Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BSS138AKRA-QZ

Part No.:
BSS138AKRA-QZ
Manufacturer:
Nexperia USA Inc.
Category:
FET, MOSFET Arrays
Package:
6-XFDFN Exposed Pad
Datasheet:
AetrixBSS138AKRA-QZ.pdf
Description:
MOSFET 2N-CH 60V 0.32A 6DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,920

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BSS138AKRA-QZ from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in a DFN1412-6 (SOT1268) leadless SMD package, rated for 60 V drain-source voltage, 320 mA continuous drain current per transistor at 25 °C, and 2.2 Ω typical RDS(on) at VGS = 10 V and ID = 100 mA - designed for high-speed low-side switching in automotive and industrial control circuits.

For engineers reviewing the BSS138AKRA-QZ datasheet, BSS138AKRA-QZ pinout, BSS138AKRA-QZ application, or BSS138AKRA-QZ equivalent, this device supports logic-level drive (VGS(th) = 1.1 V typ), offers AEC-Q101 qualification, ESD protection (HBM 500 V), and fast switching with 1 ns turn-on delay and 3 ns fall time - critical for relay drivers and high-speed line interfaces.

Technical Context

This dual discrete MOSFET integrates two independent N-channel channels in a single ultra-small 1.4 mm × 1.2 mm × 0.47 mm thermally enhanced DFN package, with separate source, gate, and drain terminals for each transistor - enabling independent control of two loads without cross-coupling. Its Trench MOSFET architecture delivers low RDS(on) and high transconductance (gfs = 0.3 S typ) at low gate voltages.

The device operates across –55 °C to 150 °C junction temperature, features 500 nA max drain leakage at 60 V and 25 °C, and sustains 3.7 A peak drain current in 10 µs pulses - supporting robust transient handling in automotive load-switching applications where thermal management and reliability under cyclic stress are essential.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum blocking voltage per transistor; enables use in 24 V automotive and 48 V industrial bus systems.
RDS(on) 2.2 Ω (typ) at VGS = 10 V, ID = 100 mA, Tj = 25 °C - Low conduction loss ensures <100 mW power dissipation at 100 mA, reducing thermal load on PCB.
VGS(th) 0.8–1.5 V - Logic-level compatible; fully enhances with standard 1.8 V/3.3 V/5 V microcontroller GPIO outputs.
QG(tot) 0.21–0.315 nC - Enables fast switching with minimal gate drive energy; reduces driver IC loading and propagation delay.
tf 3 ns (max) - Supports >100 MHz digital switching in line drivers and PWM-controlled loads.
Tj max 150 °C - Rated for under-hood automotive environments and sealed industrial enclosures without forced cooling.
ESD HBM 500 V - Integrated protection eliminates need for external TVS diodes in board-level ESD-sensitive zones.

Pinout & Package

Package: DFN1412-6 (SOT1268), 1.4 mm × 1.2 mm × 0.47 mm body, thermally enhanced with exposed drain pad; RoHS-compliant, halogen-free, leadless surface-mount construction.

Pin/Terminal Circuit Role Design Meaning
1 S1 Source terminal for transistor TR1 - connects to system ground or low-side return path for first switched load.
2 G1 Gate terminal for TR1 - driven by MCU GPIO or level-shifter; requires no external pull-down due to integrated ESD protection.
3 D2 Drain terminal for TR2 - connects to second load's high-side supply; shares thermal pad with D1 for improved heat spreading.
4 S2 Source terminal for TR2 - electrically isolated from S1; allows independent grounding of two loads.
5 G2 Gate terminal for TR2 - enables synchronous or asynchronous dual-channel control without shared gate drive impedance.
6 D1 Drain terminal for TR1 - primary high-side connection point for first load; soldered to thermal pad for Rth(j-sp) = 20 K/W.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD - suitable for engine control, body electronics, and ADAS sensor interfaces.
Logic-level gate drive VGS(th) ≤ 1.5 V ensures full enhancement with 1.8 V I/O rails, eliminating level shifters in ultra-low-power IoT node designs.
Ultra-fast switching 1 ns td(on), 3 ns tf - minimizes transition losses in high-frequency PWM (≥500 kHz) for LED dimming and motor phase control.
Thermally optimized DFN Rth(j-sp) = 20 K/W - enables 630 mW total power dissipation on FR4 with standard footprint, reducing need for thermal vias.
Integrated ESD protection HBM rating of 500 V per transistor - protects against ±8 kV contact discharge per IEC 61000-4-2 without external clamping components.

Applications

Automotive Relay Driver Industrial High-Speed Line Driver

Use Scenario: Driving 12 V/24 V electromagnetic relays in vehicle door modules and lighting control units.

IC Role / Device Role / Timing Role: Dual low-side switch controlling coil current paths for two independent relays with synchronized or staggered actuation.

Use Value: 60 V VDS margin prevents avalanche failure during relay coil flyback; 2.2 Ω RDS(on) limits self-heating to <50 mW per channel at 200 mA coil current.

Use Scenario: Transmitting TTL/CMOS signals across noisy factory-floor cables up to 1 m length.

IC Role / Device Role / Timing Role: Active pull-down stage in push-pull line driver configuration, paired with external pull-up resistor.

Use Value: 3 ns fall time ensures <10% signal distortion at 100 Mbps data rates; dual layout allows redundancy or differential signaling.

Low-Side Load Switch (Dual) Power Sequencing Controller

Use Scenario: Enabling/disabling two independent 3.3 V or 5 V peripheral rails (e.g., sensors, communication ICs) in embedded controllers.

