Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BSS138BKW-BX

Part No.:
BSS138BKW-BX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-70, SOT-323
Datasheet:
AetrixBSS138BKW-BX.pdf
Description:
MOSFET N-CHANNEL 60V 320MA SC70
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,882

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BSS138BKW-BX from Nexperia is a 60 V, 320 mA N-channel enhancement-mode Trench MOSFET in SOT323 (SC-70) package, designed for low-side switching with logic-level gate drive compatibility (VGS(th) = 0.48–1.6 V), RDS(on) = 1.0–1.6 Ω at VGS = 10 V, and AEC-Q101 qualification for automotive relay drivers and high-speed line interfaces.

For engineers reviewing the BSS138BKW-BX datasheet, BSS138BKW-BX pinout, BSS138BKW-BX application, or BSS138BKW-BX equivalent, this device supports fast-switching (<10 ns rise/fall), ESD-hardened (1.5 kV HBM) operation in space-constrained PCB layouts requiring stable low-RDS(on) performance up to 150 °C junction temperature.

Technical Context

This discrete N-channel MOSFET uses Trench MOSFET technology to achieve low gate charge (QG(tot) = 0.6–0.7 nC) and fast dynamic response (td(on) = 5–10 ns, td(off) = 38–76 ns). Its sub-threshold conduction behavior is characterized down to VGS = 1.25 V, enabling reliable turn-on with 1.8 V/2.5 V logic systems.

The device features an integrated source-drain diode (VSD = 0.47–1.2 V at IS = 300 mA), defined thermal resistance (Rth(j-a) = 350–480 K/W on FR4), and operates across –55 °C to +150 °C ambient, with peak drain current capability of 1.2 A for <10 µs pulses.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum drain-source blocking voltage; supports 48 V automotive bus and industrial 24 V control rails without derating.
ID 320 mA continuous - Rated drain current at Tamb = 25 °C; enables direct driving of small solenoids, LEDs, or logic-level signal paths.
RDS(on) 1.0–1.6 Ω @ VGS = 10 V - Low on-resistance ensures <320 mW conduction loss at full rated current; critical for thermally constrained SOT323 layouts.
VGS(th) 0.48–1.6 V - Gate threshold range guarantees turn-on with 1.8 V, 2.5 V, and 3.3 V microcontroller GPIOs without level-shifting.
QG(tot) 0.6–0.7 nC - Minimal total gate charge reduces driver power demand and enables >1 MHz switching in load-switch applications.
ESD Rating 1.5 kV HBM - Robust electrostatic discharge immunity eliminates need for external protection in assembly and end-use environments.
Tj max 150 °C - Junction temperature limit allows sustained operation in under-hood automotive modules and sealed industrial enclosures.

Pinout & Package

SOT323 (SC-70) plastic surface-mounted package: 1.35 mm × 1.75 mm footprint, 0.65 mm pitch, 0.9 mm height; optimized for reflow soldering with standard land pattern per JEDEC MO-203-AB.

Pin/Terminal Circuit Role Design Meaning
1 - G Gate Control terminal; accepts logic-level input (0–10 V); requires <1 µA leakage current (IGSS) for stable biasing.
2 - S Source Reference node for gate drive and current return path; tied to system ground in low-side switch configurations.
3 - D Drain High-side connection point; carries switched load current; thermally coupled to PCB copper pad for 310 mW dissipation at Tsp = 25 °C.

Key Features

Feature Design Value
Logic-level gate drive Operates fully enhanced from 2.5 V VGS, eliminating external level shifters in 3.3 V MCU-based load switches.
Trench MOSFET architecture Delivers 1.0 Ω RDS(on) in SC-70 package-30% lower than planar equivalents-reducing conduction loss and self-heating.
AEC-Q101 qualification Validated for automotive-grade reliability including HTOL, TC, and ESD stress; suitable for body electronics and infotainment power stages.
Fast switching dynamics 10 ns rise time and 20 ns fall time enable clean edge integrity in 10–50 MHz digital line drivers and PWM dimming circuits.
Integrated source-drain diode Forward voltage 0.47–1.2 V at 300 mA supports freewheeling in inductive load switching without external catch diodes.

Applications

Automotive Relay Driver High-Speed Line Driver

Use Scenario: Driving 12 V/24 V automotive electromagnetic relays in door modules, lighting controls, and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; handles 300–500 mA inductive loads with flyback energy clamping via internal body diode.

Use Value: Eliminates external flyback diode and reduces BOM count; AEC-Q101 rating ensures 15-year field reliability under thermal cycling and vibration.

Use Scenario: Transmitting TTL/CMOS signals across 50 Ω transmission lines in CAN/LIN interface buffers and sensor data links.

IC Role / Device Role / Timing Role: Active pull-down element in open-drain line driver topology; provides sub-10 ns edge control and impedance matching.

Use Value: Enables >20 Mbps data rates with minimal overshoot due to low Ciss (42–56 pF) and fast turn-off delay (38–76 ns).

Low-Side Load Switch Industrial Switching Circuit

Use Scenario: Power sequencing and fault-isolated supply enable for USB peripherals, sensors, and display backlights in portable equipment.

IC Role / Device Role / Timing Role: Controlled power path switch; activated by host MCU GPIO with soft-start behavior governed by gate capacitance (Ciss/Crss).

Use Value: Achieves <1 ms turn-on with 10 kΩ gate resistor; RDS(on) stability over temperature prevents current runaway during hot-plug events.

Use Scenario: Solid-state replacement for mechanical switches in programmable logic controllers (PLCs), motor starters, and HVAC zone controls.

IC Role / Device Role / Timing Role: Discrete power switch handling resistive and mildly inductive loads up to 60 V DC; driven by optocoupler-isolated gate signals.

Use Value: Supports 1.2 A pulsed current for contactor pre-charge; thermal derating curve (Fig 2) enables accurate lifetime estimation in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2004K-7 RDS(on) = 0.85 Ω @ VGS = 4.5 V; higher QG (1.2 nC); SOT-23 package (larger footprint) Preferred where 4.5 V logic drive dominates and board area permits larger SOT-23; less suitable for 2.5 V systems Select when lower RDS(on) at 4.5 V is prioritized over gate charge and package size.
2N7002K-T1-GE3 VGS(th) = 1.0–2.5 V; RDS(on) = 3.5 Ω @ VGS = 4.5 V; no AEC-Q101 qualification Cost-sensitive consumer applications only; not recommended for automotive or mission-critical industrial use Choose only for non-automotive designs where qualification and low RDS(on) are secondary to unit cost.

Compared with DMN2004K-7 and 2N7002K-T1-GE3, BSS138BKW-BX uniquely balances AEC-Q101 compliance, 2.5 V logic compatibility, and ultra-low gate charge in the smallest SC-70 footprint-making it optimal for space- and reliability-constrained automotive signal switching.

Availability

BSS138BKW-BX is available at Aetrix Electronics and suitable for automotive relay drivers, high-speed line drivers, low-side loadswitches, and industrial switching circuits requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BSS138BKW-BX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

The BSS138BKW-BX belongs to Nexperia's AEC-Q101-qualified TrenchMOS portfolio, engineered specifically for robust, space-efficient low-voltage switching in automotive body electronics and industrial control systems.

FAQ

What is the maximum continuous drain current for BSS138BKW-BX at 100 °C ambient?

The maximum continuous drain current is 210 mA at Tamb = 100 °C, as specified in Table 5 (Limiting Values). This derating reflects thermal constraints of the SOT323 package on FR4 PCB with standard footprint, where Rth(j-a) increases significantly above 25 °C ambient.

Does BSS138BKW-BX require a gate resistor for safe switching?

A gate resistor is recommended to control dV/dt and suppress ringing, especially in inductive load applications. Typical values range from 10 Ω to 100 Ω depending on drive strength and layout parasitics; the device's low QG(tot) (0.6–0.7 nC) allows fast switching even with moderate gate resistance.

Can BSS138BKW-BX be used in a high-side switch configuration?

No-it is optimized as a low-side switch. High-side operation would require gate voltage exceeding the drain potential (e.g., bootstrap or charge-pump circuitry), which is incompatible with its logic-level gate design and lack of integrated high-side driver functionality.

Is the source-drain diode suitable for reverse polarity protection?

No-the internal body diode conducts from source to drain (anode at S, cathode at D), making it unsuitable for reverse polarity protection. For that function, an external Schottky or MOSFET-based ideal diode circuit is required.

BSS138BKW-BX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 320mA, 10V
Vgs(th) (Max) @ Id:
1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.7 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
56 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
830mW (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323

BSS138BKW-BX FAQ

1.How can I place an order for BSS138BKW-BX through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS138BKW-BX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS138BKW-BX reliable?

The price and inventory of BSS138BKW-BX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS138BKW-BX is usually 5 days.

3.What payment methods are accepted for BSS138BKW-BX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS138BKW-BX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS138BKW-BX?

BSS138BKW-BX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS138BKW-BX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS138BKW-BX?

For technical support, including BSS138BKW-BX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS138BKW-BX requirements.

6.How does Aetrix verify that BSS138BKW-BX is sourced from the original manufacturer or authorized distributors?

All BSS138BKW-BX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS138BKW-BX meets industry standards.

7.What is the process for return or replacement of BSS138BKW-BX?

All BSS138BKW-BX units undergo pre-shipment inspection (PSI). If there is an issue with BSS138BKW-BX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS138BKW-BX part is unused and in its original packaging.

Return procedure for BSS138BKW-BX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSS138BKW-BX Tags

  • BSS138BKW-BX
  • BSS138BKW-BX PDF
  • BSS138BKW-BX Datasheet
  • BSS138BKW-BX Specifications
  • BSS138BKW-BX Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BSS138BKW-BX
  • Buy BSS138BKW-BX
  • BSS138BKW-BX Price
  • BSS138BKW-BX Distributor
  • BSS138BKW-BX Supplier
  • BSS138BKW-BX Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER