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Nexperia USA Inc. BSS84AKS,115
- Part No.:
- BSS84AKS,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BSS84AKS,115.pdf
- Description:
- MOSFET 2P-CH 50V 0.16A 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:29,473
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Product details
Overview
BSS84AKS from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in SOT363 (SC-88) package, rated for −50 V drain-source voltage, −160 mA continuous drain current per channel, and 4.5 Ω typical RDS(on) at VGS = −10 V and Tj = 25 °C. It serves as a high-speed, logic-level-compatible high-side load switch or relay driver in compact automotive and industrial control modules.
For engineers reviewing the BSS84AKS datasheet, BSS84AKS pinout, BSS84AKS application, or BSS84AKS equivalent, this device supports AEC-Q101-qualified dual-channel switching with fast turn-on/turn-off timing (td(on) = 13 ns typ., tf = 25 ns typ.), ESD protection up to 1 kV HBM, and thermal resistance of 340–390 K/W (per transistor, FR4 PCB with 1 cm² drain pad).
Technical Context
This dual P-channel MOSFET uses Trench technology to achieve low RDS(on) and fast switching while maintaining logic-level gate drive compatibility (VGS(th) = −1.1 to −2.1 V). Each channel operates independently with isolated source, gate, and drain terminals-no internal connection between transistors.
It features integrated source-drain diode (VSD = −0.48 to −1.2 V at IS = −115 mA), reverse transfer capacitance (Crss = 1.3 pF typ.), and gate charge parameters (QG(tot) = 0.26 nC typ.) optimized for high-frequency line driving and pulse-width modulated load control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −50 V maximum - supports 24 V automotive rail switching with 100 % margin against transients. |
| ID (continuous) | −160 mA per transistor at Tamb = 25 °C - suitable for driving small relays or LED strings without heatsinking. |
| RDS(on) | 4.5 Ω typical at VGS = −10 V, ID = −100 mA - enables <100 mW conduction loss at rated current. |
| td(on)/tf | 13 ns / 25 ns typical - allows >10 MHz switching in digital load-switching applications. |
| ESD rating | 1000 V HBM - eliminates need for external ESD protection in board-level I/O interface designs. |
| AEC-Q101 qualified | Qualified for automotive grade 1 (−40 to +125 °C ambient) - validated for under-hood and infotainment power control. |
| Ciss | 24 pF typical - ensures minimal gate drive power and stable operation with standard microcontroller GPIOs. |
Pinout & Package
Package: SOT363 (SC-88 / TSSOP6), plastic surface-mounted, 6-lead, 1.35 mm × 1.8 mm footprint, 0.65 mm pitch, 1.15 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of transistor 1 - connects to system ground or low-side return path for independent channel control. |
| 2 | G1 | Gate terminal of transistor 1 - driven directly by 3.3 V or 5 V logic with no level-shifting required. |
| 3 | D2 | Drain terminal of transistor 2 - routed to high-voltage load (e.g., relay coil anode) for high-side switching. |
| 4 | S2 | Source terminal of transistor 2 - electrically isolated from S1; ties to separate reference or floating node. |
| 5 | G2 | Gate terminal of transistor 2 - enables synchronous or independent dual-channel control from separate MCU pins. |
| 6 | D1 | Drain terminal of transistor 1 - used for second independent load path, e.g., status indicator or auxiliary sensor bias. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) range (−1.1 to −2.1 V) ensures full enhancement with 3.3 V microcontrollers - no external level shifter needed. |
| Trench MOSFET architecture | Delivers 4.5 Ω RDS(on) at −100 mA while minimizing gate charge (QG(tot) = 0.26 nC) for efficient high-frequency operation. |
| High-speed switching | 13 ns turn-on delay and 25 ns fall time enable clean edge transitions in 10+ MHz digital load control circuits. |
| AEC-Q101 qualification | Validated for automotive temperature cycling, humidity, and mechanical shock - suitable for body electronics and ADAS subsystems. |
| Integrated ESD protection | 1 kV HBM rating on all pins reduces board-level ESD design overhead and improves field reliability in industrial I/O modules. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving 12 V/24 V electromagnetic relays in automotive body control modules. IC Role / Device Role / Timing Role: Dual high-side switch controlling relay coil anodes; one channel manages main relay, the other handles diagnostic feedback path. Use Value: −50 V VDS rating withstands load-dump transients; fast switching (tf = 25 ns) prevents contact arcing during PWM-controlled de-energization. |
Use Scenario: Transmitting differential logic signals across short PCB traces in industrial PLC backplanes. IC Role / Device Role / Timing Role: Active termination and signal inversion stage using complementary P-channel pair configuration. Use Value: Low Ciss (24 pF) and fast tr/tf minimize signal distortion; independent gate control enables precise timing skew adjustment. |
| High-Side Load Switch | Switching Circuits |
