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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated BSS123-7

Name: BSS123-7
Brand: Diodes Incorporated
SKU: BSS123-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS123-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS123-7.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,842

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Product details

Overview

BSS123-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 100V V_DSS, 6.0Ω R_DS(ON) @ V_GS = 10V, and 0.17A continuous drain current at +25°C. It serves as a low-voltage, low-current switching device in gate driver stages, small servo motor controls, and discrete load switching circuits.

For engineers reviewing the BSS123-7 datasheet, BSS123-7 pinout, BSS123-7 application, or BSS123-7 equivalent, this page delivers verified electrical parameters, validated SOT23 terminal mapping, JEDEC-qualified reliability data, and real-world use cases aligned with its 100V rating, sub-2V gate threshold, and 22pF C_iss for fast-switching designs.

Technical Context

This discrete MOSFET employs Diodes Incorporated's trench-based process to achieve low R_DS(ON) (3.2Ω typ @ 10V) while maintaining high V_DSS (100V) and low gate charge (Q_g = 1.2nC typ). Its 0.8–2.0V V_GS(TH) range enables direct interfacing with 3.3V and 5V logic without level shifting.

Thermal performance is defined by R_θJA = 417°C/W on FR-4, supporting 300mW power dissipation at +25°C ambient. Dynamic characteristics include t_D(ON) ≤ 8ns and C_iss = 22pF (typ), confirming suitability for high-frequency switching below 1MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Withstands up to 100V drain-source voltage before breakdown, enabling use in 48V industrial bus and 24V control systems.
R_DS(ON) @ V_GS = 10V	3.2Ω (typ), 6.0Ω (max) - Ensures <100mW conduction loss at 0.17A, critical for thermally constrained SOT23 layouts.
V_GS(TH)	0.8–2.0V - Compatible with 1.8V/3.3V/5V microcontroller GPIOs without external level shifters.
C_iss	22pF (typ) - Low input capacitance reduces drive power and speeds up turn-on in gate driver applications.
t_D(ON)	≤8ns - Supports switching frequencies >100kHz in discrete half-bridge or PWM dimming circuits.
P_D	300mW - Maximum steady-state power dissipation on standard FR-4 PCB, defining thermal derating envelope.
I_D (cont)	0.17A @ T_A = +25°C - Continuous current rating under free-air conditions; derates to ~0.1A at +85°C ambient.

Pinout & Package

Package: SOT23 - Surface-mount plastic package with 3 terminals, 0.008g mass, UL 94V-0 rated molding compound, and matte tin-plated Alloy 42 leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for N-channel channel	Connected to ground or low-side reference; internal body diode cathode is tied to drain.
2 (Gate)	Control electrode for channel conduction	High-impedance input requiring minimal drive current; threshold voltage enables logic-level operation.
3 (Drain)	Main current-carrying terminal	Connected to load or higher potential; supports 100V blocking and integrates body diode anode.

Key Features

Feature	Design Value
Low gate threshold voltage	V_GS(TH) down to 0.8V enables direct drive from 1.8V I/O domains without level translation.
Fast switching speed	t_D(ON)/t_F ≤ 8ns/16ns ensures minimal dead-time loss in synchronous rectifier or half-bridge configurations.
Low input capacitance	C_iss = 22pF minimizes Miller effect and reduces gate driver power consumption in high-frequency PWM.
High reliability qualification	JEDEC-compliant construction with AEC-Q stress test references supports industrial and automotive-adjacent use.
Green and RoHS-compliant	Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb), fully lead-free per EU RoHS 3 directives.

Applications

Small Servo Motor Control

Power MOSFET Gate Driver

Use Scenario: Driving direction and enable signals for 12V/24V brushed DC servo motors in robotics and actuation modules.

IC Role / Device Role / Timing Role: Low-side switch controlling motor winding current path; operates in linear or PWM mode at ≤20kHz.

Use Value: 0.17A rating and 6.0Ω R_DS(ON) limit I²R losses to <17mW at full current, reducing thermal load on compact PCBs.

Use Scenario: Level-shifting and buffering gate signals for high-side N-channel power MOSFETs in DC-DC converters.

IC Role / Device Role / Timing Role: Discrete buffer stage isolating MCU GPIO from gate capacitance; switches at 100–500kHz.

Use Value: 22pF C_iss and ≤8ns t_D(ON) minimize propagation delay and ensure clean edge integrity into 1–5nF gate loads.

Low-Voltage Load Switch

LED Current Regulation

Use Scenario: Enabling/disabling 3.3V or 5V peripheral rails in portable instrumentation and sensor nodes.

IC Role / Device Role / Timing Role: High-side or low-side load switch controlled by microcontroller; operated in on/off state only.

Use Value: 100V V_DSS provides margin against inductive kickback; ±20V V_GS rating allows safe gate overdrive during hot-swap events.

Use Scenario: Constant-current sink for indicator LEDs or status lighting in industrial HMIs and control panels.

IC Role / Device Role / Timing Role: Linear current regulator using source degeneration resistor; biased in saturation region.

Use Value: Tight V_GS(TH) tolerance (0.8–2.0V) ensures consistent LED brightness across temperature and unit-to-unit variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(ON) = 2.8Ω @ 4.5V (vs. BSS123-7's 3.8Ω @ 4.5V); V_DSS = 20V (vs. 100V)	Lower voltage rating restricts use to ≤12V systems; better suited for battery-powered logic-level switching.	Select when V_DD ≤ 12V and gate drive is limited to 3.3V/4.5V; avoid where 100V blocking is required.
2N7002K-7	V_DSS = 60V (vs. 100V); R_DS(ON) = 3.5Ω @ 10V (vs. 6.0Ω max); Q_g = 0.7nC (vs. 1.2nC typ)	Lower blocking voltage and faster switching suit 24V industrial I/O but not 48V+ bus protection.	Prefer for cost-sensitive 24V applications needing faster edges; verify 60V margin suffices for surge transients.

Compared with DMN2004LK-7 and 2N7002K-7, BSS123-7 uniquely balances 100V robustness with logic-level gate drive and JEDEC reliability-making it optimal for 24–48V servo drivers and gate buffers where voltage margin and qualification matter more than ultra-low R_DS(ON).

Availability

BSS123-7 is available at Aetrix Electronics and suitable for small servo motor controls, power MOSFET gate drivers, and low-voltage load switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSS123-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers and manufacturing facilities across Asia and the Americas.

The BSS123-7 belongs to Diodes' general-purpose logic-level MOSFET product line, engineered for reliable low-power switching in space-constrained industrial, computing, and consumer applications where voltage margin and qualification are critical.

FAQ

What is the maximum continuous drain current for BSS123-7 at +85°C ambient?

The BSS123-7 datasheet specifies 0.17A continuous drain current at +25°C ambient. At +85°C, derating follows the 300mW power limit and R_θJA = 417°C/W, resulting in approximately 0.10–0.12A maximum continuous current depending on PCB copper area and airflow.

Does BSS123-7 have an integrated body diode, and what is its forward voltage?

Yes, BSS123-7 includes an inherent parasitic body diode between drain and source. Its forward voltage is specified as V_SD = 0.84V (typ) at I_S = 0.34A and V_GS = 0V, with a maximum of 1.3V under those conditions. This diode conducts during inductive flyback events.

Can BSS123-7 be used in automotive applications?

The standard BSS123-7 is not automotive-qualified, but Diodes offers the BSS123Q variant, which is AEC-Q101 qualified and documented separately. For automotive-grade designs, BSS123Q must be selected; the -7 suffix indicates commercial-grade packaging and screening.

What is the gate charge requirement for driving BSS123-7 at 500kHz?

BSS123-7 has a typical total gate charge Q_g of 1.2nC. At 500kHz, average gate drive current required is Q_g × f = 0.6mA. A standard 3.3V GPIO with ≥10mA drive capability can switch it directly; no external driver needed for moderate-frequency PWM.

BSS123-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 60 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

BSS123-7 FAQ

1.How can I place an order for BSS123-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS123-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS123-7 reliable?

The price and inventory of BSS123-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS123-7 is usually 5 days.

3.What payment methods are accepted for BSS123-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS123-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS123-7?

BSS123-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS123-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS123-7?

For technical support, including BSS123-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS123-7 requirements.

6.How does Aetrix verify that BSS123-7 is sourced from the original manufacturer or authorized distributors?

All BSS123-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS123-7 meets industry standards.

7.What is the process for return or replacement of BSS123-7?

All BSS123-7 units undergo pre-shipment inspection (PSI). If there is an issue with BSS123-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS123-7 part is unused and in its original packaging.

Return procedure for BSS123-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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