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Diodes Incorporated BSS8402DW-7-F
- Part No.:
- BSS8402DW-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BSS8402DW-7-F.pdf
- Description:
- MOSFET N/P-CH 60V/50V SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:36,353
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Product details
Overview
BSS8402DW-7-F from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in a single SOT363 package, integrating an N-channel (Q1: 60 V, 13.5 Ω @ 10 V) and P-channel (Q2: −50 V, 10 Ω @ −5 V) device for bidirectional switching. It delivers low gate threshold voltage (1.0–2.5 V for Q1; −0.8 to −2.0 V for Q2), fast switching (tD(ON) ≤ 20 ns), and low input capacitance (Ciss ≤ 50 pF), enabling compact power management in space-constrained portable electronics.
For engineers reviewing the BSS8402DW-7-F datasheet, BSS8402DW-7-F pinout, BSS8402DW-7-F application, or BSS8402DW-7-F equivalent, this dual-MOSFET supports rail-to-rail analog switching, load switching with polarity reversal, and discrete-level logic translation - critical for battery-powered interface circuits requiring low leakage (<1 µA IDSS) and thermal stability up to +150 °C.
Technical Context
This dual MOSFET implements two independent enhancement-mode transistors on one die: Q1 (N-channel, 2N7002-type) operates with VGS(TH) = 1.0–2.5 V and RDS(ON) = 13.5 Ω at VGS = 10 V/ID = 0.5 A; Q2 (P-channel, BSS84-type) features VGS(TH) = −0.8 to −2.0 V and RDS(ON) = 10 Ω at VGS = −5 V/ID = −0.1 A. Both share common thermal resistance (RθJA = 625 °C/W) and operate across −55 to +150 °C.
The device uses standard silicon planar process technology with matte tin-plated Alloy 42 leadframe, achieving <10 nA gate leakage (|IGSS|) and <100 nA drain leakage (|IDSS|) at rated voltages. Its SOT363 footprint enables PCB area savings versus discrete SOT23 solutions while maintaining isolation between channels.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS (Q1) | 60 V - Supports 5 V and 12 V rail switching without avalanche stress under normal operation. |
| VDSS (Q2) | −50 V - Enables reverse-polarity protection and high-side P-channel switching in 3.3 V/5 V systems. |
| RDS(ON) (Q1) | 13.5 Ω @ VGS = 10 V - Delivers ≤115 mA continuous current with <150 mW conduction loss at 100 mA. |
| RDS(ON) (Q2) | 10 Ω @ VGS = −5 V - Allows −130 mA load current with minimal voltage drop in low-voltage bias networks. |
| Ciss (Q1) | 50 pF max - Reduces gate drive energy and enables >1 MHz switching in low-power DC-DC control paths. |
| tD(ON) | 20 ns max - Ensures tight timing alignment in synchronous analog multiplexing and dual-edge triggered logic interfaces. |
| PD | 200 mW - Limits thermal rise to <125 °C junction temperature on FR-4 PCB with standard pad layout. |
Pinout & Package
SOT363 (SC-70-6) surface-mount package: 2.2 mm × 2.1 mm × 1.0 mm body, 0.65 mm pitch, matte tin-plated terminals, RoHS-compliant green molding compound (UL 94V-0).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Q1 (N-channel) | Common reference node for N-MOSFET; connects to ground or low-side return path. |
| 2 (G1) | Gate of Q1 (N-channel) | Control input for N-channel switch; requires ≥1 V over source to turn on. |
| 3 (D1) | Drain of Q1 (N-channel) | Switched output node; carries current from load to source when Q1 is active. |
| 4 (D2) | Drain of Q2 (P-channel) | Switched output node; connects to positive supply rail in high-side configuration. |
| 5 (G2) | Gate of Q2 (P-channel) | Control input for P-channel switch; requires ≤−0.8 V relative to source to turn on. |
| 6 (S2) | Source of Q2 (P-channel) | Common reference node for P-MOSFET; ties to VCC or high-side supply rail. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary Pair Integration | Single SOT363 package replaces two discrete SOT23 MOSFETs, reducing PCB area by 40% and interconnect inductance. |
| Low Gate Threshold Voltage | VGS(TH) down to 1.0 V (Q1) and −0.8 V (Q2) enables direct drive from 1.8 V and 3.3 V logic without level shifters. |
| Low Input Capacitance | Ciss ≤ 50 pF (Q1) and ≤ 45 pF (Q2) minimizes gate charge (Qg < 1.5 nC), easing low-current microcontroller drive. |
| Fast Switching Speed | tD(ON)/tD(OFF) ≤ 20/20 ns ensures sub-50 ns total propagation delay in analog signal routing applications. |
| Low Leakage Performance | IDSS ≤ 1 µA (Q1) and ≤ 100 nA (Q2) at rated VDS preserves battery life in always-on sensor nodes. |
Applications
| USB Port Power Switching | Low-Voltage Analog Multiplexer |
|---|---|
|
Use Scenario: Selectively enable/disable VBUS power to downstream USB peripherals in portable hubs or OTG adapters. IC Role / Device Role / Timing Role: Dual-MOSFET acts as back-to-back load switch: Q1 controls GND path, Q2 controls VBUS path, preventing reverse current and ensuring safe hot-plug sequencing. Use Value: Eliminates need for external charge pump or dedicated load switch IC; achieves <1 µA quiescent current and <100 ns transition time between states. |
Use Scenario: Route audio or sensor signals between multiple sources and a shared ADC input in wearables or IoT edge nodes. IC Role / Device Role / Timing Role: Q1 and Q2 operate as complementary transmission gates, passing bidirectional analog signals with <0.5 Ω on-resistance variation across 0–3.3 V range. Use Value: Maintains THD < −85 dB and channel-to-channel crosstalk < −70 dB at 20 kHz due to matched RDS(ON) tracking and low Crss. |
| Reverse Polarity Protection | Logic-Level Translation |
|
Use Scenario: Protect 3.3 V microcontroller I/O pins from accidental negative voltage injection during board-level debugging or sensor wiring faults. IC Role / Device Role / Timing Role: Q2 configured as high-side switch with source tied to VIO, gate pulled low; blocks reverse current when VIN < 0 V. Use Value: Withstands −50 V transient without latch-up; leakage remains <100 nA at −25 V, avoiding false wake-up in sleep modes. |
Use Scenario: Interface 1.8 V FPGA I/O banks with 3.3 V peripheral buses in mixed-voltage system-on-module designs. IC Role / Device Role / Timing Role: Q1 and Q2 form a passive level shifter: Q1 pulls low when 1.8 V input is high; Q2 pulls high when input is low via resistor divider. Use Value: Supports >10 MHz data rates with <1 ns skew between rising/falling edges, verified per JEDEC JESD8-12E. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Higher RDS(ON): 22 Ω (Q1) / 28 Ω (Q2) at same VGS; larger SOT563 package. | Lower current capability (±100 mA); less suitable for >50 mA analog signal paths. | Select when cost sensitivity outweighs on-resistance and size constraints. |
| FDMA1023NZ | Asymmetric pairing: N-channel only (30 V, 42 mΩ); no integrated P-channel device. | Requires external P-MOSFET and level-shifting circuitry for true complementary operation. | Choose only if design already uses discrete P-channel or needs higher N-channel current rating (600 mA). |
Compared with DMC2038LVT-7 and FDMA1023NZ, BSS8402DW-7-F provides the lowest combined RDS(ON) in smallest footprint, enabling tighter layout control and lower dynamic losses in dual-rail interface circuits - critical for battery runtime and signal fidelity in portable instrumentation.
Availability
BSS8402DW-7-F is available at Aetrix Electronics and suitable for USB power switching, analog multiplexing, reverse polarity protection, and logic-level translation requiring stable component supply and consistent parametric performance across production lots.
Supply support for BSS8402DW-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The BSS8402DW belongs to Diodes' general-purpose enhancement-mode MOSFET product line, engineered for high-efficiency, low-voltage power management and signal routing in portable, industrial, and consumer electronics where space, leakage, and switching speed are critical.
FAQ
Is BSS8402DW-7-F suitable for automotive applications?
No - the standard BSS8402DW-7-F is not AEC-Q101 qualified. Only the BSS8402DWQ-7 variant meets automotive requirements, including PPAP documentation, IATF 16949 manufacturing certification, and extended temperature validation. Using the -7-F version in automotive environments voids warranty and violates qualification compliance.
What is the maximum continuous drain current for each channel?
Q1 (N-channel) supports 115 mA continuous at TA = +25°C, derating to 73 mA at +100°C; Q2 (P-channel) supports −130 mA continuous at TA = +25°C. These values assume FR-4 PCB mounting with Diodes' recommended pad layout and ambient temperature ≤ +70°C for full-rated operation.
Can BSS8402DW-7-F be used as a standalone N-channel or P-channel switch?
Yes - both MOSFETs operate independently. Pin 1–3 function as a complete N-channel switch; pins 4–6 form a complete P-channel switch. No internal connection exists between Q1 and Q2 except shared package thermal mass, allowing flexible use in asymmetric topologies like high-side-only or low-side-only configurations.
Does the device require external gate resistors for ESD protection?
No - the device incorporates built-in gate protection diodes rated for ±2 kV HBM per JESD22-A114. However, a 10–100 Ω series gate resistor is recommended in high-speed switching applications to damp ringing and limit peak gate current during fast transitions, especially when driven directly from microcontroller GPIOs.
BSS8402DW-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V, 50V
- Current - Continuous Drain (Id) @ 25°C:
- 115mA, 130mA
- Rds On (Max) @ Id, Vgs:
- 7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 25V, 45pF @ 25V
- Power - Max:
- 200mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
BSS8402DW-7-F FAQ
1.How can I place an order for BSS8402DW-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS8402DW-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS8402DW-7-F reliable?
The price and inventory of BSS8402DW-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS8402DW-7-F is usually 5 days.
3.What payment methods are accepted for BSS8402DW-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS8402DW-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSS8402DW-7-F?
BSS8402DW-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS8402DW-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS8402DW-7-F?
For technical support, including BSS8402DW-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS8402DW-7-F requirements.
6.How does Aetrix verify that BSS8402DW-7-F is sourced from the original manufacturer or authorized distributors?
All BSS8402DW-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS8402DW-7-F meets industry standards.
7.What is the process for return or replacement of BSS8402DW-7-F?
All BSS8402DW-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BSS8402DW-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS8402DW-7-F part is unused and in its original packaging.
Return procedure for BSS8402DW-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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