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NXP Semiconductors BSS84AKT,115
- Part No.:
- BSS84AKT,115
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- SC-75, SOT-416
- Datasheet:
-
BSS84AKT,115.pdf
- Description:
- MOSFET P-CH 50V 150MA SC75
- Quantity:
- Payment:
- Shipping:
Inventory:4,267
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Product details
Overview
BSS84AKT from NXP Semiconductors is a P-channel enhancement-mode Trench MOSFET in SOT416 (SC-75) package, rated for -50 V drain-source voltage, -150 mA continuous drain current at 25 °C, and 4.5 Ω typical RDS(on) at VGS = -10 V. It serves as a high-side load switch or relay driver in compact automotive and industrial control circuits.
For engineers reviewing the BSS84AKT datasheet, BSS84AKT pinout, BSS84AKT application, or BSS84AKT equivalent, key selection criteria include logic-level gate drive compatibility (-1.6 V typical VGS(th)), AEC-Q101 qualification, fast switching (13 ns td(on), 25 ns tf), and ESD robustness (1 kV HBM).
Technical Context
This device uses Trench MOSFET technology to achieve low on-resistance and fast switching with minimal gate charge (0.26 nC typical QG(tot)). Its P-channel architecture enables high-side switching without level-shifting circuitry.
The BSS84AKT features a single-gate structure with integrated source-drain diode (VSD = -0.85 V typ at -115 mA), operates over -55 °C to +150 °C junction temperature range, and meets AEC-Q101 stress test requirements for automotive discrete semiconductors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -50 V maximum - supports 36 V automotive systems with margin against transients |
| ID | -150 mA continuous at 25 °C - suitable for low-power signal and bias switching |
| RDS(on) | 4.5 Ω typical at VGS = -10 V - ensures <150 mW conduction loss at rated current |
| VGS(th) | -1.6 V typical - fully enhanced by 3.3 V logic, enabling direct microcontroller drive |
| QG(tot) | 0.26 nC typical - enables nanosecond-scale switching with low gate-drive power |
| tf | 25 ns typical - reduces switching losses in high-frequency PWM applications |
| ESD Rating | 1000 V HBM - protects against handling damage without external clamping |
Pinout & Package
SOT416 (SC-75) plastic surface-mounted package: 1.7 mm × 1.4 mm footprint, 0.9 mm height, single-sided copper FR4 mounting pad (1 cm² for drain), optimized for reflow soldering per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level input; requires ≤10 µA leakage current (IGSS) |
| 2 (S) | Source | Reference node for gate drive; connects to system supply in high-side configuration |
| 3 (D) | Drain | Switched output terminal; thermally coupled to PCB pad for 360 K/W Rth(j-a) |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level compatible | VGS(th) = -1.6 V typ enables direct drive from 3.3 V/5 V MCUs without gate driver |
| Very fast switching | 13 ns td(on) and 25 ns tf minimize transition losses in >1 MHz switching |
| Trench MOSFET technology | Reduces RDS(on) by 30% vs planar equivalents at same die size and voltage rating |
| ESD protection | 1 kV HBM rating eliminates need for external ESD diodes in board-level design |
| AEC-Q101 qualified | Validated for automotive underhood environments including temperature cycling and humidity testing |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving coil of 12 V automotive relay with MCU GPIO. IC Role / Device Role / Timing Role: High-side switch controlling relay coil current path. Use Value: -150 mA rating handles typical 80–120 mA relay coils; logic-level VGS(th) avoids level shifter; 1 kV ESD prevents latch-up during hot-plug events. |
Use Scenario: Transmitting TTL/CMOS signals across noisy industrial backplanes. IC Role / Device Role / Timing Role: Active pull-up/pull-down buffer with controlled edge rate. Use Value: 25 ns fall time ensures clean 10–20 MHz digital signaling; low Ciss (24 pF typ) minimizes capacitive loading on source. |
| High-Side Load Switch | Switching Circuits |
Use Scenario: Powering sensor modules in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Controlled power rail enable switch with reverse polarity protection. Use Value: P-channel topology provides inherent reverse-voltage blocking; RDS(on) < 7.5 Ω limits dropout to <1.1 V at 150 mA; -55 °C to +150 °C operation supports extended environmental ranges. |
Use Scenario: Enabling/disabling bias networks in RF front-end modules. IC Role / Device Role / Timing Role: Low-leakage DC path controller in signal chain power management. Use Value: IDSS < 1 µA at -50 V ensures <100 nA standby current; fast turn-off (96 ns td(off)) isolates sensitive analog sections during sleep mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053UVT-7 | Lower RDS(on) (2.8 Ω @ -4.5 V), but higher QG (0.9 nC); SOT-523 package (smaller, 1.2 mm × 0.8 mm) | Preferred where lower conduction loss dominates over switching speed; unsuitable for space-constrained layouts requiring SOT416 footprint | Select DMN2053UVT-7 only if thermal budget allows smaller pad area and gate drive can support higher QG. |
| SI2301DS-T1-BE3 | Higher ID rating (-2.4 A), but higher VGS(th) (-1.8 V min) and larger SOT-23 package; not AEC-Q101 qualified | Used in non-automotive consumer power switches; lacks automotive reliability validation and ESD margin | Choose SI2301DS-T1-BE3 only for cost-sensitive non-automotive designs requiring higher current capability. |
Compared with DMN2053UVT-7 and SI2301DS-T1-BE3, the BSS84AKT delivers optimal balance of logic-level drive, AEC-Q101 compliance, and SOT416 footprint-making it the preferred choice for space-limited automotive signal switching where reliability and ESD robustness are critical.
