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Infineon Technologies BSO615CT
- Part No.:
- BSO615CT
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BSO615CT.pdf
- Description:
- MOSFET N/P-CH 60V 3.1A/2A 8DSO
- Quantity:
- Payment:
- Shipping:
Inventory:3,745
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Product details
Overview
BSO615CT from Infineon Technologies is a dual-channel SIPMOS™ small-signal MOSFET in SO-8 package, integrating one N-channel (60 V, 3.1 A, 0.11 Ω @ 4.5 V) and one P-channel (-60 V, -2 A, 0.3 Ω @ -4.5 V) enhancement-mode logic-level transistor. It supports bidirectional switching in half-bridge and H-bridge motor control stages, power supply OR-ing, and load switching with avalanche and dv/dt ruggedness.
For engineers reviewing the BSO615CT datasheet, BSO615CT pinout, BSO615CT application, or BSO615CT equivalent, this dual-channel logic-level MOSFET enables compact DC-DC converter topologies, brushed DC motor drivers, and fault-tolerant power distribution where complementary channel pairing, low gate drive voltage compatibility (±4.5 V), and robust unclamped inductive switching capability are required.
Technical Context
This device implements two independent enhancement-mode MOSFETs sharing a common SO-8 thermal pad (Pin 4), with separate gate, source, and drain terminals for each channel. The N-channel exhibits RDS(on) = 0.07 Ω at VGS = 10 V and 3.1 A, while the P-channel delivers RDS(on) = 0.19 Ω at VGS = −10 V and −2 A - both rated for ±20 V gate-source voltage and 150 °C maximum junction temperature.
It features fully characterized dynamic parameters including Qg = 15 nC (N) / 13.5 nC (P), tr = 75 ns (N) / 115 ns (P), and tf = 18 ns (N) / 27 ns (P) under standard test conditions, supporting high-frequency PWM operation up to several hundred kHz in synchronous rectification and Class-D amplifier output stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | N-ch: 60 V; P-ch: −60 V - supports 48 V bus systems with margin for transient overvoltage |
| RDS(on) @ VGS = ±4.5 V | N-ch: 0.11 Ω; P-ch: 0.3 Ω - enables direct microcontroller GPIO driving without level-shifting |
| ID Continuous | N-ch: 3.1 A; P-ch: −2 A - suitable for 2–3 W load switching or 5–10 W motor drive per channel |
| EAS | N-ch: 47 mJ; P-ch: 70 mJ - withstands unclamped inductive energy in relay or solenoid drive |
| dv/dt Rating | N-ch: 6 kV/µs; P-ch: 6 kV/µs - immune to false turn-on during fast voltage transients in noisy environments |
| Qg | N-ch: 15 nC; P-ch: 13.5 nC - determines gate driver current requirement for <100 ns switching transitions |
| Tjmax | 150 °C - allows operation in sealed enclosures or high-ambient industrial settings |
Pinout & Package
BSO615CT uses an SO-8 surface-mount package with exposed thermal pad (Pin 4) for enhanced heat dissipation. The layout supports dual-channel isolation with dedicated gate, source, and drain connections per FET.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (N-G) | N-channel gate | Logic-level input; requires ≤4.5 V for full enhancement |
| Pin 2 (N-S) | N-channel source | Reference node for N-FET; tied to ground in low-side configuration |
| Pin 3 (N-D) | N-channel drain | Switched high-side output; connects to load or bus rail |
| Pin 4 (Thermal Pad) | Common thermal sink | Internally connected to both drains; must be soldered to PCB copper for RthJS = 40 K/W |
| Pin 5 (P-D) | P-channel drain | Switched low-side output; connects to load return or ground-referenced rail |
| Pin 6 (P-S) | P-channel source | Reference node for P-FET; tied to positive rail in high-side configuration |
| Pin 7 (P-G) | P-channel gate | Inverted logic input; driven low to turn on P-FET |
| Pin 8 (N-S / P-S) | Shared source connection | Not internally shared; Pin 2 and Pin 6 are electrically isolated - external routing required |
Key Features
| Feature | Design Value |
|---|---|
| Dual N- and P-channel integration | Reduces board space by 40% vs. discrete dual-FET solutions in half-bridge gate drivers |
| Avalanche-rated (EAS) | Enables reliable operation without external snubbers in inductive load switching |
| Logic-level gate drive (±4.5 V) | Eliminates need for charge pumps or level shifters when interfacing with 3.3 V/5 V MCUs |
| dv/dt ruggedness (6 kV/µs) | Prevents spurious turn-on in high-noise motor drives or automotive body electronics |
| SO-8 thermal pad (RthJS = 40 K/W) | Supports 2 W continuous dissipation with minimal PCB copper area (6 cm²) |
Applications
| Brushed DC Motor Control | Hot-Swap Power Distribution |
|---|---|
Use Scenario: Bidirectional 24 V brushed DC motor control in industrial actuators and robotic joints. IC Role / Device Role / Timing Role: Dual-channel MOSFET switch implementing H-bridge topology with integrated N/P pair for compact footprint and matched timing. Use Value: Eliminates external level-shifting circuitry and reduces gate drive complexity while maintaining <100 ns dead-time control via matched ton/toff characteristics. | Use Scenario: OR-ing diode replacement in redundant 12 V/24 V power supplies for telecom and server backplanes. IC Role / Device Role / Timing Role: Low-RDS(on) P-channel FET used as ideal diode controller in high-side configuration; N-channel handles reverse polarity protection. Use Value: Reduces forward voltage drop from ~0.4 V (Schottky) to <0.1 V, cutting conduction loss by >70% and enabling cooler, denser power architectures. |
| USB-C Power Delivery Switching | Programmable Load Switching |
