Nexperia USA Inc. BSP030,115

Overview

BSP030,115 from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT223 package, rated for 30 V drain-source voltage, 10 A continuous drain current at 25 °C, and 20–30 mΩ R_DS(on) at V_GS = 10 V / I_D = 5 A. It serves as a logic-level-compatible, low-R_DS(on) switching element in motor drivers, battery management systems, and high-speed load switching circuits.

For engineers reviewing the BSP030,115 datasheet, BSP030,115 pinout, BSP030,115 application, or BSP030,115 equivalent, this device is selected for its fast switching speed (t_on ≤ 35 ns, t_off ≤ 150 ns), integrated source-drain diode with 120 ns reverse recovery time, and thermal resistance of 15 K/W junction-to-solder-point on metal-clad substrate - critical for thermally constrained PCB layouts.

Technical Context

The BSP030,115 employs TrenchMOS™ technology to achieve low gate charge (Q_g(tot) = 24–40 nC) and high transconductance (g_fs = 12 S typical), enabling efficient gate drive with standard logic-level signals (V_GS(th) = 1–2.8 V). Its dual-drain pin configuration (Pins 2 & 4) supports enhanced thermal dissipation via the exposed drain pad.

It features a built-in source-drain diode with V_SD = 0.73–1.0 V at I_S = 1.25 A and Q_r = 150 nC, supporting synchronous rectification and flyback energy recovery. The device operates across −65 °C to +150 °C junction temperature range and withstands ±20 V gate-source voltage per IEC 60134 absolute maximum ratings.

Key Specifications

Pinout & Package

Package: SOT223 (SC-73), surface-mount plastic package with exposed drain pad for thermal conduction and mechanical stability. Dimensions per IEC JEDEC outline: 6.7 × 3.7 × 1.8 mm (L × W × H), 4-lead configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with BUK9Y30-40E and NTMFS4C02N, the BSP030,115 offers the smallest SOT223 footprint, verified fast body diode recovery (120 ns), and guaranteed logic-level operation down to 4.5 V - making it optimal for space-constrained, thermally sensitive, and diode-dependent applications.

Availability

BSP030,115 is available at Aetrix Electronics and suitable for motor control, battery management, and high-speed load switching applications requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for BSP030,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT markets, with roots in Philips Semiconductors' analog and power portfolio.

The BSP030,115 belongs to NXP's legacy TrenchMOS™ power MOSFET product line, designed specifically for cost-sensitive, high-efficiency switching in 12–24 V embedded systems where logic-level drive and thermal performance in small packages are essential.

FAQ

Is BSP030,115 suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage (V_GS(th)) of 1–2.8 V and full enhancement achievable at V_GS = 4.5 V, the BSP030,115 reliably switches 10 A loads using 3.3 V logic when paired with a gate driver capable of sourcing sufficient peak current to charge its 24–40 nC total gate charge within required timing.

What is the maximum continuous power dissipation at 70 °C ambient?

At 70 °C ambient on a standard PCB, junction temperature rise is limited by R_th(j-a) = 100 K/W. To stay below 150 °C T_j, ΔT = 80 K permits P_diss ≤ 0.8 W. On a metal-clad substrate (R_th(j-sp) = 15 K/W), with solder point at 70 °C, ΔT = 80 K allows P_diss ≤ 5.3 W - matching the 8.3 W rating only at T_sp = 25 °C.

Does BSP030,115 have avalanche ruggedness rating?

No avalanche energy rating (E_AS) is specified in the datasheet. The device meets IEC 60134 absolute maximum ratings for V_DS = 30 V, but operation beyond this voltage - including inductive switching spikes - may cause irreversible failure. External clamping or snubbing is required for inductive loads.

Can Pins 2 and 4 be used independently for current sharing?

No. Pins 2 and 4 are internally connected to the same drain node and share the same metallization. They must be routed to the same net - typically the high-current drain plane - to maximize thermal conduction and minimize inductance. Using them separately violates the SOT223 mechanical and electrical design.