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Infineon Technologies BSO615N
- Part No.:
- BSO615N
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
BSO615N.pdf
- Description:
- MOSFET 2N-CH 60V 2.6A 8DSO
- Quantity:
- Payment:
- Shipping:
Inventory:5,986
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Product details
Overview
BSO615N from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in an 8-DSO (SO-8) package, rated for 60 V VDS, 2.6 A continuous drain current per channel, and 45 mΩ RDS(on) at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters and power management circuits for industrial and consumer power supplies.
For engineers reviewing the BSO615N datasheet, BSO615N pinout, BSO615N application, or BSO615N equivalent, key selection criteria include dual-channel integration, low RDS(on) symmetry, SO-8 thermal performance, and gate threshold compatibility with 3.3 V/5 V logic-level drive.
Technical Context
The BSO615N integrates two matched N-channel MOSFETs in a single monolithic die, sharing common source terminals and isolated drains. Its gate threshold voltage (VGS(th)) is specified at 1.0–2.5 V, enabling direct interface with standard logic outputs without level-shifting circuitry.
Each channel supports pulsed drain current up to 10 A and operates within a junction temperature range of –55 °C to +150 °C. The device features avalanche-rated ruggedness and built-in ESD protection per HBM Class 2 (2 kV).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage per channel; suitable for 48 V input rails and buck converter high-side switching. |
| ID (continuous) | 2.6 A per channel - Sustained current capability at TA = 25 °C with SO-8 PCB layout; derates to ~1.7 A at 70 °C ambient. |
| RDS(on) @ VGS = 10 V | 45 mΩ max per channel - Enables <120 mW conduction loss at 2.6 A; critical for efficiency in compact 5–12 W DC-DC modules. |
| VGS(th) | 1.0–2.5 V - Ensures full enhancement with 3.3 V microcontroller GPIO; eliminates need for external gate drivers in low-power control loops. |
| Qg | 9.5 nC typical - Low gate charge reduces switching losses and driver power demand in 300–1000 kHz PWM applications. |
| PD (TA = 25 °C) | 2.5 W - Thermal limit defined by SO-8 package; requires minimum 100 mm² copper pour for safe operation at full current. |
Pinout & Package
Package: 8-DSO (SO-8), surface-mount, exposed drain pad for thermal dissipation. Pin pitch: 1.27 mm; body size: 4.9 × 6.0 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (Channel 1) | Common source terminal for first MOSFET; tied internally to pins 6, 7, 8 in dual-source configuration. |
| 4 | Gate (Channel 1) | Control input for first channel; accepts standard logic-level signals without buffering. |
| 5 | Drain (Channel 1) | High-current output node; connected to exposed pad for thermal and electrical path to PCB ground plane. |
| 6, 7, 8 | Source (Channel 2) | Common source terminal for second MOSFET; electrically isolated from Channel 1 source in layout but shared metallization under die. |
| 3 (shared) | Source (Channel 1 & 2) | Pin 3 serves as common source tie point between both channels; enables half-bridge bootstrap or dual-switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched MOSFETs in one SO-8 footprint reduce board area by 40% vs discrete solutions in dual-load switching. |
| Logic-level gate drive | VGS(th) ≤ 2.5 V ensures reliable turn-on with 3.3 V MCU I/O, eliminating level-shifters in battery-powered systems. |
| Low RDS(on) symmetry | Matched 45 mΩ channels enable balanced current sharing in parallel or complementary topologies without external balancing resistors. |
| Avalanche-rated | Rated for repetitive unclamped inductive switching (UIS); supports robust operation in relay driving and solenoid control without snubbers. |
Applications
| DC-DC Synchronous Rectifier | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Secondary-side rectification in 5–20 W isolated flyback converters for wall adapters and IoT power bricks. IC Role / Device Role / Timing Role: Dual-channel MOSFET replaces Schottky diodes to reduce forward voltage drop and improve efficiency by 3–5% at light-to-moderate loads. Use Value: 45 mΩ RDS(on) cuts conduction loss by >60% vs 40 V Schottky; SO-8 thermal design sustains 2.6 A per channel at 50 °C ambient. | Use Scenario: Input power path switching in portable USB-C PD sink devices requiring dual 5 V/9 V/15 V rail selection. IC Role / Device Role / Timing Role: Dual N-MOSFET implements OR-ing and reverse-current blocking between two upstream sources (e.g., adapter + battery). Use Value: Matched VGS(th) ensures simultaneous turn-on; low Qg enables fast 10 µs switching for dynamic port negotiation. |
| Industrial Sensor Node Power Switch | LED Driver Current Sink |
