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Diodes Incorporated BSS8402DWQ-13
- Part No.:
- BSS8402DWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BSS8402DWQ-13.pdf
- Description:
- MOSFET N/P-CH 60V/50V SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:5,008
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Product details
Overview
BSS8402DWQ-13 from Diodes Incorporated is a complementary pair enhancement-mode MOSFET in SOT363 package, integrating an N-channel (60 V, 13.5 Ω @ VGS = 10 V, 115 mA) and P-channel (−50 V, 10 Ω @ VGS = −5 V, −130 mA) device on one die. It delivers low RDS(ON), fast switching, and AEC-Q101 qualification for automotive power management.
For engineers reviewing the BSS8402DWQ-13 datasheet, BSS8402DWQ-13 pinout, BSS8402DWQ-13 application, or BSS8402DWQ-13 equivalent, key selection criteria include complementary channel pairing, gate threshold voltage matching (1.0–2.5 V / −0.8–−2.0 V), thermal resistance (625 °C/W), and automotive-grade reliability under IATF 16949 manufacturing.
Technical Context
This dual-MOSFET integrates discrete N-channel (2N7002-type) and P-channel (BSS84-type) structures with independent gate control, enabling bidirectional switching and level-shifting in compact space-constrained designs. Its matched VGS(TH) spread (±0.5 V typical) supports synchronous operation in half-bridge or load-switch configurations.
The device uses silicon die bonding in a single SOT363 leadframe with isolated source terminals and shared drain connections per channel. Thermal performance is defined for FR-4 PCB mounting (1″ × 0.85″ pad layout), with RθJA = 625 °C/W limiting continuous power dissipation to 200 mW at +25°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS (N) | 60 V - Supports 24 V automotive rail switching with 2.5× safety margin |
| VDSS (P) | −50 V - Enables reverse-polarity protection up to −36 V nominal systems |
| RDS(ON) (N) | 13.5 Ω @ VGS = 10 V - Delivers ≤1.3 W conduction loss at 115 mA full-load current |
| RDS(ON) (P) | 10 Ω @ VGS = −5 V - Allows direct microcontroller-level drive without external level shifters |
| Ciss (N) | 50 pF max - Limits gate drive energy to <0.25 µJ per switch cycle at 10 V |
| tD(ON) | 20 ns max (N), 10 ns max (P) - Supports >10 MHz digital switching in signal routing applications |
| TJ Range | −55°C to +150°C - Validated for under-hood automotive environments per AEC-Q101 stress testing |
Pinout & Package
SOT363 surface-mount package with 6-pin configuration (2×3 array), molded green plastic housing (UL 94V-0), matte tin-plated alloy 42 leadframe, and moisture sensitivity level 1. Weight: 0.006 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | N-channel source | Reference node for N-MOS logic-level switching; tied to ground in high-side load switch |
| 2 (G1) | N-channel gate | Control input requiring ≥1.0 V threshold; compatible with 1.8–5 V GPIO |
| 3 (D1) | N-channel drain | Switched output node; shares internal connection with Pin 4 (D2) in some layouts |
| 4 (D2) | P-channel drain | Shared drain node with Q1 in common-drain configuration; used for bidirectional current path |
| 5 (G2) | P-channel gate | Inverted control input; driven low to turn on P-MOS; threshold −0.8 to −2.0 V |
| 6 (S2) | P-channel source | Reference node for P-MOS; connected to positive rail in high-side switch topology |
Key Features
| Feature | Design Value |
|---|---|
| Complementary channel pairing | Single-package integration of matched N+P MOSFETs eliminates board layout mismatch and timing skew |
| Low gate threshold voltage | VGS(TH) = 1.0–2.5 V (N) and −0.8–−2.0 V (P) enables direct MCU GPIO control without level shifters |
| Low input capacitance | Ciss ≤50 pF (N), ≤45 pF (P) reduces gate drive power and EMI in high-frequency switching |
| AEC-Q101 qualification | Validated for automotive use including temperature cycling, HTRB, and ESD (HBM ≥2 kV) |
| Green construction | Halogen- and antimony-free, RoHS 3 compliant (≤900 ppm Br/Cl, ≤1000 ppm Sb), lead-free plating |
Applications
| Automotive Body Control Module | USB Port Power Switching |
|---|---|
|
Use Scenario: Controlling 12 V accessory loads (e.g., interior lighting, mirror heaters) via CAN-linked microcontroller. IC Role / Device Role / Timing Role: Dual-channel load switch providing reverse-polarity protection (P-MOS) and ground-referenced switching (N-MOS). Use Value: Eliminates need for separate discrete MOSFETs and external gate resistors, reducing BOM count by 2 components per channel. |
Use Scenario: Enabling/disabling VBUS power to USB Type-A ports in infotainment head units. IC Role / Device Role / Timing Role: Bidirectional current path controller with fast turn-on (<20 ns) to meet USB 2.0 suspend/resume timing. Use Value: Low RDS(ON) (10 Ω P-ch) limits voltage drop to <1.3 V at 130 mA, preserving VBUS regulation margin. |
| Industrial Sensor Interface | Portable Medical Device Power Sequencing |
|
Use Scenario: Isolating analog sensor supply rails (3.3 V, 5 V) from microcontroller during sleep mode. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤1 µA) complementary switch enabling rail shutdown with <10 nA quiescent current. Use Value: Extends battery life in wireless sensor nodes by reducing standby power by >95% vs. resistor-based pull-downs. |
Use Scenario: Sequencing power delivery to ADC, RF transceiver, and display subsystems in handheld diagnostics tools. IC Role / Device Role / Timing Role: Precision-controlled enable/disable switch with matched gate thresholds ensuring monotonic ramp-up across rails. Use Value: Prevents back-powering and latch-up between subsystems due to controlled turn-on timing within ±50 ns skew. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-13 | Higher RDS(ON): 22 Ω (N), 18 Ω (P); larger SOT-26 package; no AEC-Q101 rating | Limited to industrial/commercial use; unsuitable for automotive under-hood deployment | Select when cost priority outweighs thermal performance and automotive compliance |
| NTJD4152PZ-1 | Lower VDSS: −20 V (P), 20 V (N); higher leakage (IDSS ≤10 µA); same SOT-363 footprint | Restricted to 5 V/3.3 V logic domains; not rated for 12 V automotive bus transients | Choose only for low-voltage portable electronics where voltage margin is non-critical |
Compared with DMC2038LSD-13 and NTJD4152PZ-1, BSS8402DWQ-13 uniquely combines AEC-Q101 qualification, 60 V/−50 V breakdown, and matched low-threshold gates-making it the sole option qualified for automotive body electronics with 12 V system compatibility and zero derating.
Availability
BSS8402DWQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, USB power delivery circuits, industrial sensor interfaces, and portable medical device power sequencing requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BSS8402DWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The BSS8402DWQ-13 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive power switches and interface circuits.
FAQ
Is BSS8402DWQ-13 pin-compatible with BSS8402DW-13?
Yes-both share identical SOT363 pinout, electrical specifications, and thermal characteristics. The "Q" suffix denotes automotive qualification (AEC-Q101, PPAP-capable, IATF 16949 manufacturing), while the base part is commercial-grade. No layout or schematic changes are required for upgrade.
What is the maximum continuous drain current for each channel at +85°C ambient?
At TA = +85°C, derated current is 73 mA for the N-channel (per ID @ +100°C spec) and −100 mA for the P-channel (extrapolated from −130 mA @ +25°C and RDS(ON) temperature coefficient). Derating follows the 200 mW power limit and 625 °C/W thermal resistance.
Can BSS8402DWQ-13 be used in common-source amplifier configurations?
No-it is optimized for switching, not linear amplification. Its VGS(TH) tolerance (±0.75 V), lack of guaranteed gFS min/max over temperature, and absence of SOA curves preclude reliable Class-A or AB biasing. Use dedicated small-signal MOSFETs like DMN2004K for amplification.
Does the internal schematic show shared or isolated drains?
The internal schematic (page 1, DS30380 Rev. 23) shows independent drain terminals (D1 and D2) with no internal connection. Pins 3 and 4 are electrically isolated, enabling true complementary switching in high-side/low-side or H-bridge topologies without cross-conduction risk.
BSS8402DWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V, 50V
- Current - Continuous Drain (Id) @ 25°C:
- 115mA (Ta), 130mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA, 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 25V, 45pF @ 25V
- Power - Max:
- 200mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
BSS8402DWQ-13 FAQ
1.How can I place an order for BSS8402DWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS8402DWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS8402DWQ-13 reliable?
The price and inventory of BSS8402DWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS8402DWQ-13 is usually 5 days.
3.What payment methods are accepted for BSS8402DWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS8402DWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSS8402DWQ-13?
BSS8402DWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS8402DWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS8402DWQ-13?
For technical support, including BSS8402DWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS8402DWQ-13 requirements.
6.How does Aetrix verify that BSS8402DWQ-13 is sourced from the original manufacturer or authorized distributors?
All BSS8402DWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS8402DWQ-13 meets industry standards.
7.What is the process for return or replacement of BSS8402DWQ-13?
All BSS8402DWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with BSS8402DWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS8402DWQ-13 part is unused and in its original packaging.
Return procedure for BSS8402DWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSS8402DWQ-13 Tags
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