Availability
BSS84AKT is available at Aetrix Electronics and suitable for automotive relay drivers, high-speed line drivers, high-side loadswitches, and switching circuits requiring stable component supply across production lifecycles.
Supply support for BSS84AKT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The BSS84AKT belongs to NXP's TrenchMOS family, engineered specifically for high-reliability, low-power switching in automotive signal-path and power-management applications.
FAQ
What is the maximum drain-source voltage rating for the BSS84AKT?
The BSS84AKT has a maximum drain-source voltage (VDS) rating of -50 V, specified at Tj = 25 °C. This rating ensures safe operation in 36 V automotive systems with transient overvoltage margin, and must not be exceeded under any operating condition to prevent permanent device failure.
Is the BSS84AKT suitable for direct drive from a 3.3 V microcontroller?
Yes, the BSS84AKT is logic-level compatible with a typical gate-source threshold voltage (VGS(th)) of -1.6 V and guaranteed turn-on at -1.1 V. At VGS = -3.3 V, it achieves full enhancement with RDS(on) ≤ 7.5 Ω, making it suitable for direct drive from standard 3.3 V GPIO without external level-shifting circuitry.
Does the BSS84AKT have built-in ESD protection?
Yes, the BSS84AKT includes on-chip ESD protection rated to 1000 V per the Human Body Model (HBM), as confirmed in the datasheet limiting values table. This eliminates the need for external ESD suppression components in most board-level implementations.
What is the thermal resistance from junction to ambient for the BSS84AKT on a standard FR4 PCB?
When mounted on an FR4 PCB with single-sided copper and standard footprint, the BSS84AKT exhibits a typical thermal resistance from junction to ambient (Rth(j-a)) of 440 K/W. With a 1 cm² drain pad, this improves to 360 K/W, enabling 250 mW total power dissipation at 25 °C ambient.
Is the BSS84AKT qualified for automotive applications?
Yes, the BSS84AKT is AEC-Q101 qualified, having passed all stress tests defined by the Automotive Electronics Council for discrete semiconductors. This qualification confirms its suitability for use in automotive under-hood and cabin applications requiring extended temperature operation and long-term reliability.
BSS84AKT,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 150mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.35 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 36 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250mW (Ta), 770mW (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
BSS84AKT,115 FAQ
1.How can I place an order for BSS84AKT,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS84AKT,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS84AKT,115 reliable?
The price and inventory of BSS84AKT,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS84AKT,115 is usually 5 days.
3.What payment methods are accepted for BSS84AKT,115?
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BSS84AKT,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS84AKT,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS84AKT,115?
For technical support, including BSS84AKT,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS84AKT,115 requirements.
6.How does Aetrix verify that BSS84AKT,115 is sourced from the original manufacturer or authorized distributors?
All BSS84AKT,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS84AKT,115 meets industry standards.
7.What is the process for return or replacement of BSS84AKT,115?
All BSS84AKT,115 units undergo pre-shipment inspection (PSI). If there is an issue with BSS84AKT,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS84AKT,115 part is unused and in its original packaging.
Return procedure for BSS84AKT,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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