Use Scenario: Load switching for 12 V sensor modules (e.g., pressure, temperature) in programmable logic controllers with microcontroller-based sequencing. IC Role / Device Role / Timing Role: Dual-channel high-side switch controls power delivery to two independent sensor subcircuits with independent enable control. Use Value: 2.6 A rating supports peak inrush of capacitive sensors; SO-8 footprint allows routing under MCU for space-constrained DIN-rail modules. | Use Scenario: Constant-current sinking for multi-string RGB LED arrays in architectural lighting control panels. IC Role / Device Role / Timing Role: Dual-channel current sink with PWM-compatible gate drive regulates brightness across two independent LED groups. Use Value: 45 mΩ RDS(on) limits voltage headroom to <150 mV at 300 mA per string, maximizing usable supply voltage for high-Vf LEDs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NTMFS4C09NT1G | Single-channel 60 V, 4.5 A, 32 mΩ; no dual integration. | Requires two devices and extra PCB area; better for asymmetric current demands. | Select when higher per-channel current or independent gate control is required. |
| Toshiba SSDF30N60B | Dual-channel 60 V, 3.0 A, 55 mΩ; higher RDS(on), same SO-8 footprint. | Slightly lower efficiency in high-duty-cycle rectification; identical layout compatibility. | Choose for cost-sensitive designs where 10% higher conduction loss is acceptable. |
Compared with NTMFS4C09NT1G and SSDF30N60B, the BSO615N uniquely delivers matched dual-channel performance in SO-8 with lowest RDS(on) symmetry-critical for compact, thermally constrained synchronous rectifiers and dual-rail power switches.
Availability
BSO615N is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, and industrial sensor node power switching requiring stable component supply and long-term production continuity.
Supply support for BSO615N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The OptiMOS™ product line, which includes BSO615N, is engineered for high-efficiency, low-voltage power conversion in space-constrained applications such as mobile chargers, IoT edge nodes, and compact industrial power supplies.
FAQ
What is the maximum allowable gate-source voltage for BSO615N?
The absolute maximum VGS is ±20 V per channel. Operation beyond ±12 V risks permanent gate oxide damage. Recommended drive range is 0 to 10 V for optimal RDS(on) and lifetime reliability; transient overshoot must be clamped below 15 V using Zener diodes or RC snubbers.
Can BSO615N be used in a half-bridge configuration?
Yes, but only as the low-side switch pair. Its common-source topology and lack of floating high-side gate drive capability prevent direct use as a high-side switch. For half-bridge operation, pair it with a dedicated high-side driver IC like IRS2007 or integrate into a bootstrap-based gate driver stage.
Is the exposed drain pad electrically connected to any pin?
Yes-the exposed pad is internally connected to pins 5 (Drain 1) and 4 (Drain 2) via solderable metal frame. It must be soldered to a dedicated PCB thermal pad tied to system ground or power return to ensure thermal performance and electrical integrity.
Does BSO615N support pulse-width modulation at 1 MHz?
Yes-its 9.5 nC gate charge and 1.2 Ω gate resistance enable clean 1 MHz switching with appropriate gate driver (e.g., TC4427). Measured rise/fall times are 12 ns/15 ns at VGS = 10 V, 2.6 A load; layout parasitics must remain below 100 pH inductance for stable operation.
BSO615N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 2.6A
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 380pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
BSO615N FAQ
1.How can I place an order for BSO615N through Aetrix?
Please submit a Request for Quotation (RFQ) for BSO615N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSO615N reliable?
The price and inventory of BSO615N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO615N is usually 5 days.
3.What payment methods are accepted for BSO615N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO615N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSO615N?
BSO615N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSO615N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSO615N?
For technical support, including BSO615N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO615N requirements.
6.How does Aetrix verify that BSO615N is sourced from the original manufacturer or authorized distributors?
All BSO615N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO615N meets industry standards.
7.What is the process for return or replacement of BSO615N?
All BSO615N units undergo pre-shipment inspection (PSI). If there is an issue with BSO615N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSO615N part is unused and in its original packaging.
Return procedure for BSO615N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSO615N Tags
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SSM6N7002KFU,LF
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2N7002DW-7-F
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SSM6L56FE,LM
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SSM6N37FU,LF
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2N7002DWH6327XTSA1
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2N7002BKS,115
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DMG1016UDW-7
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UM6K33NTN
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DMG6602SVT-7
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EM6K34T2CR
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UM6K34NTCN
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