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Nexperia USA Inc. BSP220,115

Part No.:
BSP220,115
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP220,115.pdf
Description:
MOSFET P-CH 200V 225MA SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,298

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Product details

Overview

BSP220,115 from NXP Semiconductors (formerly Philips) is a P-channel enhancement-mode vertical D-MOS transistor in SOT223 package, designed for high-speed switching in relay and line transformer driver circuits. It features −200 V drain-source voltage rating, 225 mA DC drain current, 12 Ω RDS(on) at −ID = 200 mA / −VGS = 10 V, 2.8 V gate-source threshold voltage, and 1.5 W total power dissipation at Tamb = 25 °C.

For engineers reviewing the BSP220,115 datasheet, BSP220,115 pinout, BSP220,115 application, or BSP220,115 equivalent, this part is selected for low-voltage logic-level P-channel switching where compact footprint, fast turn-off (20–30 ns), and direct CMOS/TTL interface capability are required in industrial control and telecom line drivers.

Technical Context

This device operates as a normally-off P-channel MOSFET with vertical D-MOS architecture optimized for low on-resistance and high-speed switching. Its gate-source threshold voltage range (0.8–2.8 V) enables reliable turn-on from standard logic outputs, while absence of secondary breakdown supports robust pulsed operation.

Thermal design relies on the exposed drain pad in SOT223 - requiring ≥6 cm² copper area on epoxy PCB for rated 1.5 W dissipation. Junction-to-ambient thermal resistance is 83.3 K/W under specified mounting conditions, and capacitance profile (Ciss = 65–90 pF, Coss = 20–30 pF) supports stable high-frequency switching up to several MHz.

Key Specifications

ParameterValue and Actual Design Meaning
−VDS200 V - supports isolation and drive in 100–170 V AC line-derived circuits without derating.
−ID (DC)225 mA - sufficient for driving small relays, LED arrays, or bias networks in telecom interfaces.
RDS(on)12 Ω max at −200 mA/−10 V - ensures <1.2 V drop at full rated current, minimizing conduction loss.
−VGS(th)0.8–2.8 V - guarantees turn-on with 3.3 V or 5 V logic, including margin for temperature drift.
toff20–30 ns - enables clean switching in >10 MHz PWM or pulse transformer applications.
Ciss65–90 pF - limits gate drive current demand and supports fast edge rates with low-impedance drivers.
Ptot1.5 W at Tamb = 25 °C - defines maximum continuous power handling under standard PCB layout conditions.

Pinout & Package

SOT223 package with exposed drain pad for thermal conduction; 4-pin surface-mount outline featuring integrated heat-sink capability via large copper area requirement (≥6 cm²).

Pin/TerminalCircuit RoleDesign Meaning
1GateHigh-impedance MOSFET control input; requires no continuous current, only capacitive charge/discharge.
2DrainMain high-side switching node; electrically and thermally connected to exposed metal pad on package underside.
3SourceReference terminal for gate drive and load return path; tied to system ground or negative rail in high-side configuration.
4DrainSecond drain connection - paralleled internally with Pin 2 to enhance current capacity and thermal spreading.

Key Features

FeatureDesign Value
Low RDS(on)12 Ω max enables <250 mW conduction loss at 200 mA, reducing thermal stress in space-constrained designs.
Direct CMOS/TTL interfaceThreshold voltage range (0.8–2.8 V) ensures compatibility with 3.3 V and 5 V logic families without level-shifting.
No secondary breakdownVertical D-MOS structure eliminates safe operating area (SOA) limitations during transient overloads.
High-speed switching20–30 ns turn-off time supports clean signal edges in pulse transformers and solid-state relay timing circuits.

Applications

Relay Driver CircuitsLine Transformer Drivers

Use Scenario: Driving electromagnetic relays in programmable logic controllers and industrial I/O modules.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling relay coil current with logic-level enable.

Use Value: 225 mA DC rating and 200 V blocking voltage allow direct interface to 24–48 V relay coils without external buffering.

Use Scenario: Switching primary windings of broadband line transformers in DSL or ISDN interface cards.

IC Role / Device Role / Timing Role: Fast-switching P-channel MOSFET generating controlled current pulses into transformer primary.

Use Value: 20–30 ns turn-off time minimizes pulse distortion and ringing, preserving signal integrity in baseband transmission.

High-Speed Logic-Level SwitchesTelecom Bias Networks

Use Scenario: Enabling/disabling analog signal paths or reference voltages in mixed-signal test equipment.

IC Role / Device Role / Timing Role: Low-leakage, logic-compatible P-channel switch isolating sub-circuits on demand.

Use Value: ±100 nA gate leakage and 1 µA drain leakage ensure minimal offset drift and long-term stability in precision bias chains.

Use Scenario: Providing programmable bias current to line interface ICs (e.g., SLICs) in VoIP gateway designs.

IC Role / Device Role / Timing Role: Adjustable current source using RDS(on) and gate voltage to set precise bias levels.

Use Value: 10–12 Ω on-resistance tolerance allows predictable current setting with simple gate voltage control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMG2305U-7RDS(on) = 45 mΩ @ −4.5 V (vs. 12 Ω @ −10 V); SOT-23 package; lower voltage rating (−20 V).Not suitable for 100+ V line-derived circuits; limited to low-voltage logic control only.Select only when replacing in 3.3 V systems with <20 V supply and strict size constraints.
SI2305DS-T1-E3RDS(on) = 55 mΩ @ −4.5 V; SOT-23; −20 V VDS; higher gate charge than BSP220.Cannot replace in high-voltage relay or transformer driver roles due to voltage limitation.Prefer for battery-powered portable devices where ultra-low on-resistance at low VGS is critical.

Compared with DMG2305U-7 and SI2305DS-T1-E3, the BSP220,115 uniquely supports 200 V blocking and delivers usable RDS(on) at −10 V gate drive - making it irreplaceable in legacy telecom and industrial line-powered switching where voltage headroom and thermal robustness are non-negotiable.

Availability

BSP220,115 is available at Aetrix Electronics and suitable for relay driver circuits, line transformer drivers, and high-speed logic-level switches requiring stable component supply across extended production lifecycles.

Supply support for BSP220,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips Semiconductors in 2006, specializing in secure connectivity solutions for automotive, industrial, and communication markets.

The BSP220 belongs to NXP's legacy discrete power MOSFET product line, originally developed for high-reliability industrial switching applications demanding ruggedness, predictable SOA, and compatibility with standard logic families.

FAQ

What is the maximum continuous drain current for BSP220,115?

The BSP220,115 supports a maximum DC drain current of 225 mA at Tamb = 25 °C with proper PCB copper area (≥6 cm² for the drain pad). At elevated ambient temperatures, current must be reduced per the derating curve - e.g., ~150 mA at 70 °C - to maintain junction temperature below 150 °C.

Can BSP220,115 be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate-source threshold voltage ranges from 0.8 V to 2.8 V, ensuring reliable turn-on with 3.3 V logic. However, RDS(on) is specified at −10 V VGS; at 3.3 V, on-resistance increases significantly (typical ~40–60 Ω), limiting usable current to ~50 mA for low-loss operation.

Why does BSP220,115 have four pins in SOT223 but only three terminals?

Pin 2 and Pin 4 are both internally connected to the drain and share the same exposed metal pad on the package underside. This dual-drain configuration improves current handling and thermal spreading without requiring additional internal routing - a mechanical redundancy for reliability and manufacturability.

Is BSP220,115 suitable for automotive applications?

No - it is not qualified to AEC-Q101 or any automotive-grade reliability standard. The datasheet explicitly excludes life-support and safety-critical applications, and its 150 °C maximum junction temperature and lack of automotive qualification make it unsuitable for under-hood or ADAS systems.

BSP220,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
225mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
12Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
90 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.5W (Ta)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223

BSP220,115 FAQ

1.How can I place an order for BSP220,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP220,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP220,115 reliable?

The price and inventory of BSP220,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP220,115 is usually 5 days.

3.What payment methods are accepted for BSP220,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP220,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP220,115?

BSP220,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP220,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP220,115?

For technical support, including BSP220,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP220,115 requirements.

6.How does Aetrix verify that BSP220,115 is sourced from the original manufacturer or authorized distributors?

All BSP220,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP220,115 meets industry standards.

7.What is the process for return or replacement of BSP220,115?

All BSP220,115 units undergo pre-shipment inspection (PSI). If there is an issue with BSP220,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP220,115 part is unused and in its original packaging.

Return procedure for BSP220,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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