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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BSP110,115

Name: BSP110,115
Brand: Nexperia USA Inc.
SKU: BSP110,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSP110,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: BSP110,115.pdf

Description:: MOSFET N-CH 100V 520MA SOT223

Quantity:: RFQ Add To RFQ list

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Inventory:7,232

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Product details

Overview

BSP110 from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode MOSFET using TrenchMOS™ technology in SOT223 package, rated for 100 V drain-source voltage, 520 mA DC drain current at 5 V gate drive, and 6.25 W total power dissipation at 25 °C solder point temperature. It serves as a logic-level-compatible switching element in relay drivers, high-speed line drivers, and level translators.

For engineers reviewing the BSP110 datasheet, BSP110 pinout, BSP110 application, or BSP110 equivalent, this discrete power transistor delivers fast switching (3 ns turn-on, 12 ns turn-off), low R_DS(on) (5–10 Ω @ V_GS = 5 V, I_D = 150 mA), and robust thermal performance (R_th(j-sp) = 20 K/W) suitable for compact surface-mount designs requiring reliable low-voltage gate control.

Technical Context

This MOSFET employs TrenchMOS™ architecture to achieve enhanced transconductance (g_fs = 350 mS typical) and reduced input/output capacitances (C_iss = 25–40 pF, C_oss = 8.5–15 pF), enabling efficient high-frequency switching up to several MHz in digital interface circuits.

Its gate-source threshold voltage (V_GS(th) = 1–2 V at 25 °C) ensures full enhancement with standard 3.3 V or 5 V logic outputs, while its integrated source-drain diode supports bidirectional current handling (I_S = 520 mA DC, t_rr = 30 ns) in flyback or clamping configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum continuous drain-source blocking voltage; supports industrial 24 V and telecom 48 V bus applications.
R_DS(on)	5–10 Ω @ V_GS = 5 V, I_D = 150 mA - Low on-resistance enables <150 mW conduction loss at 300 mA load current.
t_on/t_off	3/12 ns - Fast switching speeds minimize transition losses in PWM and digital signal routing.
C_iss	25–40 pF - Low input capacitance reduces gate drive power and improves rise/fall time consistency.
I_D (DC)	520 mA @ T_sp = 25 °C, V_GS = 5 V - Continuous current rating sufficient for driving small relays or LED strings.
R_th(j-sp)	20 K/W - Junction-to-solder-point thermal resistance allows direct mounting on metal-clad PCBs for passive heat sinking.

Pinout & Package

SOT223 plastic surface-mount package with exposed drain pad for thermal conduction; 4-lead configuration (pins 1–4), where pins 2 and 4 are internally connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts logic-level voltage (≥2 V) to fully enhance channel; requires <100 nA leakage current compliance.
2	Drain (D)	Main current-carrying terminal; electrically tied to pin 4; connects to load or supply rail; handles 100 V blocking and 520 mA conduction.
3	Source (S)	Reference node for gate drive; forms cathode of intrinsic body diode; routed to ground or low-side return path.
4	Drain (D)	Second drain connection; shares same internal node as pin 2; used for mechanical stability and improved thermal transfer via large copper area.

Key Features

Feature	Design Value
TrenchMOS™ technology	Enables lower R_DS(on) and higher g_fs vs. planar VDMOS, improving efficiency in low-duty-cycle switching.
Logic-level gate drive	V_GS(th) ≤ 2 V ensures full enhancement with 3.3 V microcontroller GPIO without external level-shifting circuitry.
Fast switching	3 ns t_on, 12 ns t_off minimizes overlap loss in high-frequency digital interfaces and pulse-width modulated loads.
Integrated body diode	Forward voltage V_SD = 0.95–1.5 V @ 300 mA enables use in freewheeling, clamping, and bidirectional signal paths without external diodes.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving 5–12 V coil relays in PLC I/O modules and industrial control panels.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; operates in saturated on-state with minimal V_DS drop.

Use Value: 520 mA I_D rating and 5 Ω R_DS(on) ensure <260 mW conduction loss, reducing thermal stress on SOT223 footprint.

Use Scenario: Transmitting TTL/CMOS signals across 50 Ω transmission lines in test equipment and data acquisition systems.

IC Role / Device Role / Timing Role: Active pull-down element in push-pull output stage; switches at >10 MHz with sub-15 ns edge times.

Use Value: 3 ns t_on and low C_iss preserve signal integrity and reduce timing skew in multi-channel digital interconnects.