Use Scenario: VBUS path switching and overcurrent protection in USB-C PD sink applications requiring ±20 V tolerance. IC Role / Device Role / Timing Role: N-channel FET controls VBUS enable; P-channel provides reverse-blocking and fault isolation during plug insertion/removal. Use Value: Withstands 60 V transients and supports fast 50 ns turn-off (tf) to meet USB-C electromagnetic compatibility requirements. | Use Scenario: Selective power gating of peripheral modules (e.g., sensors, radios) in battery-powered IoT edge nodes. IC Role / Device Role / Timing Role: Complementary pair enables both high-side (P-ch) and low-side (N-ch) load switching from a single control signal. Use Value: Achieves <1 µA shutdown current via gate threshold matching (VGS(th) = 1.2–2.0 V / −1.0 to −2.0 V), extending battery life in sleep modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7252DN | N/P RDS(on) = 0.022/0.035 Ω @ 4.5 V; higher ID (6.5/−5.5 A); SO-8 but no thermal pad | Better conduction efficiency in high-current (>3 A) loads; lower thermal performance without exposed pad | Select for higher current density where PCB cooling is limited; avoid if EAS >40 mJ is required |
| DMC2038LSD | N/P RDS(on) = 0.045/0.075 Ω @ 4.5 V; smaller 3×3 mm TDFN; no avalanche rating | Smaller footprint for space-constrained wearables; lacks unclamped inductive switching capability | Choose for portable devices with tight size budgets and non-inductive loads; not suitable for motor/solenoid drive |
Compared with Si7252DN and DMC2038LSD, BSO615CT offers superior avalanche ruggedness (47/70 mJ) and thermal management (RthJS = 40 K/W), making it preferred for industrial motion control and hot-swap systems where reliability under electrical stress is critical.
Availability
BSO615CT is available at Aetrix Electronics and suitable for brushed DC motor control, hot-swap power distribution, and programmable load switching requiring stable component supply across extended product lifecycles.
Supply support for BSO615CT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power MOSFETs and IGBTs.
BSO615CT belongs to the SIPMOS™ small-signal transistor family, designed specifically for space-constrained, logic-level-driven power switching applications in industrial automation, consumer power supplies, and automotive body electronics.
FAQ
What is the maximum safe operating voltage for BSO615CT's gate terminals?
The absolute maximum gate-source voltage (VGS) is ±20 V for both channels, as specified in the preliminary data sheet. Operation beyond ±15 V risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to ±12 V with series resistance and Zener protection, especially in noisy environments where transient coupling may occur.
Can BSO615CT be used in a synchronous buck converter as high-side and low-side switches?
Yes - the N-channel can serve as the low-side switch and the P-channel as the high-side switch in a non-isolated buck stage. However, due to the P-channel's higher RDS(on) (0.3 Ω vs. 0.11 Ω), conduction losses will be asymmetric. For optimal efficiency above 1 A, consider using two N-channel FETs with bootstrap gate drive instead.
Does BSO615CT include internal ESD protection on its gate terminals?
No - the datasheet does not specify built-in ESD protection diodes. Gate terminals are highly sensitive to electrostatic discharge, with failure thresholds below ±2 kV (HBM). External 10 kΩ current-limiting resistors and 12 V Zener clamps are strongly recommended before PCB assembly and handling.
How is thermal performance affected when the SO-8 thermal pad (Pin 4) is not soldered to PCB copper?
Without thermal pad connection, RthJA degrades from 62.5 K/W (N-ch) and 62.5 K/W (P-ch) to 100/110 K/W respectively, reducing maximum allowable power dissipation by ~50%. At ambient 70 °C, unsoldered pad limits continuous current to ~1.3 A (N) and ~0.9 A (P) - insufficient for rated operation. Full thermal pad soldering is mandatory for compliance with datasheet ratings.
BSO615CT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A, 2A
- Rds On (Max) @ Id, Vgs:
- 110mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 380pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
BSO615CT FAQ
1.How can I place an order for BSO615CT through Aetrix?
Please submit a Request for Quotation (RFQ) for BSO615CT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSO615CT reliable?
The price and inventory of BSO615CT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO615CT is usually 5 days.
3.What payment methods are accepted for BSO615CT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO615CT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSO615CT?
BSO615CT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSO615CT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSO615CT?
For technical support, including BSO615CT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO615CT requirements.
6.How does Aetrix verify that BSO615CT is sourced from the original manufacturer or authorized distributors?
All BSO615CT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO615CT meets industry standards.
7.What is the process for return or replacement of BSO615CT?
All BSO615CT units undergo pre-shipment inspection (PSI). If there is an issue with BSO615CT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSO615CT part is unused and in its original packaging.
Return procedure for BSO615CT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSO615CT Tags
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