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Diodes Incorporated BSS8402DW-7-G
- Part No.:
- BSS8402DW-7-G
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BSS8402DW-7-G.pdf
- Description:
- MOSFET N/P-CH 60V/50V SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:4,558
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Product details
Overview
BSS8402DW-7-G from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in SOT363 package, integrating an N-channel (60 V, 13.5 Ω @ 10 V) and P-channel (−50 V, 10 Ω @ −5 V) device for bidirectional switching. It delivers low gate threshold voltage (1.0–2.5 V for Q1, −0.8 to −2.0 V for Q2), fast switching (tD(ON) ≤ 20 ns), and low input capacitance (Ciss = 22–45 pF), enabling compact power management in space-constrained portable electronics.
For engineers reviewing the BSS8402DW-7-G datasheet, BSS8402DW-7-G pinout, BSS8402DW-7-G application, or BSS8402DW-7-G equivalent, key selection criteria include verified complementary RDS(ON) matching, thermal resistance (RθJA = 625 °C/W), leakage performance (IDSS ≤ 1 µA at +25°C), and RoHS/Green compliance with lead-free matte tin plating.
Technical Context
This dual MOSFET uses discrete silicon die in a single SOT363 package with isolated internal connections-Q1 (N-channel) and Q2 (P-channel) share no internal node. Gate drive is independent: Q1 requires positive VGS (±20 V max), Q2 requires negative VGS (±20 V max), supporting push-pull or H-bridge control topologies without level-shifting circuitry.
Thermal design relies on FR-4 PCB mounting per Diodes' recommended pad layout (1" × 0.85"), delivering 200 mW total power dissipation. Junction temperature range (−55°C to +150°C) and low RDS(ON) drift over temperature (≤4.4 Ω at +125°C for Q1) support stable operation in industrial ambient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS (Q1/Q2) | 60 V / −50 V: Supports rail-to-rail switching across 3.3 V to 24 V logic-controlled power domains. |
| RDS(ON) (Q1/Q2) | 13.5 Ω @ 10 V / 10 Ω @ −5 V: Enables ≥115 mA N-ch and ≥130 mA P-ch continuous current with <150 mW conduction loss at rated ID. |
| VGS(TH) (Q1/Q2) | 1.0–2.5 V / −0.8 to −2.0 V: Compatible with 3.3 V microcontroller GPIOs without external level shifters. |
| Ciss (Q1/Q2) | 22–50 pF / 45 pF: Minimizes gate drive energy and enables >1 MHz switching in low-power DC-DC stages. |
| tD(ON)/tD(OFF) | 7–20 ns / 11–20 ns (Q1), 10–18 ns (Q2): Reduces transition losses in high-frequency load switching applications. |
| PD & RθJA | 200 mW / 625 °C/W: Limits junction rise to ≤125°C at 150 mW ambient dissipation on standard FR-4. |
Pinout & Package
SOT363 (SC-88) surface-mount package: 6-pin, 2.15 mm × 2.10 mm × 0.95 mm body, matte tin-plated Alloy 42 leadframe, UL 94V-0 molding compound, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | N-channel source | Reference node for Q1; tied to ground or low-side return path in half-bridge configurations. |
| 2 (G1) | N-channel gate | Control input for Q1; requires ≥1.0 V above S1 to turn on; sensitive to ESD (IGSS ≤ ±10 nA). |
| 3 (D1) | N-channel drain | High-side output for Q1; connects to load or supply rail; rated for 60 V repetitive blocking. |
| 4 (D2) | P-channel drain | High-side output for Q2; connects to same rail as D1 in complementary switch pairs. |
| 5 (G2) | P-channel gate | Control input for Q2; requires ≤ −0.8 V below S2 to turn on; polarity-critical for correct biasing. |
| 6 (S2) | P-channel source | Reference node for Q2; typically tied to VCC or high-side rail; isolates Q1 and Q2 source paths. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary channel pairing | Single-package integration of matched N- and P-channel MOSFETs eliminates board-level layout mismatch and timing skew. |
| Low gate threshold voltage | VGS(TH) window allows direct drive from 3.3 V logic while maintaining noise margin against false turn-on. |
| Low input/output leakage | IDSS ≤ 1 µA (Q1) and ≤ −1 µA (Q2) at 25°C ensures minimal standby current in battery-powered systems. |
| Lead-free & Green construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and industrial environmental mandates. |
Applications
| USB Port Power Switching | Load Switch for IoT Sensor Node |
|---|---|
Use Scenario: Enabling/disabling 5 V USB VBUS to peripheral devices under MCU control to prevent backfeed and manage inrush. IC Role / Device Role / Timing Role: Dual-channel load switch: Q1 controls GND path (low-side), Q2 controls VBUS path (high-side) in OR-ing configuration. Use Value: Simultaneous turn-on/off reduces cross-conduction risk; RDS(ON) matching ensures balanced current sharing and <10 µs transition time. | Use Scenario: Isolating 3.3 V sensor supply during deep-sleep mode to reduce system quiescent current below 1 µA. IC Role / Device Role / Timing Role: High-side P-ch switch (Q2) disconnects VDD; N-ch (Q1) grounds enable line or provides reverse-polarity protection. Use Value: Sub-µA IDSS and low VGS(TH) allow full shutdown with zero GPIO overhead; SOT363 footprint saves >40% board area vs. discrete solutions. |
| Level-Shifterless GPIO Expansion | Compact H-Bridge for Microactuator |
