Infineon Technologies BSP135H6906XTSA1

Overview

BSP135H6906XTSA1 from Infineon Technologies is an N-channel depletion-mode SIPMOS® small-signal transistor rated for 600 V drain-source breakdown voltage, 60 Ω max R_DS(on) at V_GS = 0 V and I_D = 10 mA, and 6 kV/µs dv/dt immunity-designed for high-reliability snubberless AC switch control in solid-state relays and EMI-critical lighting ballasts.

For engineers reviewing the BSP135H6906XTSA1 datasheet, BSP135H6906XTSA1 pinout, BSP135H6906XTSA1 application, or BSP135H6906XTSA1 equivalent, key selection criteria include verified V_GS(th) banding (H6906 = L-band: −1.35 V to −1.15 V), SOT-223 package thermal resistance (R_thJS = 25 K/W), and integrated reverse diode with t_rr = 87–130 ns.

Technical Context

This device operates in depletion mode, enabling normally-on switching without gate drive-ideal for fail-safe latching circuits and zero-voltage turn-off in AC phase control. Its dv/dt rating of 6 kV/µs ensures robustness against parasitic turn-on in inductive loads.

It integrates a monolithic fast-recovery body diode (I_S = 0.12 A continuous, V_SD = 0.78–1.2 V at I_F = 0.12 A) and features gate charge parameters (Q_g = 3.7–4.9 nC, Q_gd = 2.0–3.0 nC) optimized for low-loss commutation in <100 kHz switching applications.

Key Specifications

Pinout & Package

Package: PG-SOT223 (standardized JEDEC TO-261AA footprint, 4-pin variant with exposed drain pad). Pin 4 is internally connected to drain and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode high-voltage switching applications.

Compared with BSP134H6327XTSA1 and STP1NK60ZFP, BSP135H6906XTSA1 uniquely combines L-band V_GS(th) control, 6 kV/µs dv/dt immunity, and SOT-223 thermal performance-making it the only option supporting snubberless, fail-safe 230 V_AC switching in space-constrained industrial modules.

Availability

BSP135H6906XTSA1 is available at Aetrix Electronics and suitable for AC solid-state relays, electronic ballasts, fail-safe latching circuits, and industrial timer output stages requiring stable component supply and traceable AEC-Q101 compliance.

Supply support for BSP135H6906XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control devices, with global manufacturing and qualification infrastructure.

The BSP135 belongs to Infineon's SIPMOS® small-signal transistor product line, engineered specifically for high-voltage, low-power depletion-mode switching in safety-critical and EMI-sensitive AC control applications.

FAQ

What does the 'H6906' suffix indicate in BSP135H6906XTSA1?

The 'H6906' suffix identifies the V_GS(th) band (L-band: −1.35 V to −1.15 V) and tape-and-reel packaging (1000 pcs/reel, non-dry pack). It confirms factory-sorted threshold voltage for predictable turn-off behavior across temperature and unit-to-unit variation-critical for timing-critical AC switching.

Can BSP135H6906XTSA1 replace enhancement-mode MOSFETs in existing designs?

No-it is a depletion-mode device that conducts at V_GS = 0 V and requires negative gate bias to turn off. Direct substitution would cause unintended conduction. Replacement demands redesign of gate drive to provide −1.5 V to −3 V turn-off voltage and verify safe operating area under new bias conditions.

Is the integrated body diode rated for continuous conduction?

Yes-the reverse diode supports 0.12 A continuous forward current (I_S) at T_A = 25 °C, with V_SD = 0.78–1.2 V. However, its 130 ns max t_rr and 104 nC Q_rr limit use to <100 kHz commutation; sustained DC conduction requires external heatsinking per R_thJS = 25 K/W spec.

How does the SOT-223 package affect thermal performance in real-world PCB layouts?

With Pin 4 (drain tab) soldered to ≥6 cm² of 70 µm copper on FR4, R_thJA drops to 70 K/W-enabling full 1.8 W power dissipation at T_A = 70 °C. Without this copper area, R_thJA rises to 115 K/W, limiting usable power to ~0.8 W at same ambient, risking thermal runaway in sealed enclosures.