Nexperia USA Inc. BSS84AKV,115

Overview

BSS84AKV,115 from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in SOT666 package, rated for −50 V drain-source voltage and −170 mA continuous drain current per channel at 25 °C. It delivers logic-level gate drive compatibility (V_GS(th) = −1.1 to −2.1 V), low R_DS(on) of 4.5 Ω (typ.) at V_GS = −10 V, and fast switching with t_d(on) = 13–26 ns and t_f = 25 ns - enabling high-side loadswitching and relay driving in space-constrained portable electronics.

For engineers reviewing the BSS84AKV,115 datasheet, BSS84AKV,115 pinout, BSS84AKV,115 application, or BSS84AKV,115 equivalent, key selection criteria include dual-channel P-channel topology, ultra-small SOT666 footprint (1.6 × 1.2 × 0.55 mm), thermal resistance R_th(j-a) = 330 K/W (per transistor, FR4 PCB), ESD rating of 1 kV HBM, and verified performance across −55 °C to +150 °C junction temperature range.

Technical Context

This dual discrete MOSFET integrates two independent P-channel Trench devices sharing no internal connection - each with isolated source, gate, and drain terminals. Its trench architecture enables lower R_DS(on) and higher transconductance (g_fs = 150 mS typ.) versus planar alternatives while maintaining tight V_GS(th) distribution (−1.6 V typ.) for predictable turn-on behavior under logic-level control.

The device operates as a normally-off switch requiring negative gate bias relative to source. With Q_G(tot) = 0.26–0.35 nC and C_iss = 24–36 pF, it supports high-frequency switching up to several MHz in low-power DC-DC and signal routing applications, while its integrated source-drain diode (V_SD = −0.48 to −1.2 V at −115 mA) provides controlled reverse conduction capability.

Key Specifications

Pinout & Package

Package: SOT666 - ultra-compact surface-mount plastic package (1.6 mm × 1.2 mm × 0.55 mm body height), 6-lead, 0.5 mm pitch, designed for high-density PCB layouts and reflow soldering per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with DMG1012T and FDMA1023PZ, BSS84AKV,115 uniquely balances ultra-compact size, dual-channel independence, and logic-level compatibility - making it optimal for space-limited, low-power, multi-rail switching where thermal loads remain below 330 mW per channel.

Availability

BSS84AKV,115 is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, high-side loadswitches, and compact switching circuits requiring stable component supply and long-term production continuity.

Supply support for BSS84AKV,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient logic, analog, and MOSFET solutions - spun off from Philips in 2017 and headquartered in Nijmegen, Netherlands.

The BSS84AKV belongs to Nexperia's TrenchMOS family, engineered specifically for space-constrained, low-voltage switching applications in portable electronics, wearables, and industrial control where miniaturization and logic-level drive are critical.

FAQ

What is the maximum continuous drain current per channel at 100 °C ambient?

The BSS84AKV,115 supports −110 mA continuous drain current per channel at T_amb = 100 °C, as specified in Table 5 (Limiting Values). This derating reflects thermal constraints of the SOT666 package on standard FR4 PCB; actual current may increase with enhanced copper pour or forced airflow.

Can BSS84AKV,115 be used in linear (analog) mode operation?

No - the BSS84AKV,115 is characterized and qualified only for switching operation. Its Safe Operating Area (SOA) curve (Fig. 3) shows limited linear region capability, and R_DS(on) variation with temperature (Fig. 11) makes precision analog use impractical. It is not recommended for constant-current or amplifier applications.

Is the SOT666 package lead-free and RoHS-compliant?

Yes - the BSS84AKV,115 uses lead-free terminations and complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The package material meets JEDEC J-STD-020 moisture sensitivity level MSL3, and reflow profile follows IPC/JEDEC J-STD-020D.2.

Does the device include back-to-back body diodes between channels?

No - the BSS84AKV,115 contains two fully isolated P-channel MOSFETs with no internal connection between channels. Each has its own intrinsic source-drain diode (V_SD = −0.48 to −1.2 V), oriented anode-to-source, cathode-to-drain - enabling independent reverse conduction per channel but no cross-channel diode coupling.