Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated BSS138DWQ-7

Part No.:
BSS138DWQ-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixBSS138DWQ-7.pdf
Description:
MOSFET 2N-CH 50V 0.2A SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,834

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BSS138DWQ from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 50V VDSS, 3.5Ω RDS(ON) at 10V VGS, and 200mA continuous drain current. It delivers low gate threshold (0.5–1.5V), fast switching (tD(ON)/tD(OFF) ≤20ns), and AEC-Q101 qualification for automotive load-switching applications.

For engineers reviewing the BSS138DWQ datasheet, BSS138DWQ pinout, BSS138DWQ application, or BSS138DWQ equivalent, key selection criteria include its dual-channel configuration, 1.4Ω typical RDS(ON) at 10V, ±20V VGSS rating, 50pF Ciss, and IATF 16949 manufacturing compliance - all critical for space-constrained, high-reliability power management designs.

Technical Context

This dual N-channel MOSFET integrates two independent enhancement-mode transistors sharing a common source terminal per channel (SOT363 pinout: S1/D1/G1 + S2/D2/G2). Its low 1.2V typical VGS(TH) enables direct interfacing with 1.8V/3.3V logic, while 25pF Coss and 8pF Crss support efficient high-frequency switching up to several MHz.

The device operates across –55°C to +150°C junction temperature, with RDS(ON) increasing only ~1.8× from 25°C to 150°C at VGS = 10V. Its 200mW power dissipation limit and 625°C/W RθJA are defined on standard FR-4 PCB layout (1" × 0.85"), confirming suitability for thermally constrained board-level integration.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS50V - supports rail voltages up to 45V with 10% margin for transient spikes in automotive and industrial supplies.
RDS(ON) Max3.5Ω @ VGS = 10V - ensures <100mW conduction loss at 200mA, enabling efficient low-power load switching.
VGS(TH)0.5–1.5V - guarantees turn-on with 1.8V GPIOs and robust noise immunity against sub-1V ground bounce.
Ciss50pF - limits gate drive energy to ~0.25µJ per switch cycle at 5V, easing microcontroller-driven control.
tD(ON)/tD(OFF)≤20ns - supports PWM operation beyond 10MHz without significant dead-time penalties.
PD200mW - defines maximum steady-state power handling on standard FR-4; derates linearly above 25°C ambient.
TJ Range–55°C to +150°C - validated for under-hood automotive environments and industrial edge nodes.

Pinout & Package

Package: SOT363 - 6-pin, surface-mount, dual-transistor outline with 0.65mm pitch, 2.15mm × 2.10mm footprint, and 0.95mm height. Molded green compound (UL 94V-0), matte tin terminals, MSL Level 1.

Pin/TerminalCircuit RoleDesign Meaning
1 (G1)Gate of Channel 1Controls turn-on/off of first N-MOSFET; accepts logic-level drive with low 100nA leakage.
2 (S1)Source of Channel 1Common return path for Channel 1; internally tied to Pin 3 in standard SOT363 dual-N configuration.
3 (D1)Drain of Channel 1High-side or low-side switching node; rated for 50V and 200mA pulsed current.
4 (D2)Drain of Channel 2Independent switching node for second channel; electrically isolated from D1 except via PCB routing.
5 (S2)Source of Channel 2Return path for Channel 2; not internally connected to S1 - requires separate PCB trace unless paralleled.
6 (G2)Gate of Channel 2Independent control input; identical VGS(TH) and capacitance as G1 for matched timing.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive use with PPAP capability and IATF 16949 manufacturing - eliminates requalification effort for Tier-1 designs.
Low RDS(ON) at 4.5V2.2Ω typical - enables full 200mA switching from 5V logic rails without gate boosting.
Low Ciss & Crss50pF / 8pF - reduces Miller-induced shoot-through risk and eases gate driver selection for discrete control.
Halogen- & antimony-free<900ppm Br/Cl, <1000ppm Sb - meets global environmental mandates without compromising thermal or electrical performance.
MSL Level 1No floor-life limitation - allows indefinite storage and standard reflow without baking, reducing production overhead.

Applications

USB Port Power SwitchingAutomotive Body Control Module

Use Scenario: Enabling/disabling VBUS power to downstream USB peripherals in laptops or docking stations.

IC Role / Device Role / Timing Role: Dual-channel load switch controlling separate 5V and 3.3V rails with independent enable signals.

Use Value: 3.5Ω RDS(ON) limits voltage drop to <0.7V at 200mA, preserving USB spec compliance; fast 20ns switching prevents glitch during hot-plug detection.

Use Scenario: Driving LED map lights, door lock actuators, and window motor logic in vehicle interior modules.

IC Role / Device Role / Timing Role: Low-side switch for 12V loads, controlled by MCU GPIOs with integrated pull-down to prevent floating gate states.

Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime; –55°C to +150°C operation covers cold-soak to under-dash thermal extremes.

Industrial Sensor Node Power GatingPortable Medical Device Battery Management

Use Scenario: Isolating power to analog front-end ICs (e.g., ADCs, op-amps) during sleep mode in battery-powered IoT sensors.

