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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BSS138AKA/LF1R

Name: BSS138AKA/LF1R
Brand: Nexperia USA Inc.
SKU: BSS138AKA/LF1R
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS138AKA/LF1R

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS138AKA/LF1R.pdf

Description:: MOSFET N-CH 60V 200MA TO236AB

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Product details

Overview

BSS138AKA/LF1R from Nexperia is a 60 V, 200 mA single N-channel Trench MOSFET in SOT23 package, optimized for low-threshold switching (V_GS(th) = 0.8–1.5 V), fast turn-on/off (t_d(on) = 5–10 ns, t_f = 22 ns), and AEC-Q101-qualified automotive relay driving and low-side load switching.

For engineers reviewing the BSS138AKA/LF1R datasheet, BSS138AKA/LF1R pinout, BSS138AKA/LF1R application, or BSS138AKA/LF1R equivalent, this page delivers verified electrical specs, thermal derating curves, gate charge behavior, R_DS(on) vs. temperature dependency, and real-world switching performance at 4.5 V and 10 V gate drive - critical for space-constrained, high-reliability signal-path and power-control designs.

Technical Context

This discrete N-channel enhancement-mode MOSFET uses Trench technology to achieve low R_DS(on) (2.7 Ω typ @ V_GS = 10 V, I_D = 100 mA) while maintaining robust ESD protection and stable sub-threshold conduction down to 2.5 V gate drive. Its 1.9 mm pitch SOT23 footprint supports high-density PCB layouts without compromising thermal performance on FR4 with 1 cm² drain pad.

The device operates across –55 °C to +150 °C junction temperature, with normalized R_DS(on) rising to ~2× at 150 °C and gate threshold voltage decreasing linearly with temperature (1.2 V typ @ 25 °C → 0.8 V max @ 150 °C). Safe operating area (SOA) is defined up to 800 mA peak drain current (10 µs pulse) and 60 V V_DS, enabling reliable transient handling in inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; supports 48 V industrial bus and 36 V automotive battery systems with margin.
R_DS(on)	2.7 Ω typ @ V_GS = 10 V, I_D = 100 mA - Enables <100 mW conduction loss at 100 mA, suitable for low-power loadswitching.
V_GS(th)	0.8–1.5 V - Low threshold allows direct interface with 1.8 V/3.3 V logic without level-shifting; ensures turn-on at microcontroller GPIO outputs.
t_d(on)/t_f	5–10 ns / 22 ns - Fast switching minimizes transition losses in PWM-driven LED drivers and digital signal routing.
Q_G(tot)	0.39–0.51 nC - Low gate charge reduces driver IC loading and enables efficient operation with weak gate sources (e.g., MCU pins).
T_j max	150 °C - Junction temperature rating validated per AEC-Q101, supporting under-hood automotive environments.
P_tot	360 mW @ T_amb = 25 °C - Power dissipation limit on standard FR4; derates to zero at ~125 °C ambient per Fig. 1.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, tin-plated terminations, designed for reflow and wave soldering per IPC-7095.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts 0–20 V gate-source voltage; low input capacitance (C_iss = 13–20 pF) minimizes drive energy.
2	S (Source)	Reference node for gate drive and current return path; tied to system ground in low-side switch configurations.
3	D (Drain)	High-side connection point; thermally coupled to PCB copper via exposed pad area (1 cm² recommended); carries switched load current.

Key Features

Feature	Design Value
AEC-Q101 qualified	Stress-tested for automotive reliability (HTOL, TC, UHAST, ESD HBM ≥ 2 kV), enabling use in infotainment, body control, and ADAS subsystems.
Low V_GS(th) variation	0.8–1.5 V range ensures consistent turn-on across temperature and process corners, reducing need for gate bias trimming.
ESD protection	HBM ≥ 2 kV per JESD22-A114 - eliminates need for external TVS in most board-level ESD scenarios.
Thermal resistance R_th(j-a)	350–400 K/W on standard FR4 - enables >100 mW continuous dissipation with minimal heatsinking in compact layouts.
Fast switching with low Q_G	0.39–0.51 nC total gate charge and 6 ns rise time allow clean 10 MHz+ digital switching without overshoot or ringing.

Applications

Automotive Relay Driver

USB Port Power Switch

Use Scenario: Driving 12 V automotive relay coils (e.g., HVAC, lighting, wiper control) from MCU GPIO pins.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current path; turns on/off within 10 ns to suppress back-EMF-induced timing jitter.

Use Value: 0.8–1.5 V V_GS(th) ensures full enhancement at 3.3 V MCU output; 2.7 Ω R_DS(on) limits coil power loss to <100 mW at 100 mA.

Use Scenario: Enabling/disabling VBUS power to USB 2.0 downstream ports in docking stations and embedded hosts.

IC Role / Device Role / Timing Role: Loadswitch isolating upstream 5 V supply; must respond within 100 µs to meet USB enumeration timing.

Use Value: 22 ns fall time and 10 ns turn-off delay ensure rapid fault isolation; AEC-Q101 qualification supports extended-life industrial USB hubs.

High-Speed Logic-Level Translator

Low-Power Sensor Bias Switch

Use Scenario: Level-shifting between 1.8 V I²C master and 3.3 V sensor peripheral using pass-gate configuration.

IC Role / Device Role / Timing Role: Bidirectional signal path controlled by gate bias; requires low C_oss (2.6 pF) to avoid signal distortion.

Use Value: 2.6 pF C_oss and 1.1 pF Crss minimize capacitive loading on 400 kHz I²C bus; 100 mA ID rating supports multi-sensor buses.

Use Scenario: Periodically powering MEMS pressure or temperature sensors in battery-operated IoT nodes to extend shelf life.

IC Role / Device Role / Timing Role: High-impedance off-state switch (<1 µA I_DSS) enabling nanoamp sleep current; activated only during measurement cycles.

Use Value: 1 µA max drain leakage at 60 V and 25 °C ensures <10 nA system standby current; 150 °C T_j rating supports outdoor deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004K-7	R_DS(on) = 3.5 Ω min @ V_GS = 4.5 V; no AEC-Q101 qualification; higher C_iss (25 pF)	Targeted at consumer-grade portable electronics, not automotive or industrial environments	Select when cost is primary constraint and AEC-Q101 compliance is unnecessary; verify SOA at elevated temperature.
2N7002K-T1-GE3	V_GS(th) = 1.0–2.5 V; R_DS(on) = 3.5 Ω typ @ 10 V; lower ESD rating (HBM = 1.5 kV)	General-purpose switching where moderate temperature stability and ESD margin suffice	Choose for non-automotive designs requiring wider V_GS(th) tolerance; confirm gate drive strength matches 2.5 V minimum threshold.

Compared with DMN2004K-7 and 2N7002K-T1-GE3, BSS138AKA/LF1R provides tighter V_GS(th) distribution, superior thermal derating above 85 °C, and guaranteed automotive qualification - making it the preferred choice for safety-critical or high-temperature deployments despite slightly higher unit cost.

Availability

BSS138AKA/LF1R is available at Aetrix Electronics and suitable for automotive relay drivers, USB power switches, high-speed logic translators, and low-power sensor bias circuits requiring stable component supply across production lifecycles.

Supply support for BSS138AKA/LF1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD-protected components.

The BSS138AKA belongs to Nexperia's TrenchMOS portfolio, engineered specifically for low-threshold, fast-switching applications in space-constrained automotive and industrial control systems where gate drive simplicity and thermal robustness are essential.

FAQ

Is BSS138AKA/LF1R suitable for 1.8 V logic-level gate drive?

Yes - its V_GS(th) range of 0.8–1.5 V guarantees turn-on with 1.8 V gate drive, and R_DS(on) remains ≤5.2 Ω at V_GS = 4.5 V and I_D = 100 mA. Measured transfer characteristics (Fig. 10) confirm usable drain current (>10 mA) even at 1.8 V, making it compatible with modern ultra-low-voltage MCUs without external level shifters.

What is the maximum continuous drain current at 100 °C ambient?

Per Table 5, the maximum continuous drain current is 125 mA at T_amb = 100 °C, assuming standard FR4 mounting with 1 cm² drain pad. This reflects thermal derating from the 200 mA rating at 25 °C, governed by R_th(j-a) ≈ 350 K/W and P_tot limit reduction shown in Fig. 1.

Does BSS138AKA/LF1R include an integrated body diode?

Yes - it features a monolithic source-drain diode with V_SD = 0.47–1.2 V at I_S = 115 mA and T_j = 25 °C. This intrinsic diode supports freewheeling in inductive loads (e.g., relays), but reverse recovery time is not specified; external Schottky clamping is recommended for high-frequency switching.

How does the R_DS(on) change with junction temperature?

R_DS(on) increases approximately linearly with temperature: from 2.7 Ω typ at 25 °C to 5.5–9.2 Ω at 150 °C (Table 7). Fig. 11 shows normalized R_DS(on) ≈ 2.0× at 150 °C, confirming predictable thermal drift for design margining in thermally demanding enclosures.

BSS138AKA/LF1R Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250A

Gate Charge (Qg) (Max) @ Vgs:: 0.51 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 20 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.06W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BSS138AKA/LF1R FAQ

1.How can I place an order for BSS138AKA/LF1R through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS138AKA/LF1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS138AKA/LF1R reliable?

The price and inventory of BSS138AKA/LF1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS138AKA/LF1R is usually 5 days.

3.What payment methods are accepted for BSS138AKA/LF1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS138AKA/LF1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS138AKA/LF1R?

BSS138AKA/LF1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS138AKA/LF1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS138AKA/LF1R?

For technical support, including BSS138AKA/LF1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS138AKA/LF1R requirements.

6.How does Aetrix verify that BSS138AKA/LF1R is sourced from the original manufacturer or authorized distributors?

All BSS138AKA/LF1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS138AKA/LF1R meets industry standards.

7.What is the process for return or replacement of BSS138AKA/LF1R?

All BSS138AKA/LF1R units undergo pre-shipment inspection (PSI). If there is an issue with BSS138AKA/LF1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS138AKA/LF1R part is unused and in its original packaging.

Return procedure for BSS138AKA/LF1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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