Use Scenario: Power gating of 3.3 V sensor sub-circuits in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Dual-channel power switch enabling selective wake-up of analog front-end and digital interface blocks. Use Value: −160 mA per channel supports typical sensor loads; low RDS(on) limits dropout to <700 mV at full current - preserves supply headroom. |
Use Scenario: Implementing bidirectional current steering in analog multiplexer or test equipment signal routing. IC Role / Device Role / Timing Role: Two independent P-MOSFETs configured as transmission gates with isolated sources for true bidirectional conduction. Use Value: Independent S1/S2 terminals allow floating-source topology; VSD = −0.48 V enables low-loss reverse conduction when used as active diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMG1012T | Single-channel, SOT-523, −20 V VDS, −500 mA ID, 0.35 Ω RDS(on) - higher current but lower voltage rating and no dual configuration. | Not pin-compatible; requires two devices and extra PCB area to replicate dual functionality. | Select only if single-channel high-current switching dominates over space-constrained dual-channel needs. |
| FDMA1023PZ | Dual P-channel in WDFN-6, −20 V VDS, −1.5 A ID, 0.11 Ω RDS(on) - higher performance but incompatible package and non-AEC-Q101 rated. | Lacks automotive qualification and has different thermal profile - unsuitable for under-hood deployment. | Prefer for high-power consumer-grade DC-DC sequencing where AEC-Q101 and compact size are secondary. |
Compared with DMG1012T and FDMA1023PZ, BSS84AKS uniquely delivers AEC-Q101 qualification, −50 V capability, and true dual-channel isolation in a 1.35 mm × 1.8 mm footprint - making it the only option for space-limited, automotive-grade dual high-side switching.
Availability
BSS84AKS is available at Aetrix Electronics and suitable for automotive body control units, industrial I/O modules, and battery-powered sensor hubs requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for BSS84AKS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD-protected interfaces.
BSS84AKS belongs to Nexperia's TrenchMOS portfolio designed specifically for space-constrained, high-reliability switching in automotive and industrial environments - emphasizing logic-level drive, fast timing, and robust transient handling.
FAQ
Is BSS84AKS suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage range of −1.1 V to −2.1 V and guaranteed enhancement at VGS = −3.3 V, BSS84AKS fully turns on using standard 3.3 V GPIO outputs. Its low gate charge (0.26 nC typ.) further ensures minimal drive current demand and fast switching without external buffers.
What is the maximum junction temperature and how does it affect RDS(on)?
The absolute maximum junction temperature is 150 °C. At this temperature, RDS(on) increases to 13.5 Ω (max) - more than double its 25 °C value of 4.5 Ω (typ.). Derating curves in Figure 8 show RDS(on) rises linearly with Tj; operation above 125 °C requires thermal design validation using the 340–390 K/W Rth(j-a) values.
Can the two channels be paralleled to increase current capacity?
No. The channels are electrically isolated with separate source, gate, and drain terminals - no internal connection exists between them. Paralleling would require matched external gate resistors and careful layout to avoid current imbalance; the datasheet does not characterize or recommend this configuration.
Does BSS84AKS include body diode conduction capability?
Yes. Each channel includes an intrinsic source-drain diode with forward voltage VSD = −0.48 V to −1.2 V at −115 mA. This enables use in reverse-polarity protection or active rectification, though the diode is not rated for continuous reverse recovery - it is intended for low-duty-cycle freewheeling only.
BSS84AKS,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 160mA
- Rds On (Max) @ Id, Vgs:
- 7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 36pF @ 25V
- Power - Max:
- 445mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BSS84AKS,115 FAQ
1.How can I place an order for BSS84AKS,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS84AKS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS84AKS,115 reliable?
The price and inventory of BSS84AKS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS84AKS,115 is usually 5 days.
3.What payment methods are accepted for BSS84AKS,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS84AKS,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSS84AKS,115?
BSS84AKS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS84AKS,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS84AKS,115?
For technical support, including BSS84AKS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS84AKS,115 requirements.
6.How does Aetrix verify that BSS84AKS,115 is sourced from the original manufacturer or authorized distributors?
All BSS84AKS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS84AKS,115 meets industry standards.
7.What is the process for return or replacement of BSS84AKS,115?
All BSS84AKS,115 units undergo pre-shipment inspection (PSI). If there is an issue with BSS84AKS,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS84AKS,115 part is unused and in its original packaging.
Return procedure for BSS84AKS,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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