IC Role / Device Role / Timing Role: Discrete load switch replacing integrated PMIC channels where independent fault isolation and sequencing are required.

Use Value: Independent S1/G1/D1 and S2/G2/D2 terminals prevent cross-fault propagation; 320 mA per channel supports most MCU peripherals.

Use Scenario: Controlling power-up order of FPGA I/O banks and core voltage domains in test equipment and edge AI modules.

IC Role / Device Role / Timing Role: Precision timing element in RC-delayed gate drive networks, leveraging matched threshold voltage (±0.2 V) between TR1 and TR2.

Use Value: Tight VGS(th) matching (0.8–1.5 V) ensures consistent turn-on timing across both channels, minimizing rail-to-rail skew.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2053UCB4-7 Single-channel, 20 V VDS, 4.5 Ω RDS(on) at 4.5 V - lower voltage rating, higher on-resistance, no AEC-Q101. Not suitable for 24 V automotive systems; limited to 3.3 V/5 V logic-level loads only. Select only for cost-sensitive consumer applications below 12 V with no automotive qualification requirement.
PSMN2R0-30YL Dual-channel, 30 V VDS, 2.0 Ω RDS(on) at 10 V, but non-AEC-Q101 and larger SO8 package - higher thermal resistance (Rth(j-a) = 125 K/W). Lacks automotive qualification and compact size; unsuitable for space-constrained under-hood modules. Prefer for industrial prototypes requiring higher current (1.2 A/channel) where board area and qualification are secondary.

Compared with DMN2053UCB4-7 and PSMN2R0-30YL, the BSS138AKRA-QZ uniquely combines AEC-Q101 qualification, 60 V rating, sub-3 Ω RDS(on), and 1.4 mm × 1.2 mm footprint - making it the only option qualified for dual-channel 24 V automotive load switching in space- and reliability-critical designs.

Availability

BSS138AKRA-QZ is available at Aetrix Electronics and suitable for automotive relay drivers, industrial line drivers, low-side load switches, and power sequencing controllers requiring stable component supply across production lifecycles.

Supply support for BSS138AKRA-QZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic families.

The BSS138AKRA-QZ belongs to Nexperia's AEC-Q101-qualified TrenchMOS dual-FET product line, engineered specifically for space-constrained, high-reliability automotive and industrial switching applications demanding logic-level drive and fast transient response.

FAQ

What is the maximum continuous drain current per channel at 100 °C ambient?

At Tamb = 100 °C, the maximum continuous drain current per transistor is 200 mA, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the DFN1412-6 package on standard FR4 PCBs, where junction temperature must remain ≤150 °C under steady-state operation.

Does BSS138AKRA-QZ include body diode functionality for inductive load freewheeling?

Yes - each N-channel transistor includes an intrinsic source-drain diode with VSD = 1.0–1.6 V at IS = 210 mA and Tj = 25 °C (Table 7). The diode supports freewheeling in relay and solenoid drivers, though reverse recovery time (trr = 7 ns) and recovered charge (Qr = 1 nC) confirm suitability for medium-frequency switching.

Can both transistors be paralleled to increase current capacity?

No - the device is not characterized for parallel operation. Pinout separation (independent S/G/D per transistor) and absence of matching specifications (e.g., RDS(on) tracking, gfs matching) preclude safe current sharing. For higher current, select a single-channel part like PSMN2R0-30YL or use external current-sharing resistors with careful thermal layout.

Is the DFN1412-6 package compatible with standard reflow profiles for lead-free soldering?

Yes - Nexperia specifies compatibility with IPC/JEDEC J-STD-020D reflow profiles. Figure 19 provides the recommended solder paste stencil and land pattern (1.23 mm × 0.43 mm solder lands), and thermal characteristics assume standard reflow on FR4 with tin-plated copper, confirming robust manufacturability in high-volume SMT lines.

BSS138AKRA-QZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-XFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
320mA (Ta)
Rds On (Max) @ Id, Vgs:
2.9Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
315pC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
9pF @ 30V
Power - Max:
420mW (Ta), 5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1412-6

BSS138AKRA-QZ FAQ

1.How can I place an order for BSS138AKRA-QZ through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS138AKRA-QZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS138AKRA-QZ reliable?

The price and inventory of BSS138AKRA-QZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS138AKRA-QZ is usually 5 days.

3.What payment methods are accepted for BSS138AKRA-QZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS138AKRA-QZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS138AKRA-QZ?

BSS138AKRA-QZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS138AKRA-QZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS138AKRA-QZ?

For technical support, including BSS138AKRA-QZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS138AKRA-QZ requirements.

6.How does Aetrix verify that BSS138AKRA-QZ is sourced from the original manufacturer or authorized distributors?

All BSS138AKRA-QZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS138AKRA-QZ meets industry standards.

7.What is the process for return or replacement of BSS138AKRA-QZ?

All BSS138AKRA-QZ units undergo pre-shipment inspection (PSI). If there is an issue with BSS138AKRA-QZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS138AKRA-QZ part is unused and in its original packaging.

Return procedure for BSS138AKRA-QZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSS138AKRA-QZ Tags

  • BSS138AKRA-QZ
  • BSS138AKRA-QZ PDF
  • BSS138AKRA-QZ Datasheet
  • BSS138AKRA-QZ Specifications
  • BSS138AKRA-QZ Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BSS138AKRA-QZ
  • Buy BSS138AKRA-QZ
  • BSS138AKRA-QZ Price
  • BSS138AKRA-QZ Distributor
  • BSS138AKRA-QZ Supplier
  • BSS138AKRA-QZ Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER