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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated BSS84Q-7-F

Name: BSS84Q-7-F
Brand: Diodes Incorporated
SKU: BSS84Q-7-F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS84Q-7-F

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS84Q-7-F.pdf

Description:: BSS FAMILY SOT23 T&R 3K

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS84Q-7-F from Diodes Incorporated is a P-channel enhancement-mode MOSFET in SOT23 package, rated for -50V V_DSS, 10Ω R_DS(ON) at V_GS = -5V, and -130mA continuous drain current. It delivers low gate threshold voltage (-0.8 to -2.0V), fast switching speed, and low input capacitance (C_iss = 24.6–45pF), enabling efficient power management in space-constrained analog and digital interface circuits.

For engineers reviewing the BSS84Q-7-F datasheet, BSS84Q-7-F pinout, BSS84Q-7-F application, or BSS84Q-7-F equivalent, key selection criteria include verified R_DS(ON) at low V_GS, thermal resistance (R_θJA = 417°C/W), leakage performance (I_DSS ≤ -2µA at +125°C), and JEDEC-qualified reliability for industrial and automotive-adjacent designs.

Technical Context

This MOSFET operates as a single-polarity load switch with depletion-free channel turn-on controlled by negative gate-source bias. Its gate threshold voltage range (-0.8 to -2.0V) ensures reliable activation from low-voltage logic rails (e.g., 3.3V or 5V microcontrollers driving inverted gate signals), while its low C_iss and C_rss support sub-20ns turn-on/turn-off delays under 50Ω drive conditions.

The device uses planar silicon process technology optimized for high R_DS(ON)/area ratio and stable parametric drift over temperature. Junction-to-ambient thermal resistance (417°C/W) reflects standard FR-4 PCB mounting per Diodes' recommended pad layout, and its -55°C to +150°C operating range supports extended-temperature industrial deployments without derating below 100% ID at +125°C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-50V - Maximum blocking voltage before avalanche conduction; suitable for 36V nominal bus systems with margin.
R_DS(ON)	3.2–10Ω @ V_GS = -5V - Confirmed on-resistance range determines I²R losses in low-current switching paths (e.g., <130mA loads).
I_D (cont.)	-130mA - Continuous DC current rating at T_A = +25°C; derates to ~65mA at +85°C per Fig. 1.
C_iss	24.6–45pF @ V_DS = -25V - Input capacitance directly impacts gate drive energy and switching transition time.
V_GS(TH)	-0.8 to -2.0V - Gate threshold span defines minimum logic-high level needed for full enhancement mode operation.
P_D	300mW - Total power dissipation limit at T_A = +25°C; sets maximum steady-state loss budget for thermal design.
R_θJA	417°C/W - Thermal resistance from junction to ambient on standard FR-4 board; used to calculate ΔT_J = P_D × R_θJA.

Pinout & Package

Package: SOT23 (Standard), 3-terminal surface-mount plastic package with matte tin finish, UL 94V-0 rated material, and moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to higher potential rail; referenced for V_GS control; carries full load current.
2 (Gate)	Control electrode for channel formation	High-impedance input requiring minimal drive current; sensitive to ESD; must be actively pulled low to turn on.
3 (Drain)	Load-side current output terminal	Connected to switched load; reverse-biased during off-state; sustains full V_DSS when open.

Key Features

Feature	Design Value
Low R_DS(ON) at low V_GS	3.2Ω typical at V_GS = -5V enables efficient switching from 5V logic without level-shifting circuitry.
Low gate threshold voltage	V_GS(TH) down to -0.8V allows reliable turn-on from 3.3V CMOS outputs with sufficient noise margin.
Low input capacitance	C_iss = 24.6pF typical reduces gate charge (Q_g = 0.28nC @ V_GS = -4.5V), minimizing driver power and propagation delay.
JEDEC-qualified reliability	Qualified per AEC-Q standards for high-reliability applications, including extended temperature cycling and HTRB stress testing.

Applications

Power-Supply Load Switching

Analog Signal Routing

Use Scenario: Enabling/disabling 3.3V or 5V subsystems (e.g., sensors, RF modules) under MCU control to reduce standby power.

IC Role / Device Role / Timing Role: High-side load switch controlling power delivery path; driven by active-low GPIO with pull-up resistor.

Use Value: R_DS(ON) ≤ 10Ω limits voltage drop to <1.3mV at 130mA, preserving rail integrity and simplifying sequencing.

Use Scenario: Multiplexing audio or sensor signals between multiple sources and a shared ADC input.

IC Role / Device Role / Timing Role: Bidirectional analog switch operating in linear region; gate biased near mid-rail for low distortion.

Use Value: Low C_iss/C_oss ratio (≈5:1) minimizes feedthrough and crosstalk in signal-path switching.

Logic-Level Interface Translation

Reverse-Polarity Protection

Use Scenario: Converting open-drain or push-pull logic outputs into compatible voltage levels for legacy 5V peripherals.

IC Role / Device Role / Timing Role: Level-shifting switch with source-follower configuration; gate driven by 3.3V logic, source tied to 5V rail.

