Nexperia USA Inc. BSS84AK-BR

Overview

BSS84AK-BR from Nexperia is a P-channel enhancement-mode Trench MOSFET in SOT23 (TO-236AB) package, rated for −50 V drain-source voltage, −180 mA continuous drain current at 25 °C, and 4.5 Ω typical R_DS(on) at V_GS = −10 V. It serves as a high-side load switch or relay driver in space-constrained automotive and industrial control circuits.

For engineers reviewing the BSS84AK-BR datasheet, BSS84AK-BR pinout, BSS84AK-BR application, or BSS84AK-BR equivalent, this device offers AEC-Q101 qualification, logic-level gate drive compatibility (V_GS(th) = −1.1 to −2.1 V), fast switching (t_d(on) = 13–26 ns), ESD robustness (1 kV HBM), and thermal performance validated on FR4 PCB with 1 cm² drain pad.

Technical Context

This P-channel MOSFET uses Trench MOSFET technology to achieve low on-resistance and fast switching while maintaining stable threshold voltage across temperature (−1.6 V typ. at 25 °C, decreasing to −1.0 V at 150 °C). Its gate charge profile (Q_G(tot) = 0.26–0.35 nC) supports efficient driving from microcontroller GPIOs without external buffers.

The device operates with a source-drain diode forward voltage of −0.48 to −1.2 V at −115 mA, enabling bidirectional blocking in high-side configurations. Its safe operating area (SOA) is defined up to −0.7 A peak drain current (10 µs pulse) and −50 V V_DS, with derating governed by R_th(j-a) = 260–300 K/W under standard FR4 mounting.

Key Specifications

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package with 3 leads; compact footprint (2.9 × 1.3 × 1.0 mm) optimized for automated assembly and thermal relief via exposed drain pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with DMN2004LK-7 and SI2301DS-T1-BE3, the BSS84AK-BR uniquely balances AEC-Q101 compliance, logic-level drive, and 1 kV ESD in the smallest SOT23 footprint-making it optimal for space- and reliability-critical automotive signal switching.

Availability

BSS84AK-BR is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and portable equipment requiring stable component supply with guaranteed long-term continuity.

Supply support for BSS84AK-BR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade MOSFETs and ESD-protected components.

The BSS84AK-BR belongs to Nexperia's AEC-Q101-qualified small-signal Trench MOSFET product line, engineered specifically for reliable high-side switching in automotive infotainment, lighting, and power management systems.

FAQ

Is BSS84AK-BR suitable for 1.8 V logic-level drive?

No. While its V_GS(th) range (−1.1 to −2.1 V) allows turn-on with 1.8 V drive in some cases, guaranteed R_DS(on) performance requires V_GS ≤ −4.5 V. For reliable 1.8 V operation, a gate driver or level shifter is recommended to ensure sufficient overdrive margin and thermal stability.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 150 °C, but continuous operation above 125 °C requires derating per Figure 2 in the datasheet. At T_j = 125 °C, the continuous drain current drops to −120 mA due to R_DS(on) increase and thermal resistance limits-designers must verify PCB copper area and ambient conditions accordingly.

Does BSS84AK-BR include an integrated body diode?

Yes. It features an inherent source-drain diode with V_SD = −0.48 to −1.2 V at −115 mA and 25 °C. This diode conducts when V_S > V_D, enabling freewheeling in inductive loads-but it is not rated for reverse recovery in high-frequency switching and must be considered in layout grounding.

How does the SOT23 package affect thermal performance in high-duty-cycle applications?

With R_th(j-a) = 260–300 K/W on FR4 (1 cm² drain pad), the SOT23 limits continuous power dissipation to ~350 mW at 25 °C ambient. For >10% duty cycle, thermal simulation or IR measurement is required-adding thermal vias under the drain pad or using thicker copper improves R_th(j-a) by up to 30%.