Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BSS139IXTMA1

Part No.:
BSS139IXTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBSS139IXTMA1.pdf
Description:
MOSFET N-CH 250V 100MA SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,988

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BSS139IXTMA1 from Infineon is a depletion-mode N-channel small-signal MOSFET with 250 V drain-source breakdown voltage, 30 Ω maximum RDS(on) at VGS = 0 V, and 30 mA on-state drain current. It operates as a normally-on high-voltage switch in analog signal routing, voltage clamping, and constant-current biasing circuits for industrial sensor interfaces and precision instrumentation.

For engineers reviewing the BSS139IXTMA1 datasheet, BSS139IXTMA1 pinout, BSS139IXTMA1 application, or BSS139IXTMA1 equivalent, key selection criteria include depletion-mode operation, 250 V V(BR)DSS, gate threshold voltage range of −2.1 V to −1.4 V, low gate charge (Qg = 2.3 nC), and SOT-23-3 packaging for space-constrained analog control nodes.

Technical Context

This device is a silicon-based enhancement-depletion MOSFET optimized for linear-mode and switching applications requiring stable conduction without gate drive. Its depletion-mode behavior enables zero-bias turn-on, while its 250 V rating supports high-side sensing and HV bias generation in isolated analog front-ends.

Thermal resistance RthJA = 350 K/W and Ptot = 0.36 W at TA = 25 °C define its power handling in minimal-footprint PCB layouts. The −55 °C to +150 °C operating temperature range and JEDEC JESD47 qualification confirm suitability for industrial-grade embedded systems.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS250 V - Supports direct interface with 200 V DC rails or transient-suppressed industrial bus lines.
RDS(on) max30 Ω at VGS = 0 V - Enables predictable current limiting in self-biased constant-current sources.
ID (continuous)0.08 A at TA = 70 °C - Defines usable current range in ambient-temperature-sensitive analog stages.
VGS(th)−2.1 V to −1.4 V - Confirms reliable depletion-mode turn-off with modest negative gate bias.
Qg2.3 nC - Limits switching loss in low-frequency (<1 MHz) analog switching and sample-hold circuits.
Ciss60 pF - Determines input impedance and bandwidth impact in high-impedance gate-controlled nodes.
Tj range−55 °C to +150 °C - Validates operation across extended industrial temperature profiles without derating.

Pinout & Package

Package: PG-SOT23-3 (JEDEC TO-236AB), surface-mount, halogen-free, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control terminal for depletion-mode channelReceives negative bias (≤ −1.4 V) to fully pinch-off; 0 V yields nominal conduction.
Pin 2 (Source)Reference node for gate voltage and current return pathConnected to system ground or bias reference; defines VGS polarity and current direction.
Pin 3 (Drain)High-voltage output terminalHandles up to 250 V blocking and 0.1 A pulsed current; routed to load or feedback network.

Key Features

FeatureDesign Value
Depletion-mode operationEnables fail-safe "always-on" behavior in power-loss scenarios for bias current mirrors and analog switches.
250 V V(BR)DSSPermits direct integration into 100–200 V industrial sensor excitation circuits without level-shifting.
Low gate leakage (IGSS ≤ 10 nA)Maintains stable gate bias over time in high-impedance bias networks and precision current sources.
JEDEC JESD47 qualifiedGuarantees reliability under thermal cycling, humidity, and mechanical stress in industrial control modules.
Halogen-free & RoHS-compliantMeets environmental compliance requirements for global industrial equipment and medical instrumentation.

Applications

High-Voltage Analog SwitchingPrecision Constant-Current Source

Use Scenario: Routing analog signals between multiple sensor inputs in a 200 V-rated industrial data acquisition module.

IC Role / Device Role / Timing Role: Depletion-mode MOSFET acting as a normally-on analog switch controlled by gate bias to enable/disable signal paths.

Use Value: Eliminates need for external pull-up resistors or active gate drivers, reducing component count and board area.

Use Scenario: Providing stable 30 mA bias current to a high-precision op-amp input stage in a 4–20 mA transmitter.

IC Role / Device Role / Timing Role: Self-biased current source using fixed VGS and RDS(on) to set ID without feedback components.

Use Value: Achieves ±2% current accuracy over −40 °C to +85 °C due to matched VGS(th) and low tempco RDS(on).

Voltage Clamp ProtectionHigh-Side Sensing Bias

Use Scenario: Clamping transient overvoltage spikes on a 120 V AC line monitor input before ADC sampling.

IC Role / Device Role / Timing Role: Fast-acting clamp diode replacement using intrinsic body diode and controlled RDS(on) conduction.

Use Value: Limits clamped voltage to <250 V with sub-10 ns response, preserving downstream protection IC integrity.

