Nexperia USA Inc. BSP230,135

Overview

BSP230,135 from Nexperia (formerly Philips Semiconductors) is a P-channel enhancement-mode vertical D-MOS transistor in SOT223 package, rated for −300 V drain-source voltage, −210 mA DC drain current, and 17 Ω R_DS(on) at V_GS = −10 V. It serves as a high-voltage line current interruptor in telephone sets and drives relay/transformer loads with fast switching (t_on ≤ 10 ns, t_off ≤ 30 ns).

For engineers reviewing the BSP230,135 datasheet, BSP230,135 pinout, BSP230,135 application, or BSP230,135 equivalent, this device is selected for high-voltage, low-current switching where gate-drive compatibility with CMOS/TTL logic, absence of secondary breakdown, and thermal robustness on standard PCBs are critical.

Technical Context

This MOSFET employs a vertical D-MOS structure optimized for high-voltage blocking (−300 V V_DS) while maintaining low gate threshold (V_GS(th) = −1.95 to −2.8 V) for direct TTL/CMOS interfacing. Its design avoids secondary breakdown-enabling safe operation under inductive load switching without snubbers.

Thermal performance is defined for mounting on a 40 × 40 × 1.5 mm epoxy PCB with ≥6 cm² drain pad, yielding R_{th j-a} = 83.3 K/W. Capacitance profile (C_iss = 60–90 pF, C_oss = 15–30 pF) supports predictable high-speed switching up to 1 MHz test frequency.

Key Specifications

Pinout & Package

Package: SOT223 plastic surface-mounted package with exposed drain pad for thermal conduction; 4-lead configuration (pins 1–4 as per JEDEC MO-178AA).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage switching applications.

Compared with DMN3020LFG-7 and IPD250P03P4L-1R2, the BSP230,135 remains uniquely suited for −240 V telecom line interruption due to its −300 V rating, SOT223 thermal capability, and gate-threshold compatibility with legacy logic-neither alternative meets this combination.

Availability

BSP230,135 is available at Aetrix Electronics and suitable for telephone line interface modules, relay driver boards, line transformer bias circuits, and high-speed signal switching applications requiring stable component supply across long-lifecycle telecom infrastructure programs.

Supply support for BSP230,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert formed from the former Standard Products division of Philips, specializing in high-volume, high-reliability discrete and logic devices for industrial and communications markets.

The BSP230,135 belongs to Nexperia's legacy high-voltage P-channel MOSFET product line, engineered specifically for telecom line interface and electromechanical load switching where voltage endurance and gate-drive simplicity are essential.

FAQ

Is BSP230,135 suitable for high-side switching in −48 V systems?

Yes. Its −300 V V_DS rating provides 6× margin over −48 V nominal line voltage and safely withstands −170 V ringing transients. The P-channel topology enables simple high-side configuration with gate driven relative to source, eliminating need for isolated gate drivers.

What is the maximum continuous drain current at 70 °C ambient?

At T_amb = 70 °C, derating from the 1.5 W P_tot limit yields ~0.9 W allowable dissipation. With R_DS(on) = 17 Ω, maximum continuous I_D is approximately −230 mA (calculated via P = I²R), though the datasheet specifies −210 mA DC rating at T_amb ≤ 25 °C as absolute limit.

Does BSP230,135 require external gate protection?

Yes. Although supplied in antistatic packaging, the gate oxide is sensitive to ESD. A series resistor (10–100 Ω) and/or TVS diode between gate and source is recommended in production designs to clamp transient spikes and limit peak gate current during fast switching.

Can BSP230,135 replace BS250 in existing designs?

No. BS250 is an older P-channel MOSFET with −60 V V_DS, −110 mA I_D, and TO-92 package. BSP230,135 offers triple the voltage rating and SOT223 thermal performance but differs in pinout, package, and gate threshold-requiring layout and drive circuit revision.