Use Value: V_GS(TH) ≤ -2.0V ensures full enhancement even with 1.7V gate overdrive, guaranteeing low R_DS(ON).

Use Scenario: Preventing damage from accidental battery reversal in portable instrumentation or IoT edge nodes.

IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive supply rail; body diode blocks reverse current when V_IN is inverted.

Use Value: -50V V_DSS withstands >40V reverse transients; low R_DS(ON) adds <1.3Ω series impedance in forward conduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305U-7	R_DS(ON) = 45mΩ @ V_GS = -4.5V; higher current rating (−4.2A); larger SOT-23 footprint with different pinout (G-D-S vs. S-G-D)	Designed for high-current DC-DC converter synchronous rectification, not low-power signal switching	Select only if ≥4A load current and board layout accommodates alternate pin assignment and thermal mass.
SI2301DS-T1-E3	R_DS(ON) = 115mΩ @ V_GS = -2.5V; lower V_GS(TH) (-0.4 to -1.2V); same SOT-23 package and pinout (S-G-D)	Optimized for ultra-low-voltage gate drive (e.g., 1.8V logic), but higher on-resistance increases conduction loss at 130mA	Prefer when interfacing with sub-2.5V controllers; avoid where <100mΩ R_DS(ON) is required at 130mA.

Compared with DMG2305U-7 and SI2301DS-T1-E3, BSS84Q-7-F offers the best balance of low gate-drive voltage compatibility, moderate R_DS(ON), and strict pinout consistency for legacy SOT-23 footprint reuse in low-current (<200mA) industrial control and sensor interface designs.

Availability

BSS84Q-7-F is available at Aetrix Electronics and suitable for power-supply load switching, analog signal routing, logic-level interface translation, and reverse-polarity protection requiring stable component supply across industrial automation, test equipment, and connected sensor node production.

Supply support for BSS84Q-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and ICs, specializing in high-performance, high-reliability components for power management, signal integrity, and protection applications.

The BSS84Q-7-F belongs to Diodes' general-purpose small-signal MOSFET product line, engineered for robustness in industrial and automotive-adjacent applications where low gate-threshold operation, JEDEC qualification, and compact SOT23 packaging are critical.

FAQ

What is the maximum continuous drain current for BSS84Q-7-F at +85°C ambient?

At +85°C ambient temperature, the maximum continuous drain current is approximately 95mA. This value is derived from the derating curve in Figure 1 of the datasheet, where power dissipation drops from 300mW at +25°C to ~215mW at +85°C, and applying P = I²R with R_DS(ON) = 10Ω yields I ≈ √(0.215/10) ≈ 0.147A - but the absolute maximum ID rating remains -130mA, and thermal limits govern practical use. The device is rated for -130mA only at T_A = +25°C.

Is BSS84Q-7-F pin-compatible with the standard BSS84-7-F?

Yes, BSS84Q-7-F is pin-compatible with BSS84-7-F. Both share identical SOT23 package dimensions, terminal assignments (Source–Gate–Drain on pins 1–2–3), and mechanical specifications per Diodes' package outline documentation. The "Q" suffix denotes automotive-compliant qualification per AEC-Q standards, while electrical parameters and pinout remain unchanged.

Does BSS84Q-7-F require a gate resistor for safe switching?

A gate resistor is recommended to dampen ringing and limit peak gate current during fast transitions. With Q_g = 0.28nC and typical MCU GPIO rise/fall times <10ns, peak current can exceed 28mA - exceeding some GPIO drive specs. A 10–100Ω series resistor suppresses oscillation without significantly increasing t_D(ON)/t_D(OFF), as confirmed by the 50Ω test condition in the datasheet's dynamic characteristics table.

Can BSS84Q-7-F be used in linear (ohmic) mode for analog switching?

Yes, BSS84Q-7-F is suitable for linear-mode analog switching when V_DS is kept below |V_GS − V_GS(TH)| to maintain triode-region operation. Its low R_DS(ON) variation over V_GS (Fig. 4) and low C_oss/C_rss ratio ensure minimal signal distortion and crosstalk, provided gate drive remains within ±20V and power dissipation stays within 300mW limits.

BSS84Q-7-F Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 130mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V

Rds On (Max) @ Id, Vgs:: 10Ohm @ 100mA, 5V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 0.59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 45 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

BSS84Q-7-F FAQ

1.How can I place an order for BSS84Q-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS84Q-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS84Q-7-F reliable?

The price and inventory of BSS84Q-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS84Q-7-F is usually 5 days.

3.What payment methods are accepted for BSS84Q-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS84Q-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS84Q-7-F?

BSS84Q-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS84Q-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS84Q-7-F?

For technical support, including BSS84Q-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS84Q-7-F requirements.

6.How does Aetrix verify that BSS84Q-7-F is sourced from the original manufacturer or authorized distributors?

All BSS84Q-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS84Q-7-F meets industry standards.

7.What is the process for return or replacement of BSS84Q-7-F?

All BSS84Q-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BSS84Q-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS84Q-7-F part is unused and in its original packaging.

Return procedure for BSS84Q-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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