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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated BSS123K-13

Name: BSS123K-13
Brand: Diodes Incorporated
SKU: BSS123K-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS123K-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS123K-13.pdf

Description:: BSS FAMILY SOT23 T&R 10K

Quantity:: RFQ Add To RFQ list

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Inventory:2,266

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Product details

Overview

BSS123K-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 100V drain-source voltage, 6Ω R_DS(ON) at V_GS = 10V, and 230mA continuous drain current at +25°C. It serves as a low-power switching device in gate drivers, small servo motor control, and load switching circuits where low gate threshold (0.8–2.0V) and fast switching (t_D(ON) = 2.9ns) are critical.

For engineers reviewing the BSS123K-13 datasheet, BSS123K-13 pinout, BSS123K-13 application, or BSS123K-13 equivalent, key selection considerations include its 100V breakdown rating, 4.5V-compatible R_DS(ON) of 10Ω, ESD-protected gate, low input capacitance (38pF), and thermal resistance of 264°C/W on standard FR-4 PCB.

Technical Context

This MOSFET employs planar silicon technology optimized for low R_DS(ON) while maintaining robust V_DSS and fast switching dynamics. Its gate threshold voltage range (0.8–2.0V) enables reliable turn-on with 3.3V or 5V logic-level drive, and its low C_iss (38pF) and C_rss (1.8pF) minimize Miller effect during high-speed transitions.

The device integrates an intrinsic body diode with V_SD = 0.87V at 0.34A and supports pulsed drain currents up to 600mA. Thermal performance is characterized by R_θJA = 264°C/W (standard layout) and 178°C/W (enhanced copper pad), enabling operation across –55°C to +150°C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Withstands up to 100V drain-source voltage before avalanche, suitable for 24V/48V industrial bus switching.
R_DS(ON)	6Ω @ V_GS = 10V - Delivers <145mW conduction loss at 170mA, enabling efficient low-current switching.
V_GS(TH)	0.8–2.0V - Ensures full enhancement with 3.3V microcontroller GPIO without level-shifting.
C_iss	38pF - Reduces gate drive power requirement and improves switching speed in high-frequency PWM stages.
t_D(ON)	2.9ns - Enables sub-10ns turn-on delay for precise timing control in gate driver feedback loops.
P_D	0.5W - Supports continuous operation at 230mA with adequate PCB copper area for thermal dissipation.
ESD Rating	Class 2 HBM (>2kV) - Integrated gate protection eliminates need for external TVS in most low-energy applications.

Pinout & Package

SOT23-3 surface-mount package with matte tin-plated leads, UL 94V-0 molded plastic case, and 0.008g mass. Moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Connected to ground or low-side reference; forms body diode cathode for reverse recovery paths.
2 (Gate)	Control electrode for channel formation	High-impedance input requiring <10µA leakage; ESD-protected to withstand handling and board-level transients.
3 (Drain)	High-side current output terminal	Rated for 100V blocking; connects to load or supply rail; carries full switched current and body diode forward current.

Key Features

Feature	Design Value
Low gate threshold voltage	0.8–2.0V ensures reliable turn-on with 3.3V/5V logic, eliminating external level shifters in MCU-driven switches.
Fast switching speed	2.9ns turn-on delay and 6.7ns fall time support >50MHz PWM operation in compact DC-DC and motor control stages.
Low input capacitance	38pF C_iss reduces gate charge (Q_g = 1.3nC @ 10V), lowering driver IC power consumption and heat generation.
ESD-protected gate	Integrated protection meets HBM Class 2 (>2kV), enabling direct assembly without additional gate clamping components.
High V_DSS / low R_DS(ON) ratio	100V rating with 6Ω on-resistance provides superior figure-of-merit (V_DSS²/R_DS(ON)) for space-constrained 24V systems.

Applications

Small Servo Motor Control

Power MOSFET Gate Driver

Use Scenario: Driving 5–24V brushed DC servos in robotics and actuation modules where size and thermal footprint are constrained.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM duty cycle via microcontroller GPIO.

Use Value: 0.8V gate threshold allows direct 3.3V MCU control; 100V rating accommodates back-EMF spikes up to ±40V during commutation.

Use Scenario: Level-shifting and buffering high-speed gate signals for power MOSFETs/IGBTs in SMPS and motor inverters.

IC Role / Device Role / Timing Role: Active pull-down stage that rapidly discharges gate capacitance during turn-off.

Use Value: 2.9ns t_D(ON) and 6.7ns t_F minimize dead-time uncertainty; low R_DS(ON) limits pull-down voltage drop under 200mA peak sink current.

Low-Power Load Switching

Reverse Polarity Protection

Use Scenario: Enabling/disabling peripheral rails (e.g., sensors, displays) in battery-powered IoT nodes with ultra-low quiescent current.

IC Role / Device Role / Timing Role: High-side or low-side load switch controlled by system PMIC or MCU.

Use Value: 1µA max I_DSS and ±10µA I_GSS ensure <10µW standby loss; SOT23 footprint fits tight board layouts.

Use Scenario: Protecting downstream circuitry from damage due to incorrect battery insertion in portable medical or handheld devices.

IC Role / Device Role / Timing Role: Low-loss series pass element oriented source-to-load to block reverse current flow.

Use Value: Body diode forward voltage of 0.87V minimizes voltage drop in forward conduction; 100V rating covers 2-cell Li-ion (8.4V) and 3-cell (12.6V) configurations with margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(ON) = 3.5Ω @ 4.5V (lower), V_DSS = 20V (reduced), SOT23 package, no ESD protection	Better efficiency below 20V but unsuitable for 24V+ bus applications; requires external gate protection	Select when operating strictly ≤20V and lowest possible on-resistance is prioritized over voltage margin.
2N7002K-T1-GE3	R_DS(ON) = 5.5Ω @ 10V, V_DSS = 60V, same SOT23-3, ESD rated, higher Q_g (2.1nC)	Lower voltage rating limits use in 48V systems; slower switching (t_D(ON) ≈ 5ns) affects high-frequency designs	Choose for cost-sensitive 12–24V applications where 60V margin suffices and ESD robustness remains essential.

Compared with DMN2004LK-7 and 2N7002K-T1-GE3, BSS123K-13 uniquely balances 100V capability, 3.3V logic compatibility, and integrated ESD protection in SOT23-making it optimal for industrial 24V/48V control nodes requiring reliability without added protection components.

Availability

BSS123K-13 is available at Aetrix Electronics and suitable for small servo motor control, power MOSFET gate drivers, and low-power load switching requiring stable component supply, RoHS-compliant sourcing, and traceable lot-level documentation.

Supply support for BSS123K-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The BSS123K belongs to Diodes' general-purpose logic-level MOSFET product line, engineered for space-constrained, low-power switching applications demanding robust gate drive compatibility and thermal stability across extended temperature ranges.

FAQ

Is BSS123K-13 suitable for 3.3V microcontroller GPIO direct drive?

Yes. Its gate threshold voltage range (0.8–2.0V) guarantees full enhancement at 3.3V, and its low input capacitance (38pF) minimizes required drive strength. Measured R_DS(ON) is 10Ω at V_GS = 4.5V and 6Ω at V_GS = 10V, confirming strong conduction even at 3.3V with appropriate layout.

What is the maximum continuous drain current at 70°C ambient?

The datasheet specifies 184mA continuous drain current at T_A = +70°C with standard FR-4 mounting (2oz copper). This derating reflects thermal limits imposed by R_θJA = 264°C/W; using enhanced copper area (R_θJA = 178°C/W) raises the limit to approximately 230mA at 70°C ambient.

Does BSS123K-13 include built-in ESD protection?

Yes. The device features an integrated ESD protection structure on the gate terminal, qualified to Human Body Model (HBM) Class 2 (>2kV). This eliminates the need for external gate protection diodes in typical low-energy applications such as logic-level switching and gate driving.

Can BSS123K-13 be used in reverse polarity protection circuits?

Yes. When configured as a low-side switch with source tied to ground and load between drain and supply, its body diode blocks reverse current. With V_SD = 0.87V at 0.34A and 100V V_DSS, it supports reverse protection for 12V and 24V systems while minimizing forward voltage drop and power loss.

BSS123K-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 1.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 38 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

BSS123K-13 FAQ

1.How can I place an order for BSS123K-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS123K-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS123K-13 reliable?

The price and inventory of BSS123K-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS123K-13 is usually 5 days.

3.What payment methods are accepted for BSS123K-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS123K-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS123K-13?

BSS123K-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS123K-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS123K-13?

For technical support, including BSS123K-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS123K-13 requirements.

6.How does Aetrix verify that BSS123K-13 is sourced from the original manufacturer or authorized distributors?

All BSS123K-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS123K-13 meets industry standards.

7.What is the process for return or replacement of BSS123K-13?

All BSS123K-13 units undergo pre-shipment inspection (PSI). If there is an issue with BSS123K-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS123K-13 part is unused and in its original packaging.

Return procedure for BSS123K-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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