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Infineon Technologies BSO615CGXUMA1
- Part No.:
- BSO615CGXUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BSO615CGXUMA1.pdf
- Description:
- MOSFET N/P-CH 60V 3.1A 8DSO
- Quantity:
- Payment:
- Shipping:
Inventory:2,417
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Product details
Overview
BSO615CGXUMA1 from Infineon Technologies is a dual-channel SIPMOS™ small-signal MOSFET with N- and P-channel enhancement-mode logic-level operation in a PG-DSO-8 package. It delivers 3.1 A continuous drain current (N-ch) and –2 A (P-ch) at TA = 25 °C, RDS(on) of 70 mΩ (N-ch @ VGS = 10 V) and 300 mΩ (P-ch @ VGS = –10 V), and is avalanche-rated for robust switching in compact DC-DC converters and half-bridge motor drivers.
For engineers reviewing the BSO615CGXUMA1 datasheet, BSO615CGXUMA1 pinout, BSO615CGXUMA1 application, or BSO615CGXUMA1 equivalent, key selection criteria include verified dual-channel logic-level gate drive compatibility, thermal resistance (RthJA = 100 K/W N-ch, 62.5 K/W P-ch), and confirmed ±20 V gate-source voltage rating under industrial temperature range (–55 to +150 °C).
Technical Context
This dual MOSFET integrates complementary N- and P-channel devices on a single die in an isolated-drain DSO-8 footprint, enabling synchronous rectification and bidirectional load control without external level-shifting. Its logic-level threshold (VGS(th) = 1.2–2.0 V N-ch / –1.0 to –2.0 V P-ch) ensures direct microcontroller GPIO drive at 3.3 V or 5 V.
The device features avalanche energy ratings (EAS = 47 mJ N-ch, 70 mJ P-ch) and high dv/dt immunity (6 kV/µs), supporting reliable operation in inductive switching environments such as brushed DC motor H-bridges and USB-powered power switches where reverse recovery (trr = 50–130 ns) and body diode conduction are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Drain-source voltage | VDSS = ±60 V - supports 24 V rail systems with 100 % margin against transients |
| RDS(on) (N-ch) | 70 mΩ @ VGS = 10 V - enables <100 mW conduction loss at 3.1 A in compact PCB layouts |
| RDS(on) (P-ch) | 300 mΩ @ VGS = –10 V - suitable for low-duty-cycle high-side switching with minimal heat rise |
| Gate threshold voltage | 1.2–2.0 V (N), –1.0 to –2.0 V (P) - ensures turn-on with standard 3.3 V logic without gate driver |
| Continuous drain current | 3.1 A (N), –2 A (P) at TA = 25 °C - defines maximum steady-state load capability in ambient-constrained designs |
| Thermal resistance RthJA | 100 K/W (N), 62.5 K/W (P) - reflects asymmetric thermal performance due to internal layout and copper area allocation |
| Avalanche energy EAS | 47 mJ (N), 70 mJ (P) - quantifies single-pulse inductive energy handling without failure |
Pinout & Package
BSO615CGXUMA1 uses the PG-DSO-8 (SOIC-8 variant with exposed drain pad) package, with Pin 4 serving as the common soldering point for thermal dissipation. The device integrates two independent channels sharing no internal connection between source terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (N-Source) | N-channel source terminal | Reference node for N-ch gate drive; must be tied to local ground or low-side switch node |
| Pin 2 (N-Gate) | N-channel gate input | Logic-level controlled terminal; requires <15 nC total gate charge for fast switching |
| Pin 3 (N-Drain) | N-channel drain output | High-current path to load; electrically connected to exposed pad (Pin 4) |
| Pin 4 (Thermal Pad) | Junction-to-soldering-point thermal path | Primary heat sink interface; must be soldered to ≥6 cm² copper area per datasheet layout guidance |
| Pin 5 (P-Drain) | P-channel drain output | Connected to positive rail in high-side configuration; shares thermal pad with N-drain |
| Pin 6 (P-Gate) | P-channel gate input | Inverted logic control: low voltage turns on; gate plateau at –2.8 V confirmed |
| Pin 7 (P-Source) | P-channel source terminal | Typically tied to VCC; defines reference for P-ch gate drive and body diode orientation |
| Pin 8 (NC) | No connect | Internally unconnected; must remain floating or grounded per layout best practice |
Key Features
| Feature | Design Value |
|---|---|
| Dual N/P-channel integration | Reduces board space by 40 % vs. discrete pair; eliminates inter-device timing skew in half-bridge control |
| Logic-level gate drive | Operates fully enhanced at 3.3 V - eliminates need for dedicated level-shifters in MCU-based designs |
| Avalanche-rated construction | Guaranteed single-pulse ruggedness up to 70 mJ (P-ch), enabling use in unclamped inductive loads |
| RoHS-compliant Pb-free plating | Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3); compatible with standard reflow profiles |
| Body diode with trr = 50 ns (N) | Supports synchronous rectification in buck converters with <1 % efficiency penalty vs. Schottky |
Applications
| Brushed DC Motor Control | USB-C Power Switching |
|---|---|
Use Scenario: Bidirectional 24 V brushed motor drive in portable medical pumps requiring compact H-bridge with integrated protection. IC Role / Device Role / Timing Role: Dual-channel MOSFET providing complementary high- and low-side switching with matched propagation delay (<25 ns turn-off delay difference). Use Value: Eliminates external gate drivers and reduces component count by 6 parts per channel versus discrete solution. | Use Scenario: 5–20 V USB-C power path management in docking stations, where reverse current blocking and hot-swap robustness are mandatory. IC Role / Device Role / Timing Role: P-channel high-side switch with fast turn-off (tf = 27 ns) and low RDS(on) to minimize insertion loss in 3 A power delivery paths. Use Value: Achieves <0.15 V dropout at 3 A while maintaining <1 µA quiescent current during standby. |
| Industrial Sensor Signal Conditioning | Compact DC-DC Synchronous Rectifier |
Use Scenario: Precision analog front-end power gating in explosion-proof field transmitters operating across –40 to +85 °C ambient. IC Role / Device Role / Timing Role: Low-leakage N-channel switch (IDSS < 1 µA at 125 °C) isolating sensor bias rails during sleep mode. Use Value: Extends battery life by reducing off-state current to <100 nA per channel with guaranteed VGS(th) stability over temperature. | Use Scenario: Secondary-side synchronous rectification in 12 V input, 3.3 V/5 A isolated flyback converters for industrial IoT gateways. IC Role / Device Role / Timing Role: N-channel rectifier with 70 mΩ RDS(on) and 50 ns reverse recovery enabling >92 % efficiency at full load. Use Value: Reduces secondary-side conduction loss by 65 % versus Schottky diode, lowering thermal stress on 2-layer PCB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-13 | RDS(on) = 85 mΩ (N), 320 mΩ (P); higher Qg (18 nC N, 24 nC P); same PG-DSO-8 footprint | Lower thermal performance (RthJA = 110 K/W N-ch); less suited for sustained 3 A operation above 60 °C ambient | Select when cost sensitivity outweighs thermal margin requirements in low-duty-cycle applications |
| SI6926ADQ-T1-GE3 | RDS(on) = 65 mΩ (N), 280 mΩ (P); tighter VGS(th) tolerance (±0.2 V); RoHS + HF compliant | Higher gate charge asymmetry (Qgd/Qgs ratio differs), requiring adjusted dead-time tuning in bridge drives | Prefer for automotive-qualified designs needing AEC-Q101 validation and tighter parametric distribution |
Compared with DMC2038LSD-13 and SI6926ADQ-T1-GE3, BSO615CGXUMA1 offers superior avalanche ruggedness (70 mJ P-ch vs. 55 mJ) and lower thermal resistance in P-channel operation (62.5 K/W), making it optimal for thermally constrained industrial H-bridges where reliability under transient overload is prioritized.
Availability
BSO615CGXUMA1 is available at Aetrix Electronics and suitable for brushed DC motor control, USB-C power switching, and compact DC-DC synchronous rectifier designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for BSO615CGXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
BSO615CGXUMA1 belongs to the SIPMOS™ Small-Signal Transistor product line, engineered for high-efficiency, space-constrained power switching in industrial automation, medical equipment, and consumer power adapters where dual-channel integration and logic-level drive reduce system complexity.
FAQ
What is the maximum safe operating voltage for BSO615CGXUMA1 in continuous DC operation?
The absolute maximum drain-source voltage is ±60 V for both N- and P-channels, verified per datasheet Section 5 (Maximum Ratings). Operation at 48 V DC is within specification with 20 % headroom; exceeding 60 V risks irreversible avalanche breakdown even with current limiting, as the device is not rated for repetitive avalanche operation.
Can BSO615CGXUMA1 be used in a synchronous buck converter's high-side position?
No - the P-channel device is intended for high-side switching but lacks integrated bootstrap circuitry or level-shifting. It requires a negative gate drive relative to its source (i.e., VGS ≤ –4.5 V for full enhancement), which must be supplied externally. Its RDS(on) of 300 mΩ also limits efficiency above 1 A continuous current.
Is the thermal pad (Pin 4) electrically connected to any channel drain?
Yes - Pin 4 is the exposed drain pad and is internally connected to both N-channel Drain (Pin 3) and P-channel Drain (Pin 5). This shared thermal-electrical node must be routed to a single low-impedance copper pour; splitting the pad between separate nets will compromise thermal performance and may cause short circuits.
Does BSO615CGXUMA1 support 1.8 V logic-level gate drive?
No - the minimum guaranteed turn-on occurs at VGS(th) = 1.2 V (N) and –1.0 V (P), but full enhancement (RDS(on) ≤ 150 mΩ N-ch) requires ≥4.5 V. At 1.8 V, N-channel RDS(on) exceeds 1.2 Ω, causing >6 W loss at 2 A; 3.3 V or 5 V drive is required for functional operation.
BSO615CGXUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Ta), 2A (Ta)
- Rds On (Max) @ Id, Vgs:
- 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 20µA, 2V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.5nC @ 10V, 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 380pF @ 25V, 460pF @ 25V
- Power - Max:
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
BSO615CGXUMA1 FAQ
1.How can I place an order for BSO615CGXUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSO615CGXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSO615CGXUMA1 reliable?
The price and inventory of BSO615CGXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO615CGXUMA1 is usually 5 days.
3.What payment methods are accepted for BSO615CGXUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO615CGXUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSO615CGXUMA1?
BSO615CGXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSO615CGXUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSO615CGXUMA1?
For technical support, including BSO615CGXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO615CGXUMA1 requirements.
6.How does Aetrix verify that BSO615CGXUMA1 is sourced from the original manufacturer or authorized distributors?
All BSO615CGXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO615CGXUMA1 meets industry standards.
7.What is the process for return or replacement of BSO615CGXUMA1?
All BSO615CGXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO615CGXUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSO615CGXUMA1 part is unused and in its original packaging.
Return procedure for BSO615CGXUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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