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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS123IXTMA1

Name: BSS123IXTMA1
Brand: Infineon Technologies
SKU: BSS123IXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS123IXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS123IXTMA1.pdf

Description:: 100V N-CH SMALL SIGNAL MOSFET IN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS123IXTMA1 from Infineon Technologies is a 100 V, logic-level N-channel enhancement-mode MOSFET in PG-SOT23-3 package, with R_DS(on) ≤ 6 Ω at V_GS = 10 V and ≤ 10 Ω at V_GS = 4.5 V, rated for 190 mA continuous drain current, and qualified per JEDEC for industrial applications - used in low-power load switching and level-shifted gate drive circuits.

For engineers reviewing the BSS123IXTMA1 datasheet, BSS123IXTMA1 pinout, BSS123IXTMA1 application, or BSS123IXTMA1 equivalent, key selection criteria include logic-level gate drive compatibility (4.5 V), low R_DS(on) at 4.5 V, SOT23-3 thermal performance (R_thJA = 250 K/W), and integrated body diode recovery (t_rr = 12–18 ns) in compact surface-mount form.

Technical Context

This OptiMOS™ small-signal transistor operates in enhancement mode with a gate threshold voltage of 0.8–1.8 V and supports logic-level control down to 4.5 V, enabling direct interface with 3.3 V/5 V microcontrollers. Its 100 V V_DS rating and 2.0 mJ single-pulse avalanche energy support robustness in inductive load switching.

The device integrates a fast-recovery body diode (t_rr = 12–18 ns, Q_rr = 4.3–6.5 nC) and exhibits low gate charge (Q_g = 0.63 nC, Q_gd = 0.23 nC), supporting efficient high-frequency switching up to several hundred kHz in space-constrained DC-DC and signal routing designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source voltage, suitable for 24 V industrial bus and 48 V telecom supply rails.
R_DS(on) max @ V_GS = 10 V	6 Ω - Ensures <1.1 mW conduction loss at 190 mA, minimizing self-heating in ambient-limited PCB layouts.
R_DS(on) max @ V_GS = 4.5 V	10 Ω - Enables full enhancement with standard 3.3 V/5 V GPIOs without external level-shifting circuitry.
I_D continuous	190 mA - Supports low-current loads such as LED drivers, sensor biasing, and enable/disable control paths.
t_rr / Q_rr	12–18 ns / 4.3–6.5 nC - Limits reverse recovery losses during synchronous rectification or flyback snubber operation.
ESD HBM Class	Class 0 (<250 V) - Requires handling precautions; not suited for unshielded user-accessible I/O interfaces.
P_tot @ T_A = 25 °C	0.5 W - Delivers usable power in minimal 40 mm² FR4 footprint with 1 mm traces on both sides.

Pinout & Package

Package: PG-SOT23-3 - Standard plastic SOT-23 outline with gull-wing leads, optimized for automated placement and reflow soldering on 1 mm trace-width PCBs.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; accepts logic-level input (0.8–1.8 V threshold); requires <0.63 nC total charge for full turn-on.
Pin 2	Source	Reference node for gate drive; tied to system ground or low-side return path; carries full load current (≤190 mA).
Pin 3	Drain	High-side switch node; connects to load or supply rail; withstands 100 V transient spikes and supports avalanche energy up to 2.0 mJ.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5 V, eliminating need for gate driver ICs in microcontroller-peripheral interfaces.
JEDEC industrial qualification	Validated for operation from −55 °C to +150 °C junction temperature, supporting extended-life embedded deployments.
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU, enabling compliance in medical and industrial end-equipment.
Low gate charge (Q_g)	0.63 nC total gate charge enables fast switching with minimal driver power consumption and reduced EMI generation.

Applications

LED Current Control

Sensor Bias Switching

Use Scenario: Precision dimming of indicator LEDs in industrial HMIs where current must be limited to 100–200 mA without thermal derating.

IC Role / Device Role / Timing Role: Low-side constant-current switch controlled by PWM from MCU GPIO.

Use Value: R_DS(on) ≤ 10 Ω at 4.5 V ensures stable current regulation across V_GS variation; SOT23-3 footprint fits dense front-panel layouts.

Use Scenario: Enabling/disabling analog sensor bias rails (e.g., RTD excitation, Hall-effect sensors) only during active measurement cycles.

IC Role / Device Role / Timing Role: Power-gating FET isolating sensor supply to reduce system standby current.

Use Value: Sub-1 µA I_DSS at 100 V and low gate leakage (<10 nA) prevent unintended bias leakage during sleep states.

Microcontroller I/O Protection

Low-Voltage Level Shifting

Use Scenario: Isolating sensitive MCU pins from higher-voltage peripherals (e.g., 12 V solenoid drivers, relay coils) to prevent latch-up or overvoltage damage.

IC Role / Device Role / Timing Role: Bidirectional protection switch placed between MCU GPIO and external interface node.

Use Value: 100 V V_DS rating and Class 0 ESD tolerance allow safe clamping of transients while maintaining logic integrity.

Use Scenario: Translating 3.3 V logic signals to 5 V or 12 V domains in mixed-supply systems (e.g., USB-to-serial adapters, sensor hubs).

IC Role / Device Role / Timing Role: Single-FET level shifter using source-follower or common-drain configuration.

Use Value: Low V_GS(th) (0.8–1.8 V) and high g_fs (0.41 S) ensure clean edge transition and minimal propagation delay (<10 ns).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 3.5 Ω @ 4.5 V; higher ID (350 mA); SOT-23 package but different pinout (Drain/Source swapped).	Higher current capability suits 3.3 V-driven motor drivers; pinout mismatch requires PCB redesign.	Select when >200 mA load current is required and layout allows pinout adaptation.
FDV303N	R_DS(on) = 3.1 Ω @ 4.5 V; lower V_GS(th) (0.5–1.2 V); same SOT-23-3 pinout (Drain=3, Source=2, Gate=1).	Better low-V_GS margin improves noise immunity; slightly lower avalanche rating (1.2 mJ vs. 2.0 mJ).	Prefer for noise-sensitive 3.3 V systems where gate drive margin is critical and avalanche stress is minimal.

Compared with DMN2004LK-7 and FDV303N, BSS123IXTMA1 offers superior avalanche ruggedness (2.0 mJ) and JEDEC industrial qualification, trading off some R_DS(on) performance for proven reliability in thermally constrained, long-lifecycle industrial modules.

Availability

BSS123IXTMA1 is available at Aetrix Electronics and suitable for industrial HMIs, sensor bias management, microcontroller I/O protection, and low-voltage level-shifting applications requiring stable component supply and long-term manufacturability.

Supply support for BSS123IXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

BSS123IXTMA1 belongs to the OptiMOS™ small-signal transistor product line, designed specifically for space-constrained, logic-level-switched applications in industrial automation, building controls, and portable instrumentation where reliability and thermal efficiency are critical.

FAQ

Is BSS123IXTMA1 pin-compatible with the original BSS123?

Yes - BSS123IXTMA1 uses the identical PG-SOT23-3 package and pinout (Gate=1, Source=2, Drain=3) as the legacy BSS123, with improved R_DS(on) specs and JEDEC industrial qualification. No PCB change is required for drop-in replacement in existing designs.

What is the maximum safe operating frequency for BSS123IXTMA1 in switching applications?

Based on its 0.63 nC gate charge and 22 ns fall time, BSS123IXTMA1 supports reliable operation up to ~500 kHz in low-duty-cycle, low-I_D (<100 mA) switching. Above 200 kHz, thermal limits and gate drive strength become dominant constraints.

Does BSS123IXTMA1 include an integrated ESD protection diode?

No - BSS123IXTMA1 has no internal ESD protection diodes beyond its inherent MOSFET structure. Its JESD22-A114 HBM rating is Class 0 (<250 V), meaning external TVS or series resistance is required for I/O-facing applications.

Can BSS123IXTMA1 be used in linear (analog) operation, such as a voltage-controlled resistor?

Yes - its transconductance (g_fs = 0.41 S) and flat R_DS(on) vs. V_GS curve (Diagram 6) support analog use in low-current variable-resistance roles (e.g., programmable gain stages), but thermal stability is limited to ≤100 mW dissipation in linear mode.

BSS123IXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 190mA, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 13µA

Gate Charge (Qg) (Max) @ Vgs:: 0.63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 15 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23-3-5

BSS123IXTMA1 FAQ

1.How can I place an order for BSS123IXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS123IXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS123IXTMA1 reliable?

The price and inventory of BSS123IXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS123IXTMA1 is usually 5 days.

3.What payment methods are accepted for BSS123IXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS123IXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS123IXTMA1?

BSS123IXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS123IXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS123IXTMA1?

For technical support, including BSS123IXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS123IXTMA1 requirements.

6.How does Aetrix verify that BSS123IXTMA1 is sourced from the original manufacturer or authorized distributors?

All BSS123IXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS123IXTMA1 meets industry standards.

7.What is the process for return or replacement of BSS123IXTMA1?

All BSS123IXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS123IXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS123IXTMA1 part is unused and in its original packaging.

Return procedure for BSS123IXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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