Logic Level Translator

Low-Power Load Switch

Use Scenario: Converting 3.3 V microcontroller outputs to 5 V or 12 V logic levels for legacy peripherals.

IC Role / Device Role / Timing Role: Voltage-level shifter using gate-controlled conduction between isolated voltage domains.

Use Value: V_GS(th) ≤ 2 V and 100 V V_DS allow safe operation across common logic rail combinations without level-shifter ICs.

Use Scenario: Enabling/disabling power to sensors, LEDs, or communication ICs in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by MCU GPIO; supports soft-start via PWM dimming.

Use Value: 6.25 W P_tot and 20 K/W R_th(j-sp) enable sustained 300 mA load current with <10 °C junction rise on thermally optimized PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BS170	Lower V_DS (60 V), higher R_DS(on) (5–10 Ω @ V_GS = 10 V only), TO-92 package	Limited to ≤24 V systems; unsuitable for 48 V telecom or industrial bus applications	Prefer BSP110 when 100 V rating, SOT223 thermal performance, or logic-level compatibility at 5 V is required.
DMN2004LK-7	Higher I_D (2 A), lower R_DS(on) (0.14 Ω), same SOT223, but requires ≥2.5 V V_GS(th)	Better for high-current loads (>500 mA); overqualified for low-power logic translation	Choose BSP110 for cost-sensitive, space-constrained designs where 520 mA and 5 Ω R_DS(on) meet requirements.

Compared with BS170 and DMN2004LK-7, the BSP110 uniquely balances 100 V capability, true logic-level operation at 5 V, and SOT223 thermal efficiency-making it optimal for mid-power industrial interface and relay control where voltage margin and board-level heat dissipation are critical.

Availability

BSP110 is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, and logic-level translator designs requiring stable component supply and long-term industrial lifecycle support.

Supply support for BSP110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT markets, with roots in Philips Semiconductors' analog and discrete power portfolio.

The BSP110 belongs to NXP's legacy TrenchMOS™ discrete power transistor family, engineered for robust, low-cost switching in industrial control, instrumentation, and interface applications demanding reliability under wide temperature and voltage ranges.

FAQ

Is BSP110 suitable for 3.3 V microcontroller gate drive?

Yes. With a gate-source threshold voltage of 1–2 V at 25 °C and guaranteed enhancement at V_GS ≥ 2.5 V, the BSP110 fully turns on using standard 3.3 V GPIO outputs. Its R_DS(on) remains below 10 Ω at V_GS = 3.3 V, ensuring low conduction loss without external level shifting.

What is the maximum continuous drain current at 100 °C solder point temperature?

At T_sp = 100 °C, the BSP110 supports 330 mA DC drain current when V_GS = 5 V, per Figure 2 in the datasheet. This derating reflects thermal limits of the SOT223 package and must be applied in enclosed or high-ambient environments.

Can BSP110 replace BS170 in existing designs?

Yes, with caveats: BSP110 offers higher V_DS (100 V vs. 60 V) and identical SOT223 footprint, but its gate charge and capacitance differ. Layout changes are unnecessary, but verify timing margins and gate drive strength-especially in high-frequency switching applications exceeding 1 MHz.

Does BSP110 include an integrated body diode, and what are its ratings?

Yes. The intrinsic source-drain diode supports 520 mA DC forward current (I_S) and 2 A pulsed current (I_SM). Its forward voltage is 0.95–1.5 V at 300 mA, and reverse recovery time is 30 ns-enabling use in freewheeling, clamping, and bidirectional signal routing without external diodes.

BSP110,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 520mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V

Rds On (Max) @ Id, Vgs:: 10Ohm @ 150mA, 5V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 40 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

BSP110,115 FAQ

1.How can I place an order for BSP110,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP110,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP110,115 reliable?

The price and inventory of BSP110,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP110,115 is usually 5 days.

3.What payment methods are accepted for BSP110,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP110,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP110,115?

BSP110,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP110,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP110,115?

For technical support, including BSP110,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP110,115 requirements.

6.How does Aetrix verify that BSP110,115 is sourced from the original manufacturer or authorized distributors?

All BSP110,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP110,115 meets industry standards.

7.What is the process for return or replacement of BSP110,115?

All BSP110,115 units undergo pre-shipment inspection (PSI). If there is an issue with BSP110,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP110,115 part is unused and in its original packaging.

Return procedure for BSP110,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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