Use Scenario: Driving 5 V logic peripherals (e.g., display backlight, EEPROM) from 3.3 V MCU pins without external level translators. IC Role / Device Role / Timing Role: Complementary pair acts as active pull-up/pull-down buffer: Q2 pulls high, Q1 pulls low on shared signal line. Use Value: Eliminates need for discrete level-shifter ICs; Ciss symmetry ensures matched rise/fall times (<15 ns skew) for clean digital edges. | Use Scenario: Bidirectional current control for piezoelectric or solenoid microactuators in medical wearables requiring <2 mm² board area. IC Role / Device Role / Timing Role: Half-bridge driver: Q1 and Q2 form one leg; second identical pair (or external FETs) complete full H-bridge. Use Value: Matched RDS(ON) and fast tD enable precise 100 kHz PWM control with <5% duty-cycle distortion; thermal resistance supports 100% duty in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038UVT-7 | Higher RDS(ON): 18 Ω / 22 Ω @ 4.5 V; lower VDSS: 20 V / −20 V; smaller 1.6 mm × 1.6 mm package. | Limited to ≤3.3 V systems; unsuitable for 5 V+ rail switching or industrial voltage transients. | Select when board area is critical and operating voltage stays below 3.3 V; verify gate drive compatibility with reduced VGS(TH) spread. |
| NTLJD3119PZ-1G | Asymmetric rating: 30 V N-ch / −20 V P-ch; higher leakage (IDSS ≤ 10 µA); no AEC-Q101 variant. | Not qualified for automotive; lacks thermal stability data above +105°C; less robust for industrial ambient cycling. | Choose only for cost-sensitive consumer designs where AEC-Q101 and extended temperature operation are not required. |
Compared with DMC2038UVT-7 and NTLJD3119PZ-1G, BSS8402DW-7-G offers superior voltage headroom (60 V/−50 V), tighter RDS(ON) matching, and certified green/lead-free construction-making it optimal for industrial power sequencing and automotive-adjacent portable equipment.
Availability
BSS8402DW-7-G is available at Aetrix Electronics and suitable for USB power delivery, IoT sensor node load switching, GPIO expansion, and microactuator H-bridge applications requiring stable component supply, long-term lifecycle assurance, and RoHS/Green compliance.
Supply support for BSS8402DW-7-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.
The BSS8402DW belongs to Diodes' precision small-signal MOSFET product line, engineered for space-constrained power management in portable, industrial, and automotive-qualified systems where complementary switching, low leakage, and thermal reliability are essential.
FAQ
What is the maximum continuous drain current for each channel at +100°C?
At +100°C ambient, the N-channel (Q1) supports 73 mA continuous drain current, and the P-channel (Q2) supports 130 mA. These values reflect derating from the +25°C ratings (115 mA and −130 mA) due to thermal limits imposed by the 625 °C/W junction-to-ambient resistance and 200 mW power dissipation ceiling on FR-4 PCB.
Can BSS8402DW-7-G be used in automotive applications?
The BSS8402DW-7-G is not AEC-Q101 qualified; only the BSS8402DWQ-7 variant carries that qualification. While the base part shares the same die and SOT363 package, it lacks PPAP documentation, IATF 16949-certified manufacturing traceability, and change-control processes required for automotive use. Use BSS8402DWQ-7 for automotive designs.
How is thermal performance affected by PCB layout?
Thermal resistance (RθJA = 625 °C/W) assumes Diodes' recommended SOT363 pad layout on 1" × 0.85" FR-4 with specified copper area. Reducing copper pour or using thinner PCBs increases RθJA by up to 200 °C/W, risking junction temperatures exceeding +150°C at 150 mW dissipation. Thermal vias under exposed pads are not recommended per datasheet guidelines.
What is the gate charge requirement for 1 MHz switching?
Gate charge is not directly specified, but Ciss (22–50 pF for Q1, 45 pF for Q2) and VGS(TH) (1.0–2.5 V / −0.8 to −2.0 V) indicate typical QG ≈ 0.5–1.2 nC per channel. At 1 MHz, average gate drive current is ~0.6–1.2 mA per channel-achievable with standard MCU GPIOs or low-power drivers without external buffers.
BSS8402DW-7-G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V, 50V
- Current - Continuous Drain (Id) @ 25°C:
- 115mA (Ta), 130mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA, 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 25V, 45pF @ 25V
- Power - Max:
- 200mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
BSS8402DW-7-G FAQ
1.How can I place an order for BSS8402DW-7-G through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS8402DW-7-G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS8402DW-7-G reliable?
The price and inventory of BSS8402DW-7-G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS8402DW-7-G is usually 5 days.
3.What payment methods are accepted for BSS8402DW-7-G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS8402DW-7-G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSS8402DW-7-G?
BSS8402DW-7-G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS8402DW-7-G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS8402DW-7-G?
For technical support, including BSS8402DW-7-G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS8402DW-7-G requirements.
6.How does Aetrix verify that BSS8402DW-7-G is sourced from the original manufacturer or authorized distributors?
All BSS8402DW-7-G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS8402DW-7-G meets industry standards.
7.What is the process for return or replacement of BSS8402DW-7-G?
All BSS8402DW-7-G units undergo pre-shipment inspection (PSI). If there is an issue with BSS8402DW-7-G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS8402DW-7-G part is unused and in its original packaging.
Return procedure for BSS8402DW-7-G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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