Use Scenario: Generating a regulated high-side bias voltage for an isolated current sense amplifier in motor drive feedback.

IC Role / Device Role / Timing Role: Depletion-mode pass element in a floating Zener-regulated bias generator.

Use Value: Delivers stable 15 V @ 10 mA from a 200 V rail with <1% regulation error across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar depletion-mode N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2004LK3-7V(BR)DSS = 200 V, RDS(on) = 40 Ω, SOT-23 packageLimited to ≤200 V systems; higher on-resistance increases conduction loss in current sources.Prefer when lower cost outweighs 50 V headroom and tighter RDS(on) tolerance.
BS170V(BR)DSS = 60 V, RDS(on) = 5 Ω, TO-92 packageNot suitable for >100 V applications; through-hole mounting limits density in modern PCBs.Select only for legacy low-voltage designs where footprint and voltage margin are non-critical.

Compared with DMN2004LK3-7 and BS170, BSS139IXTMA1 uniquely delivers 250 V capability in SOT-23 with verified industrial qualification, making it the sole option for compact, high-reliability depletion-mode switching above 200 V.

Availability

BSS139IXTMA1 is available at Aetrix Electronics and suitable for industrial sensor interfaces, precision current sources, high-voltage analog switching, and voltage clamp protection requiring stable component supply and long-term manufacturability.

Supply support for BSS139IXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The BSS139I belongs to Infineon's industrial-qualified small-signal MOSFET product line, designed specifically for high-voltage analog signal conditioning, biasing, and protection in harsh-environment instrumentation and automation systems.

FAQ

Is BSS139IXTMA1 a depletion-mode or enhancement-mode MOSFET?

BSS139IXTMA1 is a depletion-mode N-channel MOSFET. It conducts at VGS = 0 V and requires a negative gate-source voltage (≤ −1.4 V) to turn off. This behavior is confirmed by its VGS(th) range of −2.1 V to −1.4 V and specified ID = 30 mA at VGS = 0 V per Infineon's datasheet Table 4.

What is the maximum continuous drain current at 70 °C ambient?

The maximum continuous drain current for BSS139IXTMA1 is 0.08 A at TA = 70 °C, as specified in Table 2 of the Infineon datasheet. This value reflects thermal derating from the 0.10 A rating at 25 °C and must be observed to maintain junction temperature below 150 °C in standard SOT-23 mounting conditions.

Can BSS139IXTMA1 replace BS170 in existing designs?

No - BSS139IXTMA1 is not a drop-in replacement for BS170. While both are N-channel depletion-mode MOSFETs, BSS139IXTMA1 has 250 V V(BR)DSS versus BS170's 60 V, and its RDS(on) is 12.5–30 Ω versus BS170's ~5 Ω. Substituting it may cause overvoltage failure in low-voltage circuits or excessive conduction loss in high-current paths.

Does BSS139IXTMA1 include integrated ESD protection?

Yes - BSS139IXTMA1 is rated Class 0 (<250 V) per JESD22-A114 (HBM), indicating very low inherent ESD tolerance. External protection (e.g., series resistor + TVS) is required in handling and PCB layout. Its qualification does not imply built-in robust ESD structures; rather, it specifies sensitivity level for process control and handling guidance.

BSS139IXTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel, Depletion Mode
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
250 V
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
0V, 10V
Rds On (Max) @ Id, Vgs:
14Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:
1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs:
2.3 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
60 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
360mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23-3-5

BSS139IXTMA1 FAQ

1.How can I place an order for BSS139IXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS139IXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS139IXTMA1 reliable?

The price and inventory of BSS139IXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS139IXTMA1 is usually 5 days.

3.What payment methods are accepted for BSS139IXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS139IXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS139IXTMA1?

BSS139IXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS139IXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS139IXTMA1?

For technical support, including BSS139IXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS139IXTMA1 requirements.

6.How does Aetrix verify that BSS139IXTMA1 is sourced from the original manufacturer or authorized distributors?

All BSS139IXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS139IXTMA1 meets industry standards.

7.What is the process for return or replacement of BSS139IXTMA1?

All BSS139IXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS139IXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS139IXTMA1 part is unused and in its original packaging.

Return procedure for BSS139IXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSS139IXTMA1 Tags

  • BSS139IXTMA1
  • BSS139IXTMA1 PDF
  • BSS139IXTMA1 Datasheet
  • BSS139IXTMA1 Specifications
  • BSS139IXTMA1 Images
  • Infineon Technologies
  • Infineon Technologies BSS139IXTMA1
  • Buy BSS139IXTMA1
  • BSS139IXTMA1 Price
  • BSS139IXTMA1 Distributor
  • BSS139IXTMA1 Supplier
  • BSS139IXTMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER