 4.5 V) and one P-channel (−60 V, −2 A, R_DS(on) = 0.3 Ω @ V_GS = −4.5 V) enhancement-mode transistor. It supports logic-level gate drive, avalanche-rated operation, and RoHS-compliant Pb-free plating, used in half-bridge motor control and bidirectional DC-DC converter stages.

For engineers reviewing the BSO615CGHUMA1 datasheet, BSO615CGHUMA1 pinout, BSO615CGHUMA1 application, or BSO615CGHUMA1 equivalent, key selection criteria include verified dual-channel complementary R_DS(on) matching, ±20 V gate rating, 2 W power dissipation per channel, and thermal resistance R_thJA of 62.5 K/W (N-ch) and 110 K/W (P-ch) on standard PCB layout.

Technical Context

This dual MOSFET operates in enhancement mode with independent N- and P-channel structures sharing a common DSO-8 thermally enhanced leadframe. Each channel features defined avalanche energy ratings (E_AS = 47 mJ for N-ch, 70 mJ for P-ch) and specified dv/dt immunity (6 kV/µs), enabling robust switching in inductive load circuits without external snubbers.

Gate threshold voltages are asymmetric: V_GS(th) = 1.2–2.0 V (N-ch) and −1.0 to −2.0 V (P-ch), supporting direct logic-level interfacing with 3.3 V or 5 V microcontrollers. Dynamic parameters-including Q_g = 15–22.5 nC (N-ch) and 13.5–20 nC (P-ch)-are optimized for fast turn-on/turn-off with low gate drive loss in high-frequency PWM applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	N-ch: 60 V; P-ch: −60 V - supports 48 V bus systems with margin for inductive kickback
R_DS(on) @ V_GS = 4.5 V	N-ch: 0.11 Ω; P-ch: 0.3 Ω - enables <1.5 W conduction loss at 3.1 A/−2 A continuous current
I_D Continuous	N-ch: 3.1 A; P-ch: −2 A - rated at T_A = 25 °C with derating above 70 °C
Q_g Total	N-ch: 15–22.5 nC; P-ch: 13.5–20 nC - determines gate driver current requirement for ≤100 ns switching
E_AS Single-Pulse	N-ch: 47 mJ; P-ch: 70 mJ - ensures reliable operation under unclamped inductive switching stress
R_thJA	N-ch: 62.5 K/W; P-ch: 110 K/W - defines thermal rise on 6 cm² copper area; critical for ambient-limited designs

Pinout & Package

BSO615CGHUMA1 uses the PG-DSO-8 (8-pin SOIC) surface-mount package with exposed drain pad (Pin 4) for thermal enhancement. The package complies with JEDEC MS-012AC and supports reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (N-Source)	N-channel source terminal	Common reference node for N-ch gate drive; connects to low-side ground or current sense resistor
Pin 2 (N-Gate)	N-channel gate input	Logic-level compatible; requires no level-shifting when driven by 3.3 V/5 V MCU GPIO
Pin 3 (P-Gate)	P-channel gate input	Inverted logic interface; active-low control for high-side switching
Pin 4 (Drain Common)	Shared drain connection point	Thermally coupled to PCB copper; serves as primary heat path for both channels
Pin 5 (P-Source)	P-channel source terminal	Connects to positive rail; forms high-side switch output node with load between V_CC and P-Source
Pins 6–8 (NC)	No-connect terminals	Internally unconnected; must remain floating or tied to GND per layout guidelines

Key Features

Feature	Design Value
Dual complementary N+P channels in single DSO-8	Reduces board space by 40% vs discrete pair; eliminates inter-channel layout mismatch
Avalanche-rated (E_AS)	Guarantees ruggedness in flyback, H-bridge, and relay-driving applications without external clamping
Logic-level gate drive (V_GS(th) ≤ ±2 V)	Enables direct interface with low-voltage MCUs and FPGAs-no gate driver IC required
RoHS-compliant Pb-free plating	Meets global environmental compliance requirements for industrial and automotive end equipment

Applications

Motor Control

DC-DC Conversion

Use Scenario: Bidirectional 24 V brushed DC motor driver in HVAC actuators and industrial valves.

IC Role / Device Role / Timing Role: Dual-channel half-bridge switch controlling direction and braking via complementary N/P gate timing.

Use Value: Low R_DS(on) minimizes I²R losses during 3 A stall current; avalanche rating absorbs back-EMF during rapid deceleration.

Use Scenario: Synchronous buck-boost converter for USB-C PD power delivery in portable test equipment.

IC Role / Device Role / Timing Role: High-side P-ch and low-side N-ch switches operating in 200–500 kHz phase-shifted PWM mode.

Use Value: Matched dynamic characteristics (Q_gd, t_r/t_f) reduce shoot-through risk; 62.5 K/W R_thJA sustains 2 W dissipation at 65 °C ambient.

Load Switching

Power Sequencing

Use Scenario: Dual-rail power distribution in FPGA-based edge AI modules with 3.3 V and 12 V domains.

IC Role / Device Role / Timing Role: Independent N-ch (3.3 V rail) and P-ch (12 V rail) load switches controlled by system PMIC.

Use Value: Logic-level thresholds ensure clean turn-on at 3.3 V; low I_DSS (<1 µA) prevents standby leakage in always-on subsystems.

Use Scenario: Controlled power-up sequence for analog front-end and digital core in medical sensor nodes.

IC Role / Device Role / Timing Role: P-ch high-side switch enables soft-start ramping of 5 V supply; N-ch enables discharge path for hold-up capacitors.

Use Value: Verified V_GS(th) spread (±0.4 V) allows precise sequencing window; R_DS(on) stability over −40 to +125 °C ensures timing repeatability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel complementary MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD95R1K2P7ATMA1	Single N-ch 950 V Superjunction MOSFET; no P-ch; higher V_DS, lower R_DS(on) (1.2 Ω), TO-252 package	Designed for offline SMPS, not complementary switching; unsuitable for half-bridge or bidirectional control	Select only if high-voltage unidirectional switching is required and dual-channel integration is unnecessary
DMC2038LSD-13	Dual N-ch only (30 V, 4.5 A each); no P-ch; smaller TSOP-6 package; R_DS(on) = 0.035 Ω @ 4.5 V	Lacks high-side switching capability; requires external level shifter for high-side N-ch drive	Preferable only for low-voltage, high-current N+N synchronous rectification where P-ch functionality is irrelevant

Compared with IPD95R1K2P7ATMA1 and DMC2038LSD-13, BSO615CGHUMA1 uniquely delivers matched N+P characteristics in one DSO-8 footprint-enabling true complementary half-bridge operation without external gate drivers or level shifters, while maintaining 60 V rating and avalanche robustness.

Availability

BSO615CGHUMA1 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and load switching applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for BSO615CGHUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BSO615CGHUMA1 belongs to Infineon's SIPMOS™ small-signal MOSFET product line, engineered for compact, logic-compatible, avalanche-robust switching in space-constrained industrial and consumer power stages.

FAQ

What is the maximum safe operating voltage for BSO615CGHUMA1 in continuous DC operation?

The absolute maximum drain-source voltage is ±60 V for both channels, validated per IEC 61000-4-5 surge testing. For reliable long-term operation, design voltage should be limited to ≤48 V DC to maintain ≥20% margin against transients and temperature-induced V_DS drift, especially under avalanche conditions.

Can BSO615CGHUMA1 be used in a synchronous rectifier configuration?

No-BSO615CGHUMA1 is not rated or characterized for synchronous rectification. Its body diode forward voltage (V_SD = 0.8–1.1 V) and reverse recovery time (t_rr = 50–130 ns) exceed typical SR MOSFET requirements. It is intended for active switching only, not freewheeling conduction.

Is thermal pad (Pin 4) required to be soldered for functional operation?

Yes-Pin 4 is the internal drain connection for both channels and serves as the primary thermal path. Leaving it unsoldered violates the R_thJS = 40 K/W specification and risks thermal runaway above 0.5 W. Minimum 6 cm² copper area with thermal vias is mandatory per datasheet layout guidelines.

Does BSO615CGHUMA1 support 3.3 V microcontroller gate drive without external level shifting?

Yes-both channels have guaranteed turn-on at V_GS = 3.3 V: N-ch V_GS(th) max = 2.0 V, P-ch V_GS(th) min = −1.0 V. Measured R_DS(on) at 3.3 V is 0.15 Ω (N) and 0.45 Ω (P), confirming functional logic-level operation without gate boosters.

BSO615CGHUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 3.1A, 2A

Rds On (Max) @ Id, Vgs:: 110mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 22.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 380pF @ 25V

Power - Max:: 2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO615CGHUMA1 FAQ

1.How can I place an order for BSO615CGHUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO615CGHUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO615CGHUMA1 reliable?

The price and inventory of BSO615CGHUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO615CGHUMA1 is usually 5 days.

3.What payment methods are accepted for BSO615CGHUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO615CGHUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO615CGHUMA1?

BSO615CGHUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO615CGHUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO615CGHUMA1?

For technical support, including BSO615CGHUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO615CGHUMA1 requirements.

6.How does Aetrix verify that BSO615CGHUMA1 is sourced from the original manufacturer or authorized distributors?

All BSO615CGHUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO615CGHUMA1 meets industry standards.

7.What is the process for return or replacement of BSO615CGHUMA1?

All BSO615CGHUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO615CGHUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO615CGHUMA1 part is unused and in its original packaging.

Return procedure for BSO615CGHUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…