IC Role / Device Role / Timing Role: Dual-channel high-efficiency power gate, minimizing quiescent current via <0.5µA IDSS and <100nA IGSS.

Use Value: 0.5V minimum VGS(TH) allows wake-up from ultra-low-power comparators; 200mW PD supports brief 500mA peak sensor bursts without thermal shutdown.

Use Scenario: Managing power distribution to display backlight, Bluetooth radio, and diagnostic circuitry in handheld patient monitors.

IC Role / Device Role / Timing Role: Dual independent load switch enabling selective subsystem activation to extend Li-ion battery runtime.

Use Value: 1.4Ω typical RDS(ON) at 10V reduces conduction loss by >40% vs. legacy 5Ω switches, adding ~12 minutes of active use per charge cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2041LSD-13Higher RDS(ON) (4.5Ω @ 4.5V), larger TSOP-6 package (3.05mm × 1.65mm), no AEC-Q101 ratingSuitable for commercial-grade consumer electronics but not automotive systems requiring PPAPSelect when cost is primary constraint and automotive qualification is unnecessary.
NTJD4152PZ-1Lower VDSS (30V), higher Ciss (70pF), same SOT363 footprint and AEC-Q101 gradeBetter for 3.3V/5V logic-only systems; insufficient for 12V automotive supply transientsPrefer for compact 5V-only designs where 50V headroom is not required.

Compared with DMN2041LSD-13 and NTJD4152PZ-1, BSS138DWQ uniquely balances 50V robustness, AEC-Q101 compliance, and SOT363 miniaturization - making it the only option qualified for safety-critical 12V automotive load switching without footprint penalty.

Availability

BSS138DWQ is available at Aetrix Electronics and suitable for automotive body control modules, USB power delivery systems, industrial sensor nodes, and portable medical devices requiring stable component supply across extended product lifecycles.

Supply support for BSS138DWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BSS138DWQ belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for high-reliability, low-voltage load switching in automotive and industrial control systems where space, efficiency, and qualification rigor are non-negotiable.

FAQ

Is BSS138DWQ pin-compatible with the single-channel BSS138?

No. BSS138DWQ uses SOT363 (6-pin dual) packaging with independent gate-source-drain terminals per channel, whereas the single-channel BSS138 is in SOT23-3 (3-pin) format. Pin mapping, footprint, and internal connectivity differ fundamentally - PCB redesign is required for substitution.

What is the maximum safe operating voltage for BSS138DWQ in automotive 12V systems?

BSS138DWQ's 50V VDSS rating supports automotive 12V systems with full transient tolerance: ISO 7637-2 Pulse 5a (load dump up to 40V) and Pulse 5b (clamped to 35V) are safely within margin. Derating to 80% (40V) is recommended for sustained operation near temperature extremes.

Does BSS138DWQ include integrated ESD protection on gate terminals?

No. The datasheet specifies no built-in gate-oxide ESD protection structures. External 10kΩ series resistors and/or TVS diodes are recommended for gate inputs in environments with >2kV HBM risk, especially in automated assembly or field-replaceable modules.

Can both channels be paralleled to increase current capacity?

Yes, but with caveats: matching VGS(TH) (0.5–1.5V range) means gate drive must ensure simultaneous turn-on to avoid current imbalance. At 200mA/channel, paralleling yields ~350mA total before thermal derating dominates - not a true 2× current boost due to RDS(ON) mismatch and shared thermal mass in SOT363.

BSS138DWQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
50V
Current - Continuous Drain (Id) @ 25°C:
200mA
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V
Power - Max:
200mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

BSS138DWQ-7 FAQ

1.How can I place an order for BSS138DWQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS138DWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS138DWQ-7 reliable?

The price and inventory of BSS138DWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS138DWQ-7 is usually 5 days.

3.What payment methods are accepted for BSS138DWQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS138DWQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS138DWQ-7?

BSS138DWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS138DWQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS138DWQ-7?

For technical support, including BSS138DWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS138DWQ-7 requirements.

6.How does Aetrix verify that BSS138DWQ-7 is sourced from the original manufacturer or authorized distributors?

All BSS138DWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS138DWQ-7 meets industry standards.

7.What is the process for return or replacement of BSS138DWQ-7?

All BSS138DWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with BSS138DWQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS138DWQ-7 part is unused and in its original packaging.

Return procedure for BSS138DWQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSS138DWQ-7 Tags

  • BSS138DWQ-7
  • BSS138DWQ-7 PDF
  • BSS138DWQ-7 Datasheet
  • BSS138DWQ-7 Specifications
  • BSS138DWQ-7 Images
  • Diodes Incorporated
  • Diodes Incorporated BSS138DWQ-7
  • Buy BSS138DWQ-7
  • BSS138DWQ-7 Price
  • BSS138DWQ-7 Distributor
  • BSS138DWQ-7 Supplier
  • BSS138